Composite dielectric material, composite dielectric substrate, prepreg, coated metal foil, molded sheet, composite magnetic substrate, substrate, double side metal foil-clad substrate, flame retardant substrate, polyvinylbenzyl ether resin composition, thermosetting polyvinylbenzyl ether resin composition, and method for preparing thermosetting polyvinylbenzyl ether resin composition

ABSTRACT

A composite dielectric material comprising a resin resulting from a polyvinylbenzyl ether compound and a dielectric, ceramic powder dispersed therein is useful in the high-frequency region. A composite magnetic material comprising a polyvinylbenzyl ether compound and a magnetic powder is also provided as well as a flame retardant material comprising a polyvinylbenzyl ether compound and a flame retardant. These materials may be used in the fabrication of substrates, prepreg sheets, coated metal foils, molded items, and metal foil-clad substrates.

This invention relates to composite dielectric materials having arelatively high Q and a relatively high dielectric constant and suitablefor use in electronic parts such as strip lines, impedance matchingcircuits, delay circuits and antennas.

BACKGROUND OF THE INVENTION

With the diversified advance of the electronic technology, there arediversified performance requirements of concern for insulating materialsintended for use in electronic devices. In particular, printed wiringboards have been used in a very wide range of application, and theperformance requirements on substrates thereof have been diversified.Under the circumstances, there are many different requirements regardingdielectric characteristics.

Low-dielectric constant printed wiring boards have been developed with afocus placed on high speed propagation, high characteristic impedance,size reduction or cross-talk reduction. On the other hand,high-dielectric constant substrates are needed to meet such demands asthe formation of delay circuits in high frequency and microwave circuitsand other wiring boards, matching of the characteristic impedance ofwiring boards in low impedance circuits, miniaturization of wiringpatterns, and fabrication of hybrid circuit devices on substrates havinga capacitive effect.

As the information communication system advances, mobile communicationand satellite communication systems such as automotive radiotelephonesand digital mobile phones now become of great interest, which use a highfrequency band of the order of megahertz to gigahertz as the frequencyband of radio wave. While communication instruments used in thesecommunication means are in rapid progress, attempts have been made forthe size reduction and high density packaging of casings and electronicparts. Similar requirements are imposed on the antennas used in thecommunication instruments. Planar antennas having micro-strip linesformed on dielectric substrates are used as high-frequency antennas.

The dielectric substrates used in these applications should have a highdielectric constant and a low loss so that the planar antennas can bereduced in size.

Electronic parts such as strip lines, impedance matching circuits, delaycircuits and antennas should have high Q values because satisfactorycharacteristics are not available with low Q values. On the other hand,in the fabrication of resonators using strip lines, a high dielectricconstant is necessary for size reduction purposes because the length ofstrip lines is in proportion to 1/{square root}∈ wherein ∈ is adielectric constant.

Capacitors having an increased capacitance are generally produced byspreading the area of opposed electrodes, increasing the number oflayers, or reducing the distance between layers. These approachesincrease the size or thickness of substrates or parts.

For such capacitors, a high dielectric constant is necessary for sizereduction purposes.

As one suitable dielectric material, JP-A 9-31006 discloses apolyvinylbenzyl ether compound of a specific structure in the curedstate. This compound fails to achieve a high dielectric constant in thehigh-frequency band. There is a need to have a material satisfying suchproperties.

In the prior art relating to such applications, high dielectric constantsubstrates are proposed which are obtained by stacking and moldingprepreg sheets which are, in turn, obtained by adding a ceramic powderhaving a high dielectric constant to an epoxy resin (for laminates orprinted circuit boards) or a polyphenylene ether resin (which is a lowdielectric constant resin), impregnating glass fabric or glass non-wovenfabric therewith, followed by drying.

However, the dielectric dissipation factor cannot be reduced merely byadding a high-frequency ceramic powder having a high dielectric constantto conventional thermosetting resins as typified by epoxy resins forprior art laminates or printed circuit boards. Where high dielectricconstant fillers are added to polyphenylene ether resins which are lowdielectric constant resins, the dielectric dissipation factor becomeslow. However, the amount of the filler added must be increased in orderto provide a high dielectric constant, which gives rise to problemsincluding difficulty to drill and machine the laminate and substantialdimensional variances.

JP-A 9-31006 discloses a resin obtained by polymerizing or curing apolyvinylbenzyl ether compound of a specific structure, the resinexhibiting dielectric characteristics which are satisfactory andconstant over a wide frequency region and least dependent on temperatureand moisture absorption as well as heat resistance. Since this resin hasa low dielectric constant and a low dissipation factor, it fails tofulfil the requirement in some applications where a high dielectricconstant is needed.

The substrates used in the fabrication of electronic parts and circuitboards include composite substrates which are obtained by mixing amolding material with ferrite powder, molding the mixture into plates,and treating the plates as by electroplating, for example, compositeferrite substrates molded from composite ferrite substrates materialscomprising a liquid crystal polymer and ferrite. Also included arecopper-clad laminates using prepreg sheets formed from ferritepowder-free, glass cloth-reinforced epoxy resins or phenolic resins.

However, in the case of the molded plates treated as by plating, it isdifficult to mold thin-wall plates of large planar dimensions. Thecopper-clad laminates which are free from ferrite powder, that is, lackmagnetic material have the problem that in forming devices, parts andcircuits utilizing magnetic characteristics, a ferrite material must beseparately applied or a ferrite member must be mounted. The copper-cladlaminates which are free from ferrite powder do not have magneticshielding effects by themselves and are not suitable in magneticshielding purposes.

JP-A 58-158813 discloses an electrical laminate comprising a baseimpregnated with a laminate-forming resin containing a metal oxidehaving both magnetic and electrically insulating properties.Illustrative examples are combinations of phenolic resin with kraftpaper, which are poor in heat resistance and strength required forthinning purposes. The content of ferrite powder is below 50 wt % of theentire composition, failing to provide satisfactory magnetic propertiesrequired as a magnetic material.

JP-A 59-176035 discloses a composite fiber material for absorbingelectromagnetic waves, comprising fiber layers disposed one on top ofthe other and joined by a matrix consisting of a resin and a curingagent wherein a filler for absorbing electromagnetic waves is containedin each layer such that its concentration is graded from the outside tothe inside. Since the filler is distributed so as to give acompositional grading, the prepreg manufacture is cumbersome.

JP-A 2-120040 discloses a copper-clad laminate for absorbingelectromagnetic waves, which is obtained by impregnating glass fiberwoven fabric with a thermosetting resin, drying to form a prepreg, andplacing copper foil on the prepreg, followed by laminating press,wherein an electromagnetic wave-absorbing material is mixed anddispersed in the thermosetting resin so that electromagnetic noise of aselected frequency is absorbed. Since PZT powder is used in illustrativeexamples, the resulting laminates are not suitable in magneticproperty-utilizing applications and magnetic shielding purposes.

JP-A 11-192620 discloses a prepreg obtained by kneading ferrite powderand an epoxy resin in a solvent to form a slurry paste, and impregnatingglass cloth with the paste, followed by drying, and a composite magneticsubstrate obtained by laminating press of the prepreg. Since the epoxyresin used as the base of the prepreg has a high dielectric constant,the resulting composite magnetic substrate naturally has a highdielectric constant and high dissipation factor. Because of a relativelyhigh percent water absorption, the substrate is likely to undergo apattern peeling phenomenon and changes of dielectric constant anddissipation factor during solder flow and dipping steps.

JP-A 10-79593 discloses a prepreg obtained by impregnating glass clothwith a magnetic paint comprising a soft magnetic powder and athermosetting resin, and a printed wiring board. Since an epoxy resinused as the base of the prepreg has a high dielectric constant, theresulting composite magnetic substrate naturally has a high dielectricconstant and high dissipation factor. Because of a relatively highpercent water absorption, the substrate is likely to undergo a patternpeeling phenomenon and changes of dielectric constant and dissipationfactor during solder flow and dipping steps.

Polyvinylbenzyl ether compounds are combustible and so, safety becomes aproblem when they are applied to multilayer substrates and electronicparts. It remains unsolved to manufacture multilayer substrates andelectronic parts that clear UL-94, V-0 rating.

JP-A 9-31006 discloses a polyvinylbenzyl ether compound and a method forpreparing the same. This polyvinylbenzyl ether compound in the curedstate has dielectric characteristics which are satisfactory and constantover a wide frequency region and least dependent on temperature andmoisture absorption, as well as good heat resistance.

It is described in JP-A 9-31006 that the polyvinylbenzyl ether compoundis prepared by reacting a polyphenol with a vinylbenzyl halide in apolar neutral solvent in the presence of an alkali metal hydroxide as adehydrochlorination agent, or in a water/organic solvent mixture in thepresence of a phase transfer catalyst (e.g., quaternary ammonium salt)and an alkali metal hydroxide as a dehydrochlorination agent at atemperature of up to 100° C. The polyvinylbenzyl ether compound thusobtained is directly polymerized or cured into a cured product. Thecured product of polyvinylbenzyl ether compound obtained by thisprocedure, however, does not have the desired dissipation factor and arenot suitable for use in the high-frequency application. The transmissionloss of a signal is represented by the product of frequency, square rootof dielectric constant, and dissipation factor, which means that a lowerdissipation factor among dielectric characteristics becomes desirable asthe frequency becomes higher.

Commonly known high-frequency electronic parts and multilayer substratesinclude those obtained by stacking multiple layers of sintered ferriteor sintered ceramics and molding them into the substrate shape. This hasbeen a common practice because the multilayer substrates resulting fromthese materials have the great advantage of size reduction.

However, since sintered ferrite material has the problem that thefrequency response of magnetic permeability μ among magneticcharacteristics merely extends up to about 500 MHz, its use in ahigh-frequency band of the order of gigahertz is limited. The materialhas a large dielectric constant and suffers from a lowering ofhigh-frequency characteristics under the influence of stray capacity.

Besides, simply using sintered ceramics encounters difficulty inachieving a dielectric constant of 4 or less. A further lowering ofdielectric constant is desired in order to enhance high-frequencycharacteristics.

For enhancing high-frequency characteristics, JP-A 9-76341, 11-192620and 8-69712 disclose substrates of composite materials comprising aceramic magnetic material such as sintered ferrite or ceramic dielectricmaterial and an organic resin material. Nevertheless, there is yetavailable no material that meets the desired high-frequencycharacteristics.

Where heterogeneous materials such as sintered ferrite and sinteredceramic are contained in a common multilayer substrate as multiplelayers, there arises the problem that cracks often occur due to thedifference of coefficient of linear expansion.

SUMMARY OF THE INVENTION

A first object of the invention is to provide a consolidated compositedielectric material which has a relatively high Q and relatively highdielectric constant, is used in an application where such properties arerequired, for example, such electronic parts as strip lines, impedancematching circuits, delay circuits, and antennas, and can be adapted soas to meet the required properties.

A second object of the invention is to provide a consolidated compositedielectric material which has a high dielectric constant, is used in anapplication where such properties are required, for example, suchelectronic parts as capacitor-built-in circuit boards, hybrid parts andcapacitors, and can be adapted so as to meet the required properties.

A third object of the invention is to provide a composite dielectricsubstrate which is suitable for use in the high-frequency region,exhibits dielectric characteristics for the intended purpose as typifiedby a high dielectric constant and a low dissipation factor in thehigh-frequency region, as well as a prepreg, coated copper foil andmolded sheet for use in preparing the composite dielectric substrate.

A fourth object of the invention is to provide (1) a composite magneticsubstrate and a prepreg having a low dielectric constant and lowdissipation factor; (2) a composite magnetic substrate and a prepreghaving high heat resistance, typically a high glass transitiontemperature and high decomposition initiation temperature; (3) acomposite magnetic substrate and a prepreg having a low water pickup anda minimized change of dielectric constant and dissipation factor; (4) acomposite magnetic substrate and a prepreg which have close adhesion toa metal foil such as copper foil and a reduced thickness, and can bemanufactured by a conventional substrate manufacturing process; (5) acomposite magnetic substrate and a prepreg having a constant dielectricconstant and dissipation factor up to a frequency band of the order ofgigahertz; and (6) a composite magnetic substrate and a prepreg havingminimized temperature dependency of dielectric constant and dissipationfactor.

A fifth object of the invention is to provide a flame retardantsubstrate and prepreg having improved flame retardance, and goodelectrical characteristics at high frequencies for use in electronicparts and circuit substrates.

A sixth object of the invention is to provide a thermosettingpolyvinylbenzyl ether resin composition which in the cured stateexhibits dielectric characteristics that are satisfactory and constantover a wide frequency region and less dependent on temperature andmoisture pickup, and maintains unchanged the physical properties of thepolyvinylbenzyl ether compound featuring heat resistance; which using anadditive type flame retardant to be post added, can be made flameretardant without considerations on reaction conditions and curestresses. It is also intended to provide such a thermosettingpolyvinylbenzyl ether resin composition which has improvedhigh-frequency dielectric characteristics in that the Q value isincreased, without increasing the dielectric constant, in ahigh-frequency region of 100 MHz to 10 GHz.

A seventh object of the invention is to provide a method for preparing athermosetting polyvinylbenzyl ether resin composition which in the curedstate exhibits dielectric characteristics that are satisfactory andconstant over a wide frequency region and less dependent on temperatureand moisture pickup, which maintains unchanged the physical propertiesof the polyvinylbenzyl ether compound featuring heat resistance, whichallows the dielectric dissipation factor to be significantly reduced (togive a high Q value), and which can be used at a low loss in ahigh-frequency region of 100 MHz to 10 GHz.

An eighth object of the invention is to provide a thermosettingpolyvinylbenzyl ether resin composition which in the cured stateexhibits dielectric characteristics that are satisfactory and constantover a wide frequency region and less dependent on temperature andmoisture pickup. The composition yields a composite dielectric materialwhich takes advantage of the properties of dielectric powder and thepolyvinylbenzyl ether compound featuring heat resistance, and when agedunder high-temperature conditions or high-temperature, high-humidityconditions, experiences a minimized change of dielectric constant anddissipation factor (i.e., Q). The composite dielectric materialexperiences a minimized change of dielectric constant and dissipationfactor (i.e., Q) even under high-temperature conditions as encounteredduring reflow. Also provided is a thermosetting polyvinylbenzyl etherresin composition from which the composite dielectric material isobtained. It is also contemplated to render the material flameretardant.

A ninth object of the invention is to provide high-frequency electronicparts having improved high-frequency characteristics and hence, improvedoverall electrical characteristics, using any one of resin substrateshaving improved high-frequency characteristics, magnetic substrateshaving improved high-frequency characteristics, and dielectricsubstrates having improved high-frequency characteristics.

The above and other objects are achieved by the invention which isdefined below.

(1) A composite dielectric material comprising a resin and a ceramicpowder dispersed therein, wherein the resin results from apolyvinylbenzyl ether compound, the content of the ceramic powder isfrom 10 volt to less than 70 volt based on the ceramic powder and thepolyvinylbenzyl ether compound combined, and the composite dielectricmaterial has a Q of at least 250 and a dielectric constant of at least 3at a frequency of at least 500 MHz.

(2) The composite dielectric material of (1) which has been prepared bycuring a mixture of the polyvinylbenzyl ether compound and the ceramicpowder.

(3) The composite dielectric material of (1) or (2) wherein thepolyvinylbenzyl ether compound has the following formula (1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl of from 60:40 to0:100, and n is a number of 2 to 4.

-   -   (4) The composite dielectric material of any one of (1) to (3)        wherein the ceramic powder to be dispersed has a Q of 250 to        50,000 and a dielectric constant of 2.5 to 300 at a frequency of        1 to 15 GHz.

(5) The composite dielectric material of any one of (1) to (4) whereinthe ceramic powder is at least one ceramic based on a compositionselected from the group consisting of TiO₂, CaTiO₃, SrTiO₃,BaO—Nd₂O₃—TiO₂, Bi₂O₃—BaO—Nd₂O₃—TiO₂, BaTi₄O₉, Ba₂Ti₉O₂₀,Ba₂(Ti,Sn)₉O₂₀, MgO—TiO₂, ZnO—TiO₂, MgO—SiO₂, and Al₂O₃ basecompositions.

(6) A composite dielectric material comprising a resin and a ceramicpowder dispersed therein, wherein the resin results from apolyvinylbenzyl ether compound, the ceramic powder is at least oneceramic based on a composition selected from the group consisting ofBaTiO₃, (Ba,Pb)TiO₃, Ba(Ti,Zr)O₃, and (Ba,Sr)TiO₃ base compositions, thecontent of the ceramic powder is from 30 volt to less than 70 volt basedon the ceramic powder and the polyvinylbenzyl ether compound combined,and the composite dielectric material has a dielectric constant of atleast 10 in a high-frequency band of at least 10 MHz.

(7) The composite dielectric material of (6) which has been prepared bycuring a mixture of the polyvinylbenzyl ether compound and the ceramicpowder.

(8) The composite dielectric material of (6) or (7) wherein thepolyvinylbenzyl ether compound has the above formula (1).

(9) The composite dielectric material of any one of (6) to (8) whereinthe ceramic powder to be dispersed has a dielectric constant of 90 to100,000 at a frequency of 100 kHz to 10 MHz.

(10) A composite dielectric substrate comprising a resin and adielectric ceramic powder dispersed therein, wherein the resin resultsfrom a polyvinylbenzyl ether compound, the content of the dielectricceramic powder is from 10 to 65 vol % based on the dielectric ceramicpowder and the polyvinylbenzyl ether compound combined, and thecomposite dielectric substrate is used in a high-frequency region of atleast 100 MHz.

(11) The composite dielectric substrate of (10) which has been preparedby molding and curing a mixture of the polyvinylbenzyl ether compoundand the ceramic powder.

(12) The composite dielectric substrate of (10) or

-   -   (11) wherein the polyvinylbenzyl ether compound has the above        formula (1).

(13) The composite dielectric substrate of any one of (10) to (12)wherein the dielectric ceramic powder has a mean particle size of 0.5 to100 μm.

(14) A prepreg which has been prepared by dispersing a polyvinylbenzylether compound and a dielectric ceramic powder in a solvent to form aslurry, applying the slurry to a cloth base, and drying, wherein thecontent of the dielectric ceramic powder is from 10 to 65 vol % based onthe dielectric ceramic powder and the polyvinylbenzyl ether compoundcombined.

(15) The prepreg of (14) wherein the cloth base is glass cloth.

(16) The prepreg of (14) or (15) wherein the polyvinylbenzyl ethercompound has the above formula (1).

(17) The prepreg of any one of (14) to (16) wherein the dielectricceramic powder has a mean particle size-of 0.5 to 100 μm.

(18) A composite dielectric substrate which has been prepared by heatingand compressing the prepreg of any one of (14) to (17), the substratebeing used in a high-frequency region of at least 100 MHz.

(19) A double side metal-clad composite dielectric substrate which hasbeen prepared by placing the prepreg of any one of (14) to (17) betweena pair of metal foils, followed by laminating press.

(20) A double side metal-clad composite dielectric substrate which hasbeen prepared by dispersing a polyvinylbenzyl ether compound and adielectric ceramic powder in a solvent to form a slurry, applying theslurry onto a metal foil, drying the coating to form the coated metalfoil, and placing a cloth base between a pair of the coated metal foilssuch that the coating is in contact with the cloth base, followed bylaminating press, wherein the content of the dielectric ceramic powderis from 10 to 65 volt based on the dielectric ceramic powder and thepolyvinylbenzyl ether compound combined.

(21) The substrate of (20) wherein the cloth base is glass cloth.

(22) The substrate of (20) or (21) wherein the polyvinylbenzyl ethercompound has the above formula (1).

(23) The substrate of any one of (20) to (22) wherein the dielectricceramic powder has a mean particle size of 0.5 to 100 μm.

-   -   (24) A coated metal foil to be used in the composite dielectric        substrate of any one of (20) to (23).

(25) The coated metal foil of (24) wherein the metal foil is copperfoil.

(26) A composite dielectric substrate which has been prepared bydispersing a polyvinylbenzyl ether compound and a dielectric ceramicpowder in a solvent to form a slurry, followed by drying andcompression, wherein the content of the dielectric ceramic powder isfrom 10 to 65 vol % based on the dielectric ceramic powder and thepolyvinylbenzyl ether compound combined, and the composite dielectricsubstrate is used in a high-frequency region of at least 100 MHz.

(27) A double side metal-clad composite dielectric substrate which hasbeen prepared by dispersing a polyvinylbenzyl ether compound and adielectric ceramic powder in a solvent to form a slurry, drying andmolding the slurry into a molded sheet, and placing the molded sheetbetween a pair of metal foils, followed by laminating press, wherein thecontent of the dielectric ceramic powder is from 10 to 65 vol % based onthe dielectric ceramic powder and the polyvinylbenzyl ether compoundcombined.

(28) The substrate of (26) or (27) wherein the polyvinylbenzyl ethercompound has the above formula (1).

(29) The substrate of any one of (26) to (28) wherein the dielectricceramic powder has a mean particle size of 0.5 to 100 μm.

(30) A molded sheet to be used in the composite dielectric substrate ofany one of (26) to (29).

(31) The composite dielectric substrate of any one of (19) to (23) and(27) to (29) wherein the metal foil is copper foil.

(32) A composite dielectric substrate of multilayer construction whichhas been prepared by laminating press of the prepreg of any one of (14)to (17), the coated metal foil of (24) or (25), the molded sheet of(30), or the composite dielectric substrate of any one of (18) to (23)and (27) to (31).

(33) The composite dielectric substrate of any one of (19) to (23) and(27) to (32), for use in a high-frequency region of at least 100 MHz.

(34) A composite magnetic substrate comprising a magnetic powderdispersed in a polyvinylbenzyl ether compound.

(35) The composite magnetic substrate of (34) wherein thepolyvinylbenzyl ether compound has the above formula (1).

(36) The composite magnetic substrate of (34) or (35) wherein themagnetic powder is of a ferromagnetic metal or ferrite.

(37) The composite magnetic substrate of any one of (34) to (36) whereinthe magnetic powder has a mean particle size of 0.01 to 100 μm.

(38) The composite magnetic substrate of any one of (34) to (37) whereinthe content of the magnetic powder is 50 to 90 wt % based on themagnetic powder and the polyvinylbenzyl ether compound combined.

(39) A prepreg which has been prepared by dispersing a polyvinylbenzylether compound and a magnetic powder in a solvent to form a slurry,applying the slurry to a glass cloth, and drying.

(40) A prepreg which has been prepared by dispersing a polyvinylbenzylether compound and a magnetic powder in a solvent to form a slurry,applying the slurry to a metal foil, and drying.

(41) A substrate which has been prepared by laminating press the prepregof (39).

(42) A double side metal foil-clad substrate which has been prepared byplacing metal foils on opposite surfaces of the prepreg of (39),followed by laminating press.

(43) A double side metal foil-clad substrate which has been prepared byplacing two plies of the prepreg of (40) on opposite surfaces of glasscloth such that the metal foils are positioned outside, followed bylaminating press.

(44) A prepreg which has been prepared by mixing a polyvinylbenzyl ethercompound and a magnetic powder at a temperature of not lower than themelting point of the polyvinylbenzyl ether compound, and molding theresulting solid mixture under pressure.

(45) A substrate which has been prepared by laminating press the prepregof (44).

(46) A double side metal foil-clad substrate which has been prepared byplacing metal foils on opposite surfaces of the prepreg of (44),followed by laminating press.

(47) A multilayer substrate which has been prepared by stacking at leasttwo plies of the prepreg or substrate of any one of (44) to (46),followed by laminating press.

(48) A flame retardant substrate comprising a polyvinylbenzyl ethercompound and a flame retardant dispersed therein.

(49) The flame retardant substrate of (48) wherein the polyvinylbenzylether compound has the above formula (1).

(50) The flame retardant substrate of (48) or (49) wherein the flameretardant is a halogenated phosphate.

(51) The flame retardant substrate of any one of (48) to (50) whereinthe content of the flame retardant is 40 to 60 wt % based on the flameretardant and the polyvinylbenzyl ether compound combined.

(52) A prepreg which has been prepared by dispersing a polyvinylbenzylether compound and a flame retardant in a solvent to form a slurry,applying the slurry to a glass cloth, and drying.

(53) A prepreg which has been prepared by dispersing a polyvinylbenzylether compound and a flame retardant in a solvent to form a slurry,applying the slurry to a metal foil, and drying.

(54) A substrate which has been prepared by laminating press the prepregof (52).

(55) A double side metal foil-clad composite dielectric substrate whichhas been prepared by placing metal foils on opposite surfaces of theprepreg of (52), followed by laminating press.

(56) A double side metal foil-clad substrate which has been prepared byplacing two plies of the prepreg of (53) on opposite surfaces of glasscloth such that the metal foils are positioned outside, followed bylaminating press.

(57) A prepreg which has been prepared by mixing a polyvinylbenzyl ethercompound and a flame retardant at a temperature of not lower than themelting point of the polyvinylbenzyl ether compound, and molding theresulting solid mixture under pressure.

(58) A substrate which has been prepared by laminating press the prepregof (57).

(59) A double side metal foil-clad substrate which has been prepared byplacing metal foils on opposite surfaces of the prepreg of (57),followed by laminating press.

(60) A multilayer substrate which has been prepared by stacking at leasttwo plies of the prepreg or substrate of any one of (52) to (59),followed by laminating press.

(61) A flame retardant polyvinylbenzyl ether resin compositioncomprising a polyvinylbenzyl ether compound and an additive type flameretardant or a mixture of an additive type flame retardant and a flameretardant adjuvant.

(62) The flame retardant polyvinylbenzyl ether resin composition of (61)wherein the additive type flame retardant is a brominated aromatic flameretardant which is present in an amount of 5 to 70% by weight based onthe polyvinylbenzyl ether compound.

(63) The flame retardant polyvinylbenzyl ether resin composition of (61)wherein the flame retardant adjuvant is an inorganic flame retardant,and a mixture of the brominated aromatic flame retardant and theinorganic flame retardant is present in an amount of 5 to 70% by weightbased on the polyvinylbenzyl ether compound.

(64) The flame retardant polyvinylbenzyl ether resin composition of anyone of (61) to (63) wherein the polyvinylbenzyl ether compound has theabove formula (1).

(65) The flame retardant polyvinylbenzyl ether resin composition of(61), (63) or (64) wherein the flame retardant adjuvant is an inorganicflame retardant which has been surface treated with a coupling agent.

(66) A method for preparing a thermosetting polyvinylbenzyl ether resincomposition, comprising the step of dissolving a polyvinylbenzyl ethercompound in a solvent capable of dissolving the compound.

(67) A method for preparing a thermosetting polyvinylbenzyl ether resincomposition, comprising the steps of dissolving a polyvinylbenzyl ethercompound in a solvent capable of dissolving the compound, removing thesolvent from the polyvinylbenzyl ether compound, and obtaining acomposition containing the thus treated polyvinylbenzyl ether compound.

(68) The method of (66) or (67) wherein the composition cures into aproduct having a low dielectric dissipation factor.

(69) The method of any one of (66) to (68) wherein the solvent has adielectric constant of 2 to 16.

(70) The method of any one of (66) to (69) wherein the polyvinylbenzylether compound has the above formula (1).

(71) A thermosetting polyvinylbenzyl ether resin composition which isobtained by the method of any one of (66) to (70) and cures into aproduct having a Q of at least 250 at a frequency of 2 GHz.

(72) A thermosetting polyvinylbenzyl ether resin composition comprisinga polyvinylbenzyl ether compound and a dielectric powder which has beensurface treated with a coupling agent.

(73) The composition of (72) wherein the coupling agent is analkoxysilane or organic functional silane having a pyrolysis initiationtemperature of at least 250° C.

(74) The composition of (72) or (73) wherein the polyvinylbenzyl ethercompound has the above formula (1).

(75) The composition of any one of (72) to (74) wherein the dielectricpowder has been surface treated with 0.1 to 6% by weight based on thedielectric powder of the coupling agent.

(76) The composition of any one of (72) to (0.75) further comprising aflame retardant.

(77) A composite dielectric material which is obtained by curing thethermosetting polyvinylbenzyl ether resin composition of any one of (72)to (75) whereby the dielectric powder is dispersed in a resin resultingfrom the polyvinylbenzyl ether compound.

(78) A composite dielectric material which is obtained by curing thethermosetting polyvinylbenzyl ether resin composition of (76) wherebythe dielectric powder is dispersed in a resin resulting from thepolyvinylbenzyl ether compound and the composite dielectric material isflame retarded.

(79) An electronic part comprising an organic dielectric layercontaining at least a polyvinylbenzyl ether compound, a compositemagnetic layer having a magnetic powder dispersed in a polyvinylbenzylether compound, or a composite dielectric layer having a dielectricpowder dispersed in a polyvinylbenzyl ether compound.

(80) The electronic part of (79) wherein the polyvinylbenzyl ethercompound has the above formula (1).

(81) The electronic part of (79) or (80) further comprising at least onelayer containing at least reinforcing fibers.

(82) The electronic part of any one of (79) to (81) comprising at leastone organic dielectric layer containing the polyvinylbenzyl ethercompound and having a dielectric constant of 2.6 to 3.5 and a dielectricdissipation factor of 0.0025 to 0.005.

(83) The electronic part of any one of (79) to (81) comprising at leastone first composite dielectric layer having a dielectric powderdispersed in a polyvinylbenzyl ether compound, the dielectric powderhaving a dielectric constant of 20 to 10,000 and a dielectricdissipation factor of 0.01 to 0.001, and the first composite dielectriclayer having a dielectric constant of 5 to 20 and a dielectricdissipation factor of 0.0025 to 0.0075.

(84) The electronic part of any one of (79) to (81) comprising at leastone second composite dielectric layer having a dielectric powderdispersed in a polyvinylbenzyl ether compound, the dielectric powderhaving a dielectric constant of 20 to 10,000 and a dielectricdissipation factor of 0.01 to 0.0001 and being present in an amount of40 to 65 volt, and the second composite dielectric layer having adielectric constant of 10 to 40 and a dielectric dissipation factor of0.0075 to 0.025.

(85) The electronic part of any one of (79) to (81) comprising at leastone composite magnetic layer having a magnetic powder dispersed in apolyvinylbenzyl ether compound, the magnetic powder being present in anamount of 25 to 65 volt, and the composite magnetic layer having amagnetic permeability of 3 to 20.

(86) The electronic part of any one of (79) to (85) wherein at least anyone layer contains at least one flame retardant.

As previously discussed, JP-A 9-31006 discloses polyvinylbenzyl ethercompounds which are blended with various fillers and reinforcing fibersto form molding materials and composite materials. Alumina, titaniumdioxide, and barium titanate whiskers are exemplified as the fillerwhile the amount of filler blended is described nowhere.

Composite dielectric organic materials can be prepared by dispersingdielectric powder in polyvinylbenzyl ether compounds and curing thecompounds. The composite dielectric organic materials thus prepared wereobserved to change their dielectric constant and dissipation factor athigh temperature and high humidity. The cause was found to reside in theinterfacial bond between the polyvinylbenzyl ether compound and thedielectric powder which was deficient when the dielectric powder wasused without pretreatment.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is graph showing the dielectric constant versus frequency of acomposite dielectric material according to a first embodiment of theinvention.

FIG. 2 is graph showing the Q versus frequency of the compositedielectric material according to the first embodiment.

FIG. 3 is graph showing the dielectric constant versus frequency of acomposite dielectric material according to a second embodiment of theinvention.

FIG. 4 is graph showing the dielectric constant at 1 MHz versus ferritecontent of substrates (ferrite powder-containing molding materials)according to a fourth embodiment of the invention and a comparativeexample.

FIG. 5 is graph showing the dielectric constant at 100 MHz versusferrite content of substrates (ferrite powder-containing moldingmaterials) according to the fourth embodiment and the comparativeexample.

FIG. 6 is graph showing the dielectric dissipation factor at 100 MHzversus ferrite content of substrates (ferrite powder-containing moldingmaterials) according to the fourth embodiment and the comparativeexample.

FIG. 7 is graph showing the volume resistivity versus ferrite content ofsubstrates (ferrite powder-containing molding materials) according tothe fourth embodiment and the comparative example.

FIG. 8 is graph showing the magnetic permeability versus ferrite contentof substrates (ferrite powder-containing molding materials) according tothe fourth embodiment and the comparative example.

FIG. 9 is graph showing the magnetic permeability versus metal powdercontent of substrates (metal powder-containing molding materials)according to the fourth embodiment and the comparative example.

FIG. 10 is graph showing the dielectric constant versus metal powdercontent of substrates (metal powder-containing molding materials)according to the fourth embodiment and the comparative example.

FIG. 11 is graph showing the magnetic permeability versus frequency atdifferent metal powder contents of substrates (metal powder-containingmolding materials) according to the fourth embodiment and thecomparative example.

FIG. 12 is graph showing the dielectric constant versus ferrite contentof substrates (double side metal foil-clad substrates) according to thefourth embodiment and the comparative example.

FIGS. 13A to 13C schematically illustrate conductor patterns on oppositesides of a substrate device (coil) according to the fourth embodiment ofthe invention, FIG. 13A illustrating a conductor pattern on a frontside, FIG. 13B illustrating a conductor pattern on a rear side, and FIG.13C illustrating a paste pattern formed thereon.

FIG. 14 is a graph showing the impedance and reactance versus frequencyof substrate devices according to the fourth embodiment.

FIG. 15 is a graph showing the dielectric constant versus frequency of amultilayer plate obtained from a composition according to a sixthembodiment of the invention.

FIG. 16 is a graph showing the Q versus frequency of the multilayerplate obtained from a composition according to the sixth embodiment.

FIG. 17 is a graph showing the dielectric constant ∈ of samplesaccording to an eighth embodiment of the invention when aged at hightemperature.

FIG. 18 is a graph showing the Q of the samples according to the eighthembodiment when aged at high temperature.

FIG. 19 is a graph showing the dielectric constant ∈ of the samplesaccording to the eighth embodiment when aged at high temperature andhigh humidity.

FIG. 20 is a graph showing the Q of the samples according to the eighthembodiment when aged at high temperature and high humidity.

FIG. 21 is a graph showing the dielectric constant ∈ of the samplesaccording to the eighth embodiment under reflow conditions.

FIG. 22 is a graph showing the Q of the samples according to the eighthembodiment under reflow conditions.

FIGS. 23 and 24 illustrate an inductor as one exemplary electronic partof the invention.

FIGS. 25 and 26 illustrate an inductor as another exemplary electronicpart of the invention.

FIGS. 27 and 28 illustrate an inductor as a further exemplary electronicpart of the invention.

FIGS. 29 and 30 illustrate an inductor as a still further exemplaryelectronic part of the invention.

FIG. 31 illustrates an inductor as a yet further exemplary electronicpart of the invention.

FIG. 32 is equivalent circuit diagrams of the inductors.

FIGS. 33 and 34 illustrate a capacitor as one exemplary electronic partof the invention.

FIG. 35 illustrates a capacitor as another exemplary electronic part ofthe invention.

FIG. 36 is equivalent circuit diagrams of the capacitors.

FIGS. 37 to 39 illustrate a balun transformer as one exemplaryelectronic part of the invention.

FIG. 40 is an equivalent circuit diagram of the balun transformer.

FIGS. 41 and 42 illustrate a multilayer filter as one exemplaryelectronic part of the invention.

FIG. 43 is an equivalent circuit diagram of the multilayer filter.

FIG. 44 is a graph showing transmission characteristics of themultilayer filter.

FIGS. 45 and 46 illustrate a multilayer filter as another exemplaryelectronic part of the invention.

FIG. 47 is an equivalent circuit diagram of the multilayer filter.

FIG. 48 is a graph showing transmission characteristics of themultilayer filter.

FIGS. 49 to 52 illustrate a block filter as another exemplary multilayerelectronic part of the invention.

FIG. 53 is an equivalent circuit diagram of the block filter.

FIG. 54 is a schematic view of a mold for forming the block filter.

FIGS. 55 to 57 illustrate a coupler as one exemplary electronic part ofthe invention.

FIG. 58 illustrates the internal connections of the coupler.

FIG. 59 is an equivalent circuit diagram of the coupler.

FIGS. 60 to 62 illustrate an antenna as one exemplary electronic part ofthe invention.

FIGS. 63 and 64 illustrate an antenna as another exemplary electronicpart of the invention.

FIGS. 65 and 66 illustrate a patch antenna as one exemplary electronicpart of the invention.

FIGS. 67 and 68 illustrate a patch antenna as another exemplaryelectronic part of the invention.

FIGS. 69 and 70 illustrate a patch antenna as a further exemplaryelectronic part of the invention.

FIGS. 71 and 72 illustrate a patch antenna as a still further exemplaryelectronic part of the invention.

FIGS. 73 and 74 illustrate a VCO as one exemplary electronic part of theinvention.

FIG. 75 is an equivalent circuit diagram of the VCO.

FIGS. 76 and 77 illustrate a power amplifier as one exemplary electronicpart of the invention.

FIG. 78 is an equivalent circuit diagram of the power amplifier.

FIGS. 79 and 80 illustrate a superposed module as one exemplaryelectronic part of the invention.

FIG. 81 is an equivalent circuit diagram of the superposed module.

FIGS. 82 and 83 illustrate a RF module as one exemplary electronic partof the invention.

FIGS. 84 and 85 illustrate a RF module as another exemplary electronicpart of the invention.

FIGS. 86 and 87 illustrate a resonator as one exemplary electronic partof the invention.

FIGS. 88 and 89 illustrate a resonator as another exemplary electronicpart of the invention.

FIGS. 90 and 91 illustrate a resonator as a further exemplary electronicpart of the invention.

FIG. 92 is an equivalent circuit diagram of the resonator.

FIG. 93 is a block diagram showing a high-frequency portion of aportable equipment as one exemplary electronic part of the invention.

FIGS. 94A to 94D illustrate steps of a process for forming a copperfoil-clad substrate.

FIGS. 95A to 95D illustrate steps of another process for forming acopper foil-clad substrate.

FIGS. 96 and 97 illustrate steps of a process for forming a copperfoil-clad substrate.

FIGS. 98 and 99 illustrate steps of a process for forming a multilayersubstrate.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the first embodiment of the invention, the composite dielectricmaterial has a ceramic powder dispersed in a resin resulting from apolyvinylbenzyl ether compound. The composite dielectric material has aQ of at least 250, preferably 250 to 500 and a dielectric constant of atleast 3, preferably 5 to 40, at a high frequency of at least 500 MHz,preferably 1 to 60 GHz. The composite dielectric material exhibits a Qof at least 50, preferably 200 to 500 and a dielectric constant ∈ of atleast 3, preferably 5 to 40, over a high-frequency band of at least 500MHz, preferably from 1 to 60 GHz.

By virtue of relatively high values of Q and E in the high-frequencyband, the composite dielectric material is suited for use in anapplication where such properties are required, for example, suchelectronic parts as strip lines, impedance matching circuits, delaycircuits, and antennas, enabling the size reduction of such parts.

By properly selecting the type and amount of ceramic to be dispersed, acomposite dielectric material having the desired properties for aparticular application or purpose is obtained.

In the second embodiment, the composite dielectric material has aceramic powder dispersed in a resin resulting from a polyvinylbenzylether compound. The composite dielectric material has a dielectricconstant ∈ of at least 10, preferably 10 to 50 in a high-frequency bandof at least 10 MHz, preferably from 100 MHz to 10 GHz.

By virtue of relatively high values of ∈ in the high-frequency band, thecomposite dielectric material is suited for use in an application wheresuch properties are required, for example, such electronic parts ascapacitor-built-in circuit boards, hybrid parts and capacitors, enablingthe size reduction of such parts.

By properly selecting the type and amount of ceramic to be dispersed, acomposite dielectric material having the desired properties for aparticular application or purpose is obtained.

In the third embodiment, the composite dielectric substrate is obtainedby properly combining a prepreg obtained by dispersing a dielectricceramic powder in a polyvinylbenzyl ether compound to form a slurry, andapplying the slurry to a cloth base such as glass cloth, followed bydrying, the polyvinylbenzyl ether compound being polymerized or curedinto a base resin, a coated metal foil obtained by applying the slurryto a metal foil such as copper foil, followed by drying, a laminationpressed sheet obtained by drying and lamination pressing the slurry, ametal foil such as copper foil, and a cloth base such as glass cloth;and lamination pressing the combination. Depending on the combination,the substrate may or may not have metal foils such as copper foils onopposite surfaces, and even a multilayer structure can be formed.

The composite dielectric substrate of the third embodiment is suitablefor use in a high-frequency region of at least 100 MHz, preferably atleast 500 MHz, especially 1 to 60 GHz. In the high-frequency region, thesubstrate has a dielectric constant of about 4 to 40 and a Q of about 40to 500. It is thus possible to control ∈ and Q over a wide range. Achoice of a composite dielectric substrate having the desired dielectriccharacteristics for a particular purpose is possible.

In the fourth embodiment, the composite magnetic substrate material hasa magnetic powder dispersed in a polyvinylbenzyl ether compound. Withthis construction, the composite magnetic substrate material has a lowdielectric constant and is suitable for use in a high-frequency band ofat least 100 MHz, preferably from 100 MHz to 10 GHz. The content ofmagnetic powder can be increased to such a level that the compositemagnetic substrate material is suitable for use in an applicationutilizing magnetic characteristics and for magnetic shielding purposes.Additionally, the composite magnetic substrate material has a highstrength. When a substrate is formed using the composite magneticsubstrate material, bonding and patterning of copper foil are possiblewithout the aid of a nonmagnetic layer or adhesive, and a multilayerstructure can be realized. Such patterning and multiple layer stackingcan be carried out by the same process as the conventional substratemanufacturing process, achieving a cost reduction and an improvement inworking. The substrate thus obtained has a high strength and improvedhigh-frequency characteristics.

In the fifth embodiment, the flame retardant substrate material has aflame retardant dispersed in a polyvinylbenzyl ether compound. With thisconstruction, the substrate material is flame retardant, has a lowdielectric constant and is suitable for use in a high-frequency band ofat least 100 MHz, preferably from 100 MHz to 10 GHz. Additionally, thesubstrate has a high strength. When a substrate is formed using theflame retardant substrate material, bonding and patterning of copperfoil are possible without the aid of an adhesive, and a multilayerstructure can be realized. Such patterning and multiple layer stackingcan be carried out by the same process as the conventional substratemanufacturing process, achieving a cost reduction and an improvement inworking. The substrate thus obtained has a high strength and improvedhigh-frequency characteristics.

In the sixth embodiment, the resin composition is intended to renderflame retardant a resin resulting from polymerization or curing of apolyvinylbenzyl ether compound. This resin composition contains apolyvinylbenzyl ether compound and an additive type flame retardant orboth an additive type flame retardant and a flame retardant adjuvant.The additive type flame retardant has little influence on curingconditions and is easy to handle because it need not take into accountreaction conditions. As compared with reactive type flame retardants,the additive type flame retardant avoids differential shrinkage uponcuring under different conditions, resulting in a less variance amongproducts.

In the seventh embodiment, the method for preparing a polyvinylbenzylresin composition by dissolving a polyvinylbenzyl ether compound in asolvent capable of dissolving the compound and preferably, thereafterremoving the solvent, yielding a solvent-treated polyvinylbenzyl ethercompound. In the thus obtained polyvinylbenzyl ether compound, thesolvent may have been completely removed or part of the solvent may beleft behind. Using the solvent-treated polyvinylbenzyl ether compound, athermosetting polyvinylbenzyl ether resin composition is prepared. Theuse of the solvent-treated polyvinylbenzyl ether compound ensures thatthe corresponding composition in the cured state has improved dielectriccharacteristics over a wide frequency region, especially ahigh-frequency region of from 100 MHz to 10 GHz, as compared with theuse of untreated polyvinylbenzyl ether compound. In particular, a high Qvalue (i.e., low dissipation factor) in the high-frequency region isobtained. It is believed that the molecular arrangement of thepolyvinylbenzyl ether compound is disintegrated or loosened by theinteracting solvent or other factors, and this accounts for a high Qvalue in the cured state.

In the eighth embodiment, the thermosetting polyvinylbenzyl ether resincomposition contains a polyvinylbenzyl ether compound and a dielectricpowder which has been surface treated with a coupling agent. Curing theresin composition yields a composite dielectric material. Since thedielectric powder which has been surface treated with a coupling agentis used in the composite dielectric material, the interface between thedielectric powder and the resin material is improved and their bondbecomes tight. Then, even when aged under high-temperature conditions orhigh-temperature, high-humidity conditions, the composite dielectricmaterial experiences minimal changes of dielectric constant anddissipation factor (i.e., Q). Especially when an alkoxysilane or organicfunctional silane coupling agent having a pyrolysis initiationtemperature of at least 250° C. is used, the composite dielectricmaterial experiences minimal changes of dielectric constant anddissipation factor even under high-temperature conditions as typified bythe reflow temperature.

In the ninth embodiment, the electronic part of the composite resin typehas an organic dielectric layer containing at least a polyvinylbenzylether compound, a composite magnetic layer having a magnetic powderdispersed in a polyvinylbenzyl ether compound, or a composite dielectriclayer having a dielectric powder dispersed in a polyvinylbenzyl ethercompound, all as defined above. This construction ensures ease ofadjustment of a dielectric constant and a lowering of dielectricconstant, allowing the electronic part to be used in a high-frequencyregion of at least 100 MHz, preferably from 100 MHz to 10 GHz. Thecomposite magnetic layers are suitable for use in an applicationutilizing magnetic characteristics and for magnetic shielding purposes.The composite dielectric layers can have relatively high values of Q and∈ in the high-frequency band, so that the composite dielectric substrateis suited for use in an application where such properties are required,for example, such electronic parts as strip lines, impedance matchingcircuits, delay circuits, and antennas. Additionally, the compositedielectric substrate has a high strength.

When a substrate or multilayer electronic part is formed using thecomposite magnetic layers or composite dielectric layers, bonding andpatterning of copper foil are possible without the aid of adhesive, anda multilayer structure can be realized. Such patterning and multiplelayer stacking can be carried out by the sane process as theconventional substrate manufacturing process, achieving a cost reductionand an improvement in working. The electronic part based on thesubstrate thus obtained has a high strength and improved high-frequencycharacteristics.

The polyvinylbenzyl ether compound used herein typically has thefollowing general formula (1).

Herein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl of from 60:40 to0:100, and n is a number of 2 to 4.

Also preferably, the polyvinylbenzyl ether compound of the formula (1)used herein is prepared by reacting a polyphenol of the followinggeneral formula (2):

wherein R¹, R² and n are as defined above with a vinylbenzyl halide inthe presence of an alkali metal hydroxide.

In formulas (1) and (2), R¹ is methyl or ethyl.

R² is hydrogen or a hydrocarbon group of 1 to 10 carbon atoms, examplesof which include substituted or unsubstituted alkyl, aralkyl and arylgroups. Exemplary alkyl groups are methyl, ethyl, propyl and butyl, anexemplary aralkyl group is benzyl, and an exemplary aryl group isphenyl.

R³ is hydrogen or a vinylbenzyl group. The hydrogen atom originates fromthe starting compound used in the synthesis of the compound of formula(1). The molar ratio of hydrogen to vinylbenzyl is from 60:40 to 0:100,and preferably from 40:60 to 0:100.

The letter n is a number of 2 to 4.

The molar ratio of hydrogen to vinylbenzyl in R³ set within theabove-defined range permits the curing reaction to proceed to a fullextent in forming a dielectric, leading to satisfactory dielectriccharacteristics. As the unreacted compound wherein R³ is hydrogen isleft more, the curing reaction proceeds to a less extent, failing toachieve satisfactory dielectric characteristics.

Illustrative examples of the compound of formula (1) are shown below interms of the combination of R¹, but not limited thereto.

Compound No. R¹ R² R³ n 1 methyl C₁₋₁₀ alkyl  0:100 3 2 methyl C₁₋₁₀alkyl  5:95 3 3 methyl C₁₋₁₀ alkyl 60:40 3 4 methyl C₁₋₁₀ alkyl 40:60 35 methyl C₁₋₁₀ alkyl 20:80 3

Note that R³ is represented by a molar ratio of H/vinylbenzyl, and“C₁₋₁₀ alkyl” is a mixture of alkyl groups of 1 to 10 carbon atomsinclusive of aralkyl groups.

The polyvinylbenzyl ether compound of formula (1) can be synthesized,for example, by reacting a polyphenol of the general formula (2) with avinylbenzyl halide as descried in JP-A 9-31006.

The reaction of a polyphenol with a vinylbenzyl halide may be effectedin any desired manner. Typical methods are method I of reacting apolyphenol with a vinylbenzyl halide in a polar neutral solvent, usingan alkali metal hydroxide as a dehydrochlorination agent, and method IIof reacting a polyphenol with a vinylbenzyl halide in a water/organicsolvent mixture in the presence of a phase transfer catalyst (e.g.,quaternary ammonium salt) at a temperature of up to 100° C., using analkali metal hydroxide as a dehydrochlorination agent.

The polyphenol of formula (2) is commercially available, for example,under the trade name of PP-700-300 and PP-1000-180 from Nippon Oil K.K.

Examples of the vinylbenzyl halide include p-vinylbenzyl chloride,m-vinylbenzyl chloride, a mixture of p-vinylbenzyl chloride andm-vinylbenzyl chloride, p-vinylbenzyl bromide, m-vinylbenzyl bromide,and a mixture of p-vinylbenzyl bromide and m-vinylbenzyl bromide. Ofthese, p-vinylbenzyl chloride, and a mixture of p-vinylbenzyl chlorideand m-vinylbenzyl chloride are preferred. The use of p-vinylbenzylchloride results in a polyvinylbenzyl ether compound having goodsymmetry, a high melting point and a high softening point. The use of amixture of p-vinylbenzyl chloride and m-vinylbenzyl chloride results ina polyvinylbenzyl ether compound having a low melting point and a lowsoftening point which is easy to work.

The proportion of polyphenol and vinylbenzyl halide may be selected asappropriate. For example, the polyphenol and vinylbenzyl halide are usedin a molar ratio of from 100:40 to 100:120.

Examples of the polar neutral solvent include dimethylformamide,dimethylsulfoxide, dimethylacetamide, N-methylpyrrolidone, dioxane,acetonitrile, tetrahydrofuran, ethylene glycol dimethyl ether,1,3-dimethoxypropane, 1,2-dimethoxypropane, tetramethylenesulfone,hexamethyl-phosphoramide, methyl ethyl ketone, methyl isobutyl ketone,and acetone, and mixtures thereof.

Examples of the alkali metal hydroxide are potassium hydroxide, sodiumhydroxide and a mixture thereof. The alkali metal hydroxide is used inan amount of about 1.1 to 2.0 mol per mol of phenolic hydroxyl groups.

In either Method I or II, a reaction temperature of about 30 to 100° C.and a reaction time of about 0.5 to 20 hours are appropriate.

When the polyvinylbenzyl ether compound is prepared by either of theabove methods, some blending formulations of polyphenol and vinylbenzylhalide will result in compounds in which all the phenolic hydroxylgroups on the polyphenol of formula (2) have not been replaced byvinylbenzyl groups. In this case, the reaction product is a mixture ofthe polyvinylbenzyl ether compound of formula (1) and the polyphenol offormula (2). In the practice of the invention, the presence of thepolyphenol is acceptable as long as the content of the polyphenol isbelow a specific level, that is, below 60 mol % of the mixture.Inclusion of more than 60 mol % of the polyphenol is undesirable becausesubsequent curing reaction does not proceed to a full extent, failing toachieve satisfactory dielectric characteristics.

The percent substitution at which the phenolic hydroxyl groups on thepolyphenol of formula (2) are replaced by vinylbenzyl groups ispreferably 40 to 100 mol %, and especially 60 to 100 mol %. Of course, ahigher percent substitution is desirable. The percent substitution canbe adjusted as appropriate by controlling the blending formulation ofpolyphenol and vinylbenzyl halide.

Where the presence of polyphenol is not permissible, the blendingformulation of polyphenol and vinylbenzyl halide is determined asappropriate, and the unreacted reactant is removed by suitable meanssuch as a re-precipitation purification method using a combination ofsolvent and non-solvent systems.

According to the invention, the polyvinylbenzyl ether compound isdissolved in a solvent for the purpose of solvent treatment. Any desiredsolvent may be used for dissolving the polyvinylbenzyl ether compound aslong as the compound is soluble in that solvent. The preferred solventhas a solubility corresponding to at least 20 g of the polyvinylbenzylether compound in 100 g of the solvent. Those solvents having adielectric constant ∈ of 2 to 16 are especially preferred.

In general, the dielectric constant is used as one factor representingthe ease of polarization of a solvent. The dielectric constant of asolvent is determined as∈=E/E ₀wherein E is a potential difference between a pair of electrodes withthe solvent therebetween when an electric field is applied thereacrossand E₀ is a potential difference between a pair of electrodes in vacuum.In general, the dielectric constant of a solvent corresponds to thesolubility of a polar substance in that solvent.

Solvents which are commonly used and not limited to those used in theinvention are listed below together with their dielectric constant andsolubility of a polyvinylbenzyl ether compound. TABLE 1 DielectricSolubility of poly- Solvent constant vinylbenzyl ether hexane 1.89insoluble dioxane 2.227 good toluene 2.24 good benzene 2.3 good o-xylene2.266 good m-xylene 2.334 good p-xylene 2.27 good tetrahydrofuran 5.4good methyl isobutyl 13.11 good ketone methyl ethyl 15.45 good ketoneacetone 21.45 difficult methanol 32.35 insoluble

Those solvents listed nearer to the bottom of Table 1 are more polar. Asseen from Table 1, the polyvinylbenzyl ether compound is soluble in thesolvents having a dielectric constant of 2 to 16.

Polyvinylbenzyl ether compounds have a dielectric constant of 2.5 to 2.6and are well soluble not only in solvents having a dielectric constantclose thereto, but also in solvents having a relatively high dielectricconstant because these solvents are polar solvents. In Table 1, thelevel above which solubility is judged good is the solubility of 20 g ofthe polyvinylbenzyl ether compound in 100 g of the solvent. Thedifficultly soluble level corresponds to a solubility of more than 1 gto less than 20 g of the compound in 100 g of the solvent. The insolublelevel corresponds to a solubility of up to 1 g of the compound in 100 gof the solvent.

Thus, in the practice of the invention, a choice may be made among thosesolvents in which the polyvinylbenzyl ether compound is judged solublein Table 1.

In dissolving or dispersing the polyvinylbenzyl ether compound in asolvent, any method capable of agitating or rocking a solution ordispersion may be used. Heating or ultrasonic vibration may be used incombination in order to shorten the dissolving or dispersing time.

Thereafter, the solution or dispersion is dried for removing at leastpart of the solvent from the solution or dispersion. This yields thesolvent-treated polyvinylbenzyl ether compound.

In one preferred embodiment of the invention, the composition containsthe solvent-treated polyvinylbenzyl ether compound. It is most preferredthat all the polyvinylbenzyl ether compound used be solvent-treated one.The co-presence of the untreated polyvinylbenzyl ether compound isacceptable as long as its content is less than 80% by weight of theentire polyvinylbenzyl ether compounds.

The polyvinylbenzyl ether compounds may be used alone or in admixture oftwo or more.

The polyvinylbenzyl ether compound may be used alone for polymerizationto form a resin or in combination with another polymer forcopolymerization to form a resin. Alternatively, it may be used incombination with another resin.

Copolymerizable monomers used herein include styrene, vinyltoluene,divinylbenzene, divinyl benzyl ether, allylphenol, allyloxybenzene,diallyl phthalate, acrylates, methacrylates, and vinyl pyrrolidone. Anappropriate proportion of such monomer blended is about 2 to 50% byweight based on the polyvinylbenzyl ether compound.

The other resins which can be used in combination include thermosettingresins such as vinyl ester resins, unsaturated polyester resins,maleimide resins, polyphenol polycyanate resins, epoxy resins, phenolicresins, and vinylbenzyl compounds, and thermoplastic resins such aspolyether imide, polyether sulfone, polyacetal and dicyclopentadieneresins. An appropriate proportion of such resin blended is about 5 to90% by weight based on the polyvinylbenzyl ether compound. A choice maybe preferably made among vinyl ester resins, unsaturated polyesterresins, maleimide resins, polyphenol polycyanate resins, epoxy resins,and mixtures thereof.

The thermosetting resin composition comprising the polyvinylbenzyl ethercompound alone or in combination with the other monomer or thermosettingresin can be polymerized and cured in a well-known manner. Curing may bedone in the presence or absence of a curing agent. Typical curing agentsare well-known radical polymerization initiators such as benzoylperoxide, methyl ethyl ketone peroxide, dicumyl peroxide, and t-butylperbenzoate. The curing agent is used in an amount of 0 to about 10parts by weight per 100 parts by weight of the polyvinylbenzyl ethercompound.

The curing temperature varies depending on the presence or absence ofthe curing agent and the type of curing agent. A temperature of about 20to 250° C., and preferably about 50 to 250° C. is sufficient for fullcuring.

Also, hydroquinone, benzoquinone, copper salts or the like may beblended for cure adjustment purposes.

The ceramic powder used in the first embodiment should have a high Q anddielectric constant. Preferably the ceramic powder has a dielectricconstant of 2.5 to 300 and a Q of 250 to 50,000 at a frequency of 1 to15 GHz. By dispersing a ceramic powder having a high Q and dielectricconstant in a resin resulting from a polyvinylbenzyl ether compound, acomposite dielectric material having a high Q and dielectric constant isobtainable.

The ceramic powder used in the first embodiment may have a greaterdielectric constant and Q in a high-frequency band than the resinserving as the dispersing medium. It is acceptable to use a mixture oftwo or more ceramic powders.

The ceramic powder may also be single crystal sapphire (or similar)powder or polycrystalline alumina powder. Preferred types of ceramicpowder are powders of dielectrics based on the following compositions.The compositions are shown together with their dielectric constant ∈ andQ at a frequency of 1 to 15 GHz. Composition ε Q Mg₂SiO₄ 7 20,000 Al₂O₃9.8 40,000 MgTiO₃ 17 22,000 ZnTiO₃ 26 800 Zn₂TiO₄ 15 700 TiO₂ 104 15,000CaTiO₃ 170 1,800 SrTiO₃ 255 700 SrZrO₃ 30 1,200 BaTi₂O₅ 42 5,700 BaTi₄O₉38 9,000 Ba₂Ti₉O₂₀ 39 9,000 Ba₂(Ti,Sn)₉O₂₀ 37 5,000 ZrTiO₄ 39 7,000(Zr,Sn)TiO₄ 38 7,000 BaNd₂Ti₅O₁₄ 83 2,100 BaSm₂TiO₁₄ 74 2,400Bi₂O₃—BaO—Nd₂O₃—TiO₂ 88 2,000 PbO—BaO—Nd₂O₃—TiO₂ 90 5,200(Bi₂O₃,PbO)—BaO—Nd₂O₃—TiO₂ 105 2,500 La₂Ti₂O₇ 44 4,000 Nd₂Ti₂O₇ 37 1,100(Li,Sm)TiO₃ 81 2,050 Ba(Mg_(1/3)Ta_(2/3))O₃ 25 35,000Ba(Zn_(1/3)Ta_(2/3))O₃ 30 14,000 Ba(Zn_(1/3)Nb_(2/3))O₃ 41 9,200Sr(Zn_(1/3)Nb_(2/3))O₃ 40 4,000

Preferred among others are those dielectrics based on the compositions:TiO₂, CaTiO₃, SrTiO₃, BaO—Nd₂O₃—TiO₂, Bi₂O₃—BaO—Nd₂O₃—TiO₂, BaTi₄O₉,Ba₂Ti₉O₂₀, Ba₂(Ti,Sn)₉O₂₀, MgO—TiO₂, ZnO—TiO₂, MgO—SiO₂, and Al₂O₃.

The ceramic powder may further contain Mn oxide, Nb₂O₅, V₂O₅, SiO₂,B₂O₃, and glass as an auxiliary component. Existing dielectric materialsavailable in plenty may also be used as the ceramic powder. For example,used ceramics and ceramic capacitor-forming powder prior to sinteringare available. In these ceramic powders, donors for oxides of alkalineearth metals such as Mg, Ca, Sr and Ba, oxides of transition metals suchas Mn, Co and Ni, oxides of Nb, V, Mo and W, oxides of rare earthelements such as Y, Sc and La, SiO₂, B₂O₃, and glass are sometimescontained as an auxiliary component for the purposes of improving Q,sinterability and temperature properties.

The ceramic powder or particles should preferably have a mean particlesize of about 0.2 to 100 μm so that ceramic particles are effectivelymilled with the resin. Particles with too small a particle size may bedifficult to mill with the resin. Too large a particle size mayinterfere with uniform dispersion and mixing. Then a composition havinga larger content of ceramic powder of such large particle size may failto form a consolidated body when molded.

In the composite dielectric material of the first embodiment containinga resin resulting from a polyvinylbenzyl ether compound and a ceramicpowder as main components, the content of ceramic powder is from 10% byvolume to less than 70% by volume provided that the total of the resinand ceramic powder is 100% by volume. Preferably, the content of ceramicpowder is 20 to 60% by volume. A ceramic powder content of 70 vol % ormore obstructs the flow during press molding, failing to form aconsolidated body. Then electric properties deteriorate due to easyentry of water. Such a greater ceramic powder content can also result ina substantial lowering of Q as compared with the composition having noceramic powder added. At a content of less than 10 vol %, the ceramicpowder fails to exert its effect.

By properly setting the contents of the respective components within theabove range, the composite dielectric material of the first embodimentcan have a greater dielectric constant and Q than those of the resinresulting from the polyvinylbenzyl ether compound and especially anydesired dielectric constant and Q.

The ceramic powder used in the second embodiment should have a highdielectric constant. By dispersing a ceramic powder having a dielectricconstant of at least 90 at a frequency of at least 100 kHz in a resinresulting from a polyvinylbenzyl ether compound, a composite dielectricmaterial having a high dielectric constant is obtainable.

Any desired ceramic powder may be used in the second embodiment as longas it has a high dielectric constant. It is acceptable to use two ormore ceramic powders. Preferred types of ceramic powder are powders ofdielectrics based on the following compositions. The compositions areshown together with their dielectric constant ∈ at a frequency of 100kHz to 10 MHz. Composition ε BaTiO₃ 1,500 (Ba,Pb)TiO₃ 6,000 Ba(Ti,Zr)O₃9,000 (Ba,Sr)TiO₃ 7,000

Preferred among others are those dielectrics based on the compositions:BaTiO₃ and Ba(Ti,Zr)O₃.

The ceramic powder may also be a single crystal or polycrystallinepowder.

The ceramic powder may further contain Mn oxide, Nb₂O₅, V₂O₅, SiO₂,B₂O₃, and glass as an auxiliary component. Existing dielectric materialsavailable in plenty may also be used as the ceramic powder. For example,used ceramics and ceramic capacitor-forming powder prior to sinteringare available. In these ceramic powders, donors for oxides of alkalineearth metals such as Mg, Ca, Sr and Ba, oxides of transition metals suchas Mn, Co and Ni, oxides of Nb, V, Mo and W, oxides of rare earthelements such as Y, Sc and La, SiO₂, B₂O₃, and glass are sometimescontained as an auxiliary component for the purposes of improving Q,sinterability and temperature properties.

The ceramic powder used in the second embodiment should preferably havea dielectric constant of at least 90 and more preferably 90 to 100,000at a frequency of at least 100 kHz, and preferably 100 kHz to 10 MHz.

Since it is quite difficult to measure the dielectric constant at a highfrequency of a ceramic having a high dielectric constant and a highdissipation factor, the dielectric constant described herein is ameasurement in capacitor form at a conventional frequency.

The ceramic powder or particles should preferably have a mean particlesize of about 0.2 to 100 μm so that ceramic particles are effectivelymilled with the resin. Particles with too small a particle size may bedifficult to mill with the resin. Too large a particle size mayinterfere with uniform dispersion and mixing. Then a composition havinga larger content of ceramic powder of such large particle size may failto form a consolidated body when molded.

In the composite dielectric material of the second embodiment containinga resin resulting from a polyvinylbenzyl ether compound and a ceramicpowder as main components, the content of ceramic powder is from 30% byvolume to less than 70% by volume provided that the total of the resinand ceramic powder is 100% by volume. Preferably, the content of ceramicpowder is 40 to 60% by volume. A ceramic powder content of 70 vol % ormore obstructs the flow during press molding, failing to form aconsolidated body. Then electric properties deteriorate due to easyentry of water. A substantial lowering of dielectric constant is anotherdisadvantage. At a content of less than 30 vol %, the ceramic powderfails to exert its effect.

By properly setting the contents of the respective components within theabove range, the composite dielectric material of the second embodimentcan have a greater dielectric constant.

The polymerized or cured product of the polyvinylbenzyl ether compoundis a polymeric material having a low dielectric constant (typically∈=about 2.6 at 2 GHz) and a low dissipation factor (typically tan δ=0.01to 0.0001 at 2 GHz) in a high-frequency region as well as improvedinsulating properties, heat resistance and low water absorption.

Regarding the polymerized or cured product of polyvinylbenzyl ethercompound (VB), commercially available FR-4 and FR-5 (epoxy resin bySumitomo Bakelite), BT resin (bismaleimide resin by Mitsubishi GasChemical K.K.), and polyphenylene ether (PPE), Table 2 shows theirmoisture pickup (85° C./RH 85% for 500 hours), glass transitiontemperature (Tg) by differential scanning calorimetry (DSC), anddecomposition initiation temperature (Td) by thermogravimetry anddifferential thermal analysis (TG/DTA). TABLE 2 Moisture pickup Tg Td VB0.07% 192° C. 435° C. FR-4 0.67% 135° C. 330° C. FR-5 0.17% 140° C. 360°C. BT resin 0.32% 195° C. 356° C. PPE 0.22% 178° C. 366° C.

The dielectric ceramic material providing the dielectric ceramic powderused in the third embodiment should preferably have a dielectricconstant (∈) of at least 10 and more preferably at least 20 at 2 GHz anda dissipation factor (tan δ) of up to 0.01 at 2 GHz though not limitedthereto. The upper limit of dielectric constant is usually about 10,000though not critical. The lower limit of dissipation factor is usuallyabout 0.0001 though not critical. Preferred materials includetitanium-barium-neodymium base ceramics, titanium-barium-tin baseceramics, lead-calcium base ceramics, titanium dioxide (TiO₂) baseceramics, barium titanate base ceramics (including BaTiO₃—BaZrO₃,BaO—TiO₂—Nd₂O₃ and BaO—TiO₂—SnO₂ systems), lead titanate base ceramics,strontium titanate (SrTiO₃) base ceramics, calcium titanate (CaTiO₃)ceramics, bismuth titanate base ceramics, and magnesium titanate(MgTio₃) base ceramics. Also included are CaWO₄ base ceramics,Ba(Mg,Nb)O₃ base ceramics, Ba(Mg,Ta)O₃ base ceramics, Ba(Co,Mg,Nb)O₃base ceramics, and Ba(Co,Mg,Ta)O₃ base ceramics. They may be used aloneor in admixture of two or more.

The titanium dioxide base ceramics include one consisting of titaniumdioxide and those ceramics containing minor amounts of additives inaddition to titanium dioxide, while they should maintain the crystallinestructure of titanium dioxide. The same applies to the remainingceramics. While the titanium dioxide is represented by TiO₂ and has avariety of crystalline structures, those titanium dioxide species havingthe rutile structure are used as the dielectric ceramic.

For uniform dispersion and mixing and high loading, the dielectricceramic powder or particles should preferably have a mean particle sizeof 0.1 to 150 μm, especially 0.5 to 100 μm. Too large a particle sizemay allow for substantial settlement in paste form and interfere withuniform dispersion and mixing. Too small a particle size corresponds toa greater surface area, which may obstruct high loading.

In the composite dielectric material of the third embodiment containinga polyvinylbenzyl ether compound and a dielectric ceramic powder as maincomponents, the content of dielectric ceramic powder is 10 to 65% byvolume provided that the total of the polyvinylbenzyl ether compound anddielectric ceramic powder is 100% by volume. This range of dielectricceramic powder content leads to a higher dielectric constant and ensureseffective mixing and dispersion of the dielectric ceramic powder in thepolyvinylbenzyl ether compound. In contrast, if the content ofpolyvinylbenzyl ether compound is less than 35 vol % and the content ofdielectric ceramic powder is more than 65 vol %, mixing and dispersionof the dielectric ceramic powder in the polyvinylbenzyl ether compoundbecomes difficult. In preparing a prepreg, application to cloth basesuch as glass cloth becomes difficult. Even when press molding andapplication to cloth base such as glass cloth become possible byviscosity adjustment with a solvent, the prepreg becomes unbondable dueto poor bond and brittle molded products. If the content ofpolyvinylbenzyl ether compound is more than 90 vol % and the content ofdielectric ceramic powder is less than 10 vol %, the resulting materialhas a dielectric constant of less than 4, failing to achieve theadvantage of high dielectric constant.

Any desired magnetic powder may be used in the fourth embodimentalthough ferrite or ferromagnetic metal powder is typically used.Examples of the ferrite are Mn—Mg—Zn, Ni—Zn, and Mn—Zn base systems,with the Mn—Mg—Zn and Ni—Zn base systems being preferred.

Preferred ferromagnetic metals are iron carbonyl, iron-silicon basealloys, iron-aluminum-silicon base alloys (trade name: Sendust),iron-nickel base alloys (trade name: Permalloy), and amorphous alloysincluding iron and cobalt base alloys.

Means for dividing these materials into particles may be well-knowntechniques such as grinding and granulation.

The magnetic powder or particles should preferably have a particle sizeof 0.01 to 100 μm and a mean particle size of 1 to 50 μm. Magneticparticles with a size in this range are effectively dispersed, achievinga better effect. Too large a particle size may allow particles to settlein paste form, failing to achieve uniform dispersion. When a compositionof such large particles is formed into thin-wall substrates or prepregs,few may have a smooth surface. Since it is practically difficult todivide the material into particles of an extremely small size, the lowerlimit of particle size is about 0.01 μm.

Preferably the magnetic powder has a uniform distribution of particlesize. If desired, a fraction of particles having a uniform particle sizeis collected by sieving. The magnetic particles may have any desiredshape including spherical, flat and elliptic shapes. A choice may bemade depending on a particular application. If desired, magneticparticles may be subjected on their surface to such treatment asoxidation, coupling or coating of organic insulating material.

It is acceptable to use two or more magnetic powders which differ intype or particle size distribution. Such different magnetic powders maybe mixed in any desired ratio. The type, particle size and mixing ratioof magnetic powder may be determined depending on a particularapplication.

The magnetic powder preferably has a magnetic permeability μ of 10 to1,000,000. It is preferred that the magnetic powder in bulk form havegreater insulation because substrates formed therefrom are improved ininsulation.

The polyvinylbenzyl ether compound and magnetic powder are preferablymixed such that at the stage of a paste to be applied to glass cloth,the weight ratio of polyvinylbenzyl ether compound to magnetic powdermay range from 100:100 to 100:900. That is, the preferred content ofmagnetic powder is 50 to 90% by weight. A magnetic powder content withinthis range ensures the benefits of the invention. Too large a magneticpowder content may make it difficult to form a slurry for coating andhence, to form a substrate or prepreg. Too small a magnetic powdercontent may fail to provide the desired magnetic permeability,detracting from magnetic characteristics.

The flame retardant used in the flame retardant substrate according tothe fifth embodiment of the invention may be selected from a variety offlame retardants which are conventionally used in rendering substratesflame-proof. Exemplary flame retardants include halides such ashalogenated phosphates and brominated epoxy resins, organic compoundssuch as phosphate amides, and inorganic substances such as antimonytrioxide and aluminum hydride. Of these, halogenated phosphates andphosphate amides are preferred. Especially preferred are the halogenatedphosphates, typically the following one.

The polyvinylbenzyl ether compound and flame retardant are preferablymixed such that where the flame retardant is a halogenated phosphate,the weight ratio of polyvinylbenzyl ether compound to flame retardantmay range from 100:100 to 100:900 at the stage of a paste to be appliedto glass cloth. That is, the preferred content of halogenated phosphateis 40 to 60% by weight. A flame retardant content within this rangeensures the benefits of the invention. At too large a flame retardantcontent, the properties, especially electrical properties of the resinmay be exerted to a less extent. Too small a flame retardant content mayfail to provide flame retardance or to satisfy the UL-94 V-0 rating ofthe UL standard.

The additive type flame retardant used in the sixth embodiment includes(1) halogenated flame retardants, (2) phosphorus flame retardants, (3)nitrogenous flame retardants, (4) metal salt flame retardants, (5)hydrated metal flame retardants, and (6) inorganic flame retardants. Ofthese, the halogenated flame retardants are preferred from thestandpoint of dielectric properties, with brominated aromatic flameretardants being especially preferred for heat resistance and dielectricproperties.

Typical examples of suitable brominated aromatic flame retardantsinclude decabromodiphenyl oxide, octabromodiphenyl oxide,tetrabromobisphenol A, bis(tribromophenoxy)ethane, tetrabromobisphenol Aepoxy oligomers, ethylenebis(tetrabromophthalimide),ethylenebis(pentabromodiphenyl), tris(tribromophenoxy)triazine,tetrabromobisphenol A-bis(2,3-dibromopropyl ether),poly(dibromophenylene ether), brominated polystyrene, hexabromobenzene,tetrabromobisphenol S, octabromotrimethylphenylindane, and brominatedpolyphenylene oxide. A choice may be made among these depending on thedesired set of properties.

With respect to the heat resistance of electronic parts and circuitboards, a reflow resistance level of withstanding several (5 or 6)cycles of 260° C./10 sec at maximum and a solder dipping test level ofwithstanding 260 to 350° C./several seconds (10 to 3 seconds) arerequired from the standpoint of bonding with lead-free solder. The flameretardant must be unsusceptible to decomposition in this temperaturerange. Preferred examples of the flame retardant satisfying thisrequirement include decabromodiphenyl oxide, tetrabromobisphenol A epoxyoligomers, ethylenebis(tetrabromophthalimide),ethylenebis(pentabromodiphenyl), tris(tribromophenoxy)triazine,tribromoneopentyl alcohol, brominated polystyrene,octabromotrimethylphenylindane, and brominated polyphenylene oxide.

The amount of the brominated aromatic flame retardant blended may besuitably determined so as to meet the desired degree of flameretardance. Usually an appropriate amount of the brominated aromaticflame retardant blended is about 5 to 70% by weight based on thepolyvinylbenzyl ether compound. Outside the range, a less amount of theflame retardant may fail to achieve improvements in flame retardant anddielectric properties whereas a larger amount may detract from the goodphysical properties (e.g., flexural strength) of the polyvinylbenzylether compound in the cured state and invite a viscosity rise in forminga paste, making it difficult to form a paste.

In the case of circuit boards, for example, the amount of the brominatedaromatic flame retardant blended is preferably set to 20 to 50% byweight in order to clear the V-1 or V-0 rating of the UL-94 burningtest.

If desired, a mixture of two or more of the above-mentioned flameretardants is used.

A flame retardant adjuvant may be used in combination with the flameretardant. The flame retardant adjuvant used herein, which is sometimesclassified in the grouping of flame retardants, is a substance whichprovides a synergistic flame retardant effect when used in combinationwith a certain flame retardant. In the preferred embodiment wherein theflame retardants are brominated aromatic flame retardants, the preferredflame retardant adjuvants used herein are those compounds classified inthe grouping of inorganic flame retardants. Such inorganic flameretardants act as a dehydrating agent for the resin upon burning,contributing to carbide coating formation. Illustrative examples of theinorganic flame retardants are aluminum hydroxide, magnesium hydroxide;metal oxides such as silica, aluminum oxide, iron oxide, titanium oxide,manganese oxide, magnesium oxide, zirconium oxide, zinc oxide,molybdenum oxide, cobalt oxide, bismuth oxide, chromium oxide, tinoxide, antimony oxide, nickel oxide, copper oxide, and tungsten oxide;metal powders such as aluminum, iron, titanium, manganese, zinc,molybdenum, cobalt, bismuth, chromium, nickel, copper, tungsten, tin andantimony; zinc borate, zinc metaborate, barium metaborate, zinccarbonate, magnesium carbonate, calcium carbonate, and barium carbonate.

Of these, antimony trioxide, aluminum hydroxide and magnesium hydroxideare suitable since they exert a greater synergistic effect when combinedwith the flame retardant. As the material that clears theabove-mentioned heat resistance levels of reflow and solder dippingtests, antimony trioxide is best suited since it has high heatresistance due to a high melting point of 655° C., exerts a greatsynergistic flame retardant effect in cooperation with the brominatedaromatic flame retardant, and satisfies insulating and other necessaryproperties.

If desired, the flame retardant adjuvants are used in admixture of twoor more.

The inorganic flame retardant adjuvant is used in such amounts that thetotal amount of inorganic flame retardant adjuvant and brominatedaromatic flame retardant may be about 5 to 70% by weight based on theweight of the polyvinylbenzyl ether compound. A proper amount isdetermined in accordance with the desired degree of flame retardance. Ifthe total amount is below the range, little improvements are made inflame retardant and dielectric properties. If the total amount is abovethe range, the good physical properties of the polyvinylbenzyl ethercompound in the cured state are more or less lost and the step ofmilling into a paste becomes difficult.

In the case of circuit boards, for example, the total amount of theflame retardant and flame retardant adjuvant is preferably set to 20 to40% by weight in order to clear the V-1 or V-0 rating of the UL-94burning test.

The ratio of the inorganic flame retardant to the polyvinylbenzyl ethercompound blended is not critical and may be determined as appropriatefor a particular purpose. Most often, this ratio is in the range from5/95 to 95/5.

The flame retardant adjuvant may be surface treated for the purposes ofimproving dispersibility and the interfacial state with thepolyvinylbenzyl ether compound. For example, silane compounds (e.g.,chlorosilanes, alkoxysilanes, organic functional silanes, andsilazanes), titanate and aluminum coupling agents are used for surfacetreatment. The surface treatment may be effected by dry, wet andintegral blend methods, etc. A proper method may be selected inaccordance with the desired properties and the step and installationrequired therefor. Any of such surface treatment methods may beconducted in a well-known manner.

As compared with the additive type flame retardant used alone, the useof the additive type flame retardant in combination with the flameretardant adjuvant enables to maintain the flame retardant effectunchanged even when the content of the polyvinylbenzyl ether compound inthe inventive composition is increased.

The dielectric ceramic material providing the dielectric ceramic powderused in the eighth embodiment should preferably have a dielectricconstant (E) of 10 to 20,000 at 2 GHz and a dissipation factor (tan δ)of up to 0.05 at 2 GHz though not limited thereto. The lower limit ofdissipation factor is usually about 0.0001 though not critical.Preferred materials include titanium-barium-neodymium base ceramics,titanium-barium-tin base ceramics, lead-calcium base ceramics, titaniumdioxide (TiO₂ system) base ceramics, barium titanate base ceramics(including BaTiO₃—BaZrO₃, BaO—TiO₂—Nd₂O₃ and BaO—TiO₂—SnO₂ systems),lead titanate base ceramics, strontium titanate (SrTiO₃) base ceramics,calcium titanate (CaTiO₃) ceramics, bismuth titanate base ceramics,magnesium titanate (MgTiO₃) base ceramics, zirconium titanate baseceramics, zinc titanate base ceramics, and strontium zirconate baseceramics. Also included are CaWO₄ base ceramics, Ba(Mg,Nb)O₃ baseceramics, Ba(Mg,Ta)O₃ base ceramics, Ba(Co,Mg,Nb)O₃ base ceramics,Ba(Co,Mg,Ta)O₃ base ceramics, Sr(Zn,Nd)O₃ base ceramics, Ba(Zn,Nd)O₃base ceramics and Ba(Zn,Ta)O₃ base ceramics. They may be used alone orin admixture of two or more.

The titanium dioxide base ceramics include one consisting of titaniumdioxide and those ceramics containing minor amounts of additives inaddition to titanium dioxide, while they should maintain the crystallinestructure of titanium dioxide. The same applies to the remainingceramics. While the titanium dioxide is represented by TiO₂ and has avariety of crystalline structures, those titanium dioxide species havingthe rutile structure are used as the dielectric ceramic.

For uniform dispersion and mixing and high loading, the dielectricceramic powder or particles should preferably have a mean particle sizeof 0.1 to 100 μm, especially 0.1 to 10 μm. Too large a particle size mayinterfere with uniform dispersion and mixing in the polyvinylbenzylether compound and allow for substantial settlement in paste form,failing to form a uniform material. Too small a particle sizecorresponds to a greater surface area, which may increase the viscosityand thixotropy upon dispersion and mixing, obstructing high loading ofceramic particles.

In the composite dielectric material of the eighth embodiment, thecontent of dielectric ceramic powder is 5 to 65% by volume provided thatthe total of the polyvinylbenzyl ether compound and dielectric ceramicpowder is 100% by volume. This range of dielectric ceramic powdercontent leads to a higher dielectric constant and ensures effectivemixing and dispersion of the dielectric ceramic powder in thepolyvinylbenzyl ether compound. In contrast, if the content ofdielectric ceramic powder becomes larger, mixing and dispersion maybecome difficult and physical properties of the cured product maydeteriorate considerably. If the content of dielectric ceramic powder isless, the dielectric constant increases little, failing to achieve theadvantage of dielectric properties.

The coupling agents used herein include silane coupling agents, titanatecoupling agents, and aluminum coupling agents. The silane couplingagents are further divided into chlorosilane, alkoxysilane, organicfunctional and silazane coupling agents.

Those coupling agents having a pyrolysis initiation temperature of atleast 220° C. are preferred. For use in electronic parts and circuitboards, passage of several (5 or 6) reflow cycles of 260° C. at thehighest is often necessary for solder bonding. To meet this heatresistance requirement, a pyrolysis initiation temperature of at least250° C. is preferred. The upper limit of pyrolysis initiationtemperature is not critical although it is about 1,000° C. for commonlyused compounds.

Examples of alkoxysilane coupling agents include methyldiethoxysilane,trimethylmethoxysilane, dimethylethoxysilane, trimethylethoxysilane,dimethylvinylethoxysilane, dimethyldimethoxysilane,dimethylvinylmethoxysilane, dimethyldiethoxysilane,methylvinyldimethoxysilane, methyltrimethoxysilane,methylvinyldimethoxysilane, tetramethoxysilane, diphenyldimethoxysilane,methyltriethoxysilane, phenyltrimethoxysilane, tetraethoxysilane,phenyltriethoxysilane, and methyldimethoxysilane. Examples of organicfunctional silane coupling agents include γ-aminopropyltriethoxysilane,N-(β-aminoethyl)-γ-aminopropyltrimethoxysilane,γ-glycidoxypropyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane,and γ-mercaptoxytrimethoxysilane.

The coupling agents may be used alone or in admixture of two or more inaccordance with the desired properties.

The amount of coupling agent with which the dielectric powder is treatedmay be determined as appropriate in the range of 0.1 to 6% by weight.Best effects are achieved when the dielectric powder or filler istreated with such an amount of the coupling agent that a monomolecularfilm of coupling agent may be formed on the surface of dielectricparticles. The amount of the coupling agent is determined by thefollowing equation, for example.Amount of coupling agent added=[(weight of dielectric powder)×(specificsurface area of dielectric powder)]/(minimum coverage area of couplingagent)

Surface treatment may be carried out by any of the following fourmethods.

1) Dry method: While the dielectric powder is forcedly agitated in a Vblender, etc., the coupling agent (which may take the form of aqueoussolution) is sprayed with the aid of dry air or nitrogen gas.

2) Wet method: The dielectric powder is dispersed in water or solvent toform a slurry, to which the coupling agent (which may take the form ofaqueous solution) is added. After thorough agitation, the dispersion isheld for some time whereupon the precipitated dielectric powder isseparated and dried.

3) Spray method: The coupling agent (which may take the form of aqueoussolution) is sprayed over the dielectric powder immediately afterexiting from the furnace and remaining hot.

4) Integral blend method: Before or after the dielectric powder is addedto the polyvinylbenzyl ether compound, with stirring, the coupling agentis added to the blend directly, that is, without dilution.

As a result of surface treatment with the coupling agent, dielectricparticles are covered with a coating of the coupling agent. The partialpresence of uncovered dielectric particles is acceptable.

The electronic part according to the ninth embodiment of the inventionpreferably includes at least one first composite dielectric layer inwhich a dielectric powder having a dielectric constant of 20 to 10,000and a dissipation factor of 0.01 to 0.0001 is dispersed in apolyvinylbenzyl ether compound such that the first composite dielectriclayer as a whole may have a dielectric constant of 5 to 20 and adissipation factor of 0.0025 to 0.0075. This construction provides anadequate dielectric constant and a high Q, and hence, a reducedtransmission loss, and is especially suitable in forming electroniccircuits such as balun (balanced-and-unbalanced) transformers, antennasand power amplifiers.

In another preferred embodiment, the electronic part includes at leastone second composite dielectric layer in which a dielectric powderhaving a dielectric constant of 20 to 10,000 and a dielectricdissipation factor of 0.01 to 0.0001 is dispersed in the polyvinylbenzylether compound in an amount of 40 to 65% by volume such that the secondcomposite dielectric layer as a whole may have a dielectric constant of10 to 40 and a dielectric dissipation factor of 0.0075 to 0.025. Thisembodiment provides an adequate Q value and a high dielectric constant,and is suitable in forming such electronic circuits as capacitors, patchantennas, voltage controlled oscillators (VCO) and power amplifiers.

In a further preferred embodiment, the electronic part includes at leastone composite magnetic layer in which a magnetic powder is dispersed inthe polyvinylbenzyl ether compound in an amount of 25 to 65% by volumesuch that the composite magnetic layer as a whole may have a magneticpermeability of 3 to 20. This embodiment provides a low dielectricconstant while keeping an adequate magnetic permeability, allowing thepart to be used in the high-frequency region of at least 100 MHz, andespecially 100 MHz to 10 GHz. These features, combined with the contentof magnetic powder which can be increased, enable use as electronicparts utilizing magnetic characteristics and magnetic shields forelectronic parts.

It is only required that at least one layer selected from theabove-describes three types of constituent layers be included. Any ofthese layers are properly combined in accordance with the constructionand function of the intended electronic part.

The ceramic powder used herein, especially the ceramic powder in thefirst composite dielectric layer should have a high Q and a relativelyhigh dielectric constant. It preferably has a dielectric constant of 20to 10,000 and a dissipation factor of 0.01 to 0.0001 at 2 GHz, andfurther a Q of 250 to 50,000. This selection enables to obtain acomposite dielectric material having a high Q and dielectric constant.

The ceramic powder used herein may have a greater dielectric constantand Q in a high-frequency band than the resin serving as the dispersingmedium. It is acceptable to use a mixture of two or more ceramicpowders. The ceramic powder is contained in such amounts that the firstcomposite dielectric layer as a whole may have a dielectric constant of5 to 20 and a dissipation factor of 0.0025 to 0.0075.

The ceramic powder used herein may be selected from those described inconnection with the first embodiment. The preferred range, particle sizeand other parameters are also the same.

In the first composite dielectric layer containing a resin resultingfrom a polyvinylbenzyl ether compound and the ceramic powder as maincomponents, the content of ceramic powder is from 10% by volume to lessthan 70% by volume provided that the total of the resin and ceramicpowder is 100% by volume. Preferably, the content of ceramic powder is20 to 60% by volume. A ceramic powder content of 70 volt or more failsto form a consolidated body. Such a greater ceramic powder content canalso result in a substantial lowering of Q as compared with thecomposition having no ceramic powder added. At a content of less than 10volt, the ceramic powder fails to exert its effect.

By properly selecting the respective components within the above range,the first composite dielectric layer can have a greater dielectricconstant than that of the resin (resulting from a polyvinylbenzyl ethercompound) alone, that is, have a dielectric constant as desired and ahigh Q.

The ceramic powder used herein, especially the ceramic powder in thesecond composite dielectric layer should have a very high dielectricconstant. The ceramic powder should preferably have a dielectricconstant of 20 to 10,000 and a dielectric dissipation factor of 0.01 to0.0001 and further a Q of 250 to 50,000. By dispersing such ceramicpowder in the resin (resulting from a polyvinylbenzyl ether compound), acomposite dielectric material having a higher dielectric constant isobtainable.

Any desired ceramic powder may be used in the second compositedielectric layer as long as the second composite dielectric layer in itsentirety has a dielectric constant of 10 to 40 and a dielectricdissipation factor of 0.0075 to 0.025 in the high-frequency region,especially at 2 GHz. It is acceptable to use two or more ceramicpowders. The ceramic powder used herein may be selected from thosedescribed in connection with the second embodiment. The preferred range,particle size and other parameters are also the same.

In the second composite dielectric layer containing a resin resultingfrom a polyvinylbenzyl ether compound and the ceramic powder as maincomponents, the content of ceramic powder is from 40% by volume to lessthan 65% by volume, preferably 40 to 60% by volume, provided that thetotal of the resin and ceramic powder is 100% by volume.

The magnetic powder in the composite dielectric layer may be selectedfrom the ferrite and ferromagnetic metals described in connection withthe fourth embodiment. The preferred particle size and other parametersare also the same.

The magnetic powder and the polyvinylbenzyl ether compound are mixed insuch amounts that the composite magnetic layer as a whole may have amagnetic permeability of 3 to 20. It is preferred that at the stage of apaste to be applied to glass cloth, the content of magnetic powder be 25to 65% by volume, more preferably 50 to 90% by weight based on the resinand magnetic powder combined. A magnetic powder content within thisrange ensures that the composite magnetic layer as a whole has amagnetic permeability of 3 to 20, enhancing the benefits of theinvention. Too large a magnetic powder content may make it difficult toform a slurry for coating and hence, to form a substrate or prepreg. Toosmall a magnetic powder content may fail to provide the desired magneticpermeability, detracting from magnetic characteristics.

The flame retardant used herein may be selected from a variety of flameretardants which are conventionally used in rendering substratesflame-proof. Exemplary flame retardants include halides such ashalogenated phosphates and brominated epoxy resins, organic compoundssuch as phosphate amides, and inorganic substances such as antimonytrioxide and aluminum hydride. Of these, halogenated phosphates andphosphate amides are preferred, with the halogenated phosphates beingespecially preferred.

The polyvinylbenzyl ether compound and flame retardant are preferablymixed such that where the flame retardant is a halogenated phosphate,the weight ratio of polyvinylbenzyl ether compound to flame retardantmay range from 100:100 to 100:900 at the stage of a paste to be appliedto glass cloth. That is, the preferred content-of halogenated phosphateis 40 to 60% by weight. A flame retardant content within this rangeensures the benefits of the invention. At too large a flame retardantcontent, the properties, especially electrical properties of the resinmay be exerted to a less extent. Too small a flame retardant content mayfail to provide flame retardance or to satisfy the UL-94 V-0 rating ofthe UL standard.

The reinforcing fibers used herein, typically in the form of glasscloth, may be selected from a variety of known reinforcements dependingon a particular purpose and application. Commercially availablereinforcements may be used without further treatment. Exemplaryreinforcing fibers are E glass cloth (∈=7, tan δ=0.003 at 1 GHz), Dglass cloth (∈=4, tan δ=0.0013 at 1 GHz) and H glass cloth (∈=11, tanδ=0.003 at 1 GHz), from which a choice may be made depending on thedesired electrical characteristics. Reinforcing fibers may be subject tocoupling treatment in order to enhance interlayer adhesion. The glasscloth preferably has a thickness of up to 100 μm, more preferably 20 to60 μm, and a weight of up to 120 g/m², especially 20 to 70 g/m².

Preferably the polyvinylbenzyl ether compound and glass cloth are mixedin a weight ratio of from 4/1 to 1/1. A mixing ratio within this rangeensures to exert the desired effect. With a lower ratio or a smallercontent of the resin, the resulting composite material may lose adhesionto copper foil and form a less flat substrate. Inversely, with a higherratio or a larger content of the resin, the choice of glass cloth whichcan be used may become difficult and it may become difficult to ensurethe strength of a thin-wall substrate.

The metal foil used herein may be selected from metals having goodelectrical conductivity such as gold, silver, copper and aluminum. Ofthese, copper is especially preferred.

The metal foil may be formed by well-known methods such as electrolysisand rolling. Electrolytic foil is preferably used where it is desired toprovide a foil peel strength. Rolled foil which is least affected by theskin effect due to surface irregularities is preferably used wherehigh-frequency characteristics are important.

The metal foil preferably has a gage of about 8 to 70 μm, especiallyabout 12 to 35 μm.

The composite dielectric material is preferably prepared by thefollowing method. First, predetermined amounts of the ceramic powder andthe polyvinylbenzyl ether compound are mixed. Mixing may be dry mixingalthough it is desirable to fully mix the ingredients in an organicsolvent such as toluene or xylene using a ball mill or agitator.

The resulting slurry is dried at 90 to 120° C., obtaining a mass of theceramic powder/polyvinylbenzyl ether compound mixture. The mass isground into a powder of the ceramic powder/polyvinylbenzyl ethercompound mixture. For obtaining a powder from the slurry, a method usinga granulator such as a spray dryer may be used. The mixture powder mayhave a mean particle size of about 50 to 1,000 μm.

The mixture powder is press molded into a desired shape at about 100 to150° C. The molded body is then cured at about 100 to 200° C. for about30 to 180 minutes. Step curing is employed if necessary. Additivesincluding the curing agent may be incorporated upon curing.

Electrodes can be formed in various ways, for example, by sandwichingthe powder between metal foils such as copper foils, followed by presscuring. In another method, a metal foil such as copper foil are placedon one or both surfaces of a lamination pressed powder prior to completecure, followed by press curing. In a further method, a metal foil isattached to the powder by pressing for partial curing, followed by aseparate heat treatment to proceed curing. Alternatively, the powder islamination pressed and cured, following which electrodes are formed byevaporating, sputtering or electroless plating a metal or by applying aconductive resin paste.

In preparing the composite dielectric material, it is preferred to mixthe ceramic powder with the polyvinylbenzyl ether compound beforepolymerization or curing although the ceramic powder can be mixed afterpolymerization or curing. However, mixing of the ceramic powder aftercomplete curing is undesired.

Prepreg sheets are prepared by mixing the ceramic powder, magneticpowder and optional flame retardant with the polyvinylbenzyl ethercompound in a predetermined blend ratio, and milling the ingredients ina solvent into a slurry, followed by coating and drying to B stage. Thesolvent used herein for adjusting the viscosity of the paste for ease ofcoating is preferably a volatile solvent, especially a polar neutralsolvent. Milling may be effected by well-known techniques such as ballmilling and agitation. A prepreg sheet can be fabricated by coating thepaste onto a metal foil or impregnating glass cloth with the paste.

Drying of the prepreg sheet to B stage may be appropriately adjusteddepending on the contents of ceramic powder, magnetic powder, andoptional flame retardant. Typical drying conditions include 100 to 120°C. and 0.5 to 3 hours. After drying, the B stage prepreg sheetpreferably has a thickness of about 50 to 300 μm and can be adjusted toan optimum thickness depending on the intended application and requiredcharacteristics (including pattern width, precision and dc resistance).

The prepreg sheet can be fabricated by the method shown in FIGS. 94A to94D or FIGS. 95A to 95D. The method of FIGS. 94A to 94D is rathersuitable for mass manufacture whereas the method of FIGS. 95A to 95D iseasy to control the film thickness and relatively easy to adjust thecharacteristics. In the method of FIGS. 94A to 94D, as shown in FIG.94A, a glass cloth 2101 a wound in roll form is unraveled from the roll2101 a and carried into a coating tank 2110 via a guide roller 2111. Thecoating tank 2110 contains a slurry having the polyvinylbenzyl ethercompound, ceramic powder, magnetic powder and optional flame retardantdispersed in a solvent. As the glass cloth passes through the coatingtank 2110, it is immersed in the slurry so that it is coated with theslurry while interstices are filled therewith.

Past the coating tank 2110, the glass cloth is carried into a dryingfurnace 2120 via guide rollers 2112 a and 2112 b. In the drying furnace2120, the resin-impregnated glass cloth is dried at a predeterminedtemperature for a predetermined time whereby it is B-staged. Afterturning around a guide roller 2121, the glass cloth is wound on atake-up roll 2130.

The glass cloth is then cut into sections of a predetermined size. Asshown in FIG. 94B, there is obtained a prepreg sheet having the glasscloth 2101 sandwiched between the layers 2102 of the resin containingthe ceramic powder, magnetic powder and optional flame retardant.

Then as shown in FIG. 94C, metal foils 2103 such as copper foils areplaced on opposite surface of the prepreg sheet. Laminating press yieldsa double side metal foil-clad substrate as shown in FIG. 94D. Thelaminating press conditions include a temperature of 100 to 200° C. anda pressure of 9.8×10⁵ to 7.84×10⁶ Pa (10 to 80 kgf/cm²). Molding is donefor about 0.5 to 20 hours under such conditions. Laminating press may beeffected in plural stages under different conditions. Where the metalfoils are not attached, the sandwich structure of prepreg sheet may belamination pressed without placing metal foils thereon.

Next, the method of FIGS. 95A to 95D is described. As shown in FIG. 95A,a slurry 2102 a having the polyvinylbenzyl ether compound, ceramicpowder, magnetic powder and optional flame retardant dispersed in asolvent is coated onto a metal foil such as a copper foil by means of adoctor blade 2150 which can maintain a constant clearance.

The coated foil is then cut into sections of a predetermined size. Asshown in FIG. 95B, there is obtained a prepreg sheet in which the layer2102 of the resin containing the ceramic powder, magnetic powder andoptional flame retardant is disposed on one surface of the metal foil2103.

As shown in FIG. 95C, two such prepreg sheets (2102, 2103) are placed onopposite surfaces of a glass cloth 2101 such that the resin layers 2102face inside. Laminating press yields a double side metal foil-cladsubstrate as shown in FIG. 95D. The laminating press conditions may bethe same as above.

Besides the above-mentioned coating methods, the substrate or prepreg bywhich the electronic part is constructed may be prepared by anothermethod, for example, by milling the ingredients and molding the solidmixture. This method using the solid mixture is easy to provide athickness and suitable for forming relatively thick substrates orprepregs.

Milling must be effected above the melting point of the polyvinylbenzylether compound. Note that most polyvinylbenzyl ether compounds have amelting point of about 50 to 150° C. Milling may be effected bywell-known techniques using ball mills, agitators and kneaders. Asolvent may be used during the milling, if necessary. The mixture may bepelletized or powdered, if necessary.

The pelletized or powdered mixture is molded in a laminating press. Thelaminating press conditions include a temperature of 100 to 200° C., atime of 0.5 to 3 hours, and a pressure of 4.9×10⁵ to 7.84×10⁶ Pa (5 to80 kgf/cm²).

The prepreg sheet thus obtained generally has a thickness of about 0.05to 5 mm. The thickness of the prepreg sheet may be determined asappropriate depending on the desired plate thickness and the contents ofdielectric powder and magnetic powder.

As in the preceding methods, metal foils such as copper foils are placedon opposite surfaces of the resulting prepreg sheet, followed bylaminating press. This yields a double side metal foil-clad substrate.The laminating press conditions include a temperature of 100 to 200° C.and a pressure of 9.8×10⁵ to 7.84×10⁶ Pa (10 to 80 kgf/cm²). Laminatingpress is done for about 0.5 to 20 hours under such conditions.Laminating press may be effected in plural stages under differentconditions. Where the metal foils are not attached, the prepreg sheetmay be lamination pressed without placing metal foils thereon.

The thus obtained substrate or organic composite material serving as alaminating press material is improved in magnetic permeability andhigh-frequency characteristics of dielectric constant. It also hasimproved insulating properties to serve as an insulator. When it isprocessed into a copper foil-clad substrate, the bond strength of thesubstrate to the foil is high. It also has improved heat resistance astypified by solder heat resistance.

A copper foil-clad substrate can be formed by placing copper foils overthe prepreg, followed by laminating press. The copper foils used hereintypically have a thickness of about 12 to 35 μm. Such copper foil-cladsubstrates include double side patterned substrates and multilayersubstrates.

FIGS. 96 and 97 illustrate steps of an exemplary process of preparing adouble side patterned substrate. As shown in FIGS. 96 and 97, in step A,a prepreg sheet 2001 of a predetermined thickness is sandwiched betweena pair of copper (Cu) foils 2002 of a predetermined thickness andlamination press. In step B, through holes are drilled in the structure(only one through hole 2003 shown in FIG. 96). In step C, copper (Cu) isplated to the through hole 2003 to form a plating film 2004. Then instep D, both the copper foils 2002 are patterned to form conductorpatterns 2021. Thereafter, in step E, plating is effected for connectionto external terminals as shown in FIG. 96. The last-mentioned platingmay be Ni plating followed by Pd plating, or Ni plating followed by Auplating (plating may be either electrolytic or electroless-plating), orcarried out using a solder leveler.

FIGS. 98 and 99 illustrate steps of an exemplary process of preparing amultilayer substrate in which four layers are stacked. As shown in FIGS.98 and 99, in step A, a prepreg sheet 2001 of a predetermined thicknessis sandwiched between a pair of copper (Cu) foils 2002 of apredetermined thickness and lamination press. Then in step B, both thecopper foils 2002 are patterned to form conductor patterns 2021. In stepC, on each of opposite surfaces of the double side patterned substratethus obtained, a prepreg sheet 2001 of a predetermined thickness and acopper foil 2002 are placed, followed by simultaneous lamination press.In step D, through holes are drilled in the structure (only one throughhole 2003 shown in FIG. 98). In step E, copper (Cu) is plated to thethrough hole 2003 to form a plating film 2004. Then in step F, both theoutside copper foils 2002 are patterned to form conductor patterns 2021.Thereafter, in step G, plating is effected for connection to externalterminals as shown in FIG. 98. The last-mentioned plating may be Niplating followed by Pd plating, or Ni plating followed by Au plating(plating may be either electrolytic or electroless plating), or carriedout using a solder leveler.

The laminating press conditions include a temperature of 100 to 200° C.,a pressure of 9.8×10⁵ to 7.84×10⁶ Pa (10 to 80 kgf/cm²), and a time of0.5 to 20 hours.

The invention is not limited to the above-illustrated substrates, and asubstrate of any desired structure can be formed. For example, using asubstrate serving as a laminating press material, a copper foil-cladsubstrate and a prepreg, a multilayer structure can be formed while theprepreg serves as a bonding layer.

In the embodiment wherein a prepreg or a substrate serving as alaminating press material is bonded to a copper foil, a paste ofcomposite dielectric material or composite magnetic material obtained bymilling the ceramic powder, magnetic powder, optional flame retardantand polyvinylbenzyl ether compound in a high-boiling solvent such asbutylcarbitol acetate may be applied onto a patterned substrate by ascreen printing or similar technique. This procedure is effective forimproving characteristics.

Multilayer electronic parts to be described later can be fabricated bycombining the prepreg, copper foil-clad substrate and multilayersubstrate with a device design pattern and other constituent materials.

The electronic parts of the invention find use as capacitors, coils (orinductors), filters, etc. Alternatively, by combining these elementswith each other or with wiring patterns, amplifier devices or functionaldevices, the electronic parts can form antennas, and high-frequencyelectronic parts such as superposed modules for use in high-frequencyelectronic circuits such as RF modules (RF amplification stages),voltage controlled oscillators (VCO), and power amplifiers, as well asoptical pickups.

EXAMPLE

Examples of the invention are given below by way of illustration and notby way of limitation.

Example 1-1

First, a ceramic powder and a polyvinylbenzyl ether compound were mixedin accordance with a formulation as shown in Tables 3 and 4, thoroughlymilled in toluene and dried at 90 to 120° C. for about 2 hours. This wasground into a powder of the ceramic powder and polyvinylbenzyl ethercompound mixture, having a mean particle size of 50 to 1,000 μm. Thepowder was placed in a mold of 6.5 cm×5 cm and cured at 120 to 200° C.for 2 hours, obtaining the end composition.

The ceramic powders used were MgTiO₃ (mean particle size 5 μm),Ba₂(Ti,Sn)₉O₂, base (mean particle size 10 μm), Bi₂O₃—BaO—Nd₂O₃—TiO₂base (mean particle size 5 μm), CaTiO₃ (mean particle size 0.5 μm), andSrTiO₃ (mean particle size 0.5 μm) powders.

The polyvinylbenzyl ether compound (VB) used was of the formula (1)wherein R¹ is methyl, R² is benzyl, R³ is a mixture of hydrogen andvinylbenzyl in a molar ratio of 0:100, and n=3.

From each of the compositions, a rod sample of about 1.0 mm square byabout 6.5 mm long was formed and measured for dielectric constant at 2GHz by the cavity resonator perturbation method using a test system83620A/8757C by Hewlett Packard. The Q of the sample was alsodetermined.

The denseness was evaluated by observing whether or not a few waterdroplets penetrated into a molded sample within about 1 minute afterapplication. The sample into which water droplets did not readilypenetrate was regarded to be consolidated.

The results are shown in Tables 3 and 4. TABLE 3 Ceramic powder VBcontent content Dielectric Sample No. Ceramic powder (vol %) (vol %)constant Q Denseness  1. (comparison) — — 100 2.5 250 consolidated  2.MgTiO₃ 10 90 3.3 268 consolidated  3. MgTiO₃ 20 80 4.0 289 consolidated 4. MgTiO₃ 30 70 5.0 313 consolidated  5. MgTiO₃ 40 60 6.0 345consolidated  6. MgTiO₃ 50 50 7.2 385 consolidated  7. MgTiO₃ 60 40 8.7420 consolidated  8. MgTiO₃ 65 35 9.1 431 consolidated  9. (comparison)MgTiO₃ 70 30 8.5 367 not consolidated 10. Ba₂(Ti,Sn)₉O₂₀ base 10 90 4.0264 consolidated 11. Ba₂(Ti,Sn)₉O₂₀ base 20 80 4.7 279 consolidated 12.Ba₂(Ti,Sn)₉O₂₀ base 30 70 6.3 304 consolidated 13. Ba₂(Ti,Sn)₉O₂₀ base35 65 7.3 319 consolidated 14. Ba₂(Ti,Sn)₉O₂₀ base 40 60 8.2 329consolidated 15. Ba₂(Ti,Sn)₉O₂₀ base 45 55 9.3 344 consolidated 16.Ba₂(Ti,Sn)₉O₂₀ base 50 50 9.8 380 consolidated 17. Ba₂(Ti,Sn)₉O₂₀ base60 40 13.0 401 consolidated 18. Ba₂(Ti,Sn)₉O₂₀ base 65 35 15.0 426consolidated 19. (comparison) Ba₂(Ti,Sn)₉O₂₀ base 70 30 14.6 320 notconsolidated 20. Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 10 90 3.5 263 consolidated21. Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 20 80 6.0 287 consolidated 22.Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 25 75 7.1 295 consolidated 23.Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 30 70 8.5 302 consolidated 24.Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 35 65 9.9 313 consolidated 25.Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 40 60 11.4 332 consolidated

TABLE 4 Ceramic powder VB content content Dielectric Sample No. Ceramicpowder (vol %) (vol %) constant Q Denseness 26. Bi₂O₃—BaO—Nd₂O₃—TiO₂base 50 50 14.9 381 consolidated 27. Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 60 4019.6 408 consolidated 28. Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 65 35 17.7 334consolidated 29. (comparison) Bi₂O₃—BaO—Nd₂O₃—TiO₂ base 70 30 16.9 263not consolidated 30. CaTiO₃ 10 90 4.1 253 consolidated 31. CaTiO₃ 20 806.3 260 consolidated 32. CaTiO₃ 30 70 9.1 269 consolidated 33. CaTiO₃ 4060 13.7 278 consolidated 34. CaTiO₃ 50 50 19.2 279 consolidated 35.CaTiO₃ 60 40 28.7 261 consolidated 36. CaTiO₃ 65 35 25.8 251consolidated 37. (comparison) CaTiO₃ 70 30 24.4 198 not consolidated 38.SrTiO₃ 10 90 4.1 255 consolidated 39. SrTiO₃ 20 80 6.5 256 consolidated40. SrTiO₃ 30 70 9.4 260 consolidated 41. SrTiO₃ 40 60 14.1 263consolidated 42. SrTiO₃ 50 50 19.5 265 consolidated 43. SrTiO₃ 60 4031.9 268 consolidated 44. SrTiO₃ 65 35 36.0 254 consolidated 45.(comparison) SrTiO₃ 70 30 31.7 188 not consolidated

Example 1-2

Compositions were prepared as in Example 1-1 by mixing the ceramicpowder and the polyvinylbenzyl ether compound both used in Example 1-1in the following combination.

Ba₂(Ti,Sn)₉O₂₀ base ceramic powder (60 volt)+polyvinylbenzyl ethercompound (40 vol %) (the same as sample No. 17 in Example 1-1).

Bi₂O₃—BaO—Nd₂O₃—TiO₂ base ceramic powder (60 volt)+polyvinylbenzyl ethercompound (40 vol %) (the same as sample No. 27 in Example 1-1).

SrTiO₃ ceramic powder (60 vol %)+polyvinylbenzyl ether compound (40 vol%) (the same as sample No. 43 in Example 1-1).

These samples were measured for dielectric constant at a frequency of0.01 to 10 GHz, with the results being plotted in the graph of FIG. 1.The Q of the samples at a frequency of 1 to 10 GHz is shown in FIG. 2.These measurements were the same as in Example 1-1. A dielectricconstant at a frequency of less than 100 MHz (0.1 GHz) was measuredusing an impedance/material analyzer 4291A by Hewlett Packard. Thesample for measurement at a frequency of less than 100 MHz was preparedby press molding the mixture powder at 100 to 150° C. into a plate,attaching copper foils of 18 μm thick to opposite surfaces of the plate,pressing at 100 to 200° C. for curing, and cutting into a section of 5mm square.

It is seen from FIGS. 1 and 2 that the compositions shows a relativelyhigh dielectric constant and a relatively high Q even in thehigh-frequency band of higher than 1 GHz. It is also seen that aspecific composition can be selected for a particular set ofcharacteristics.

Example 2-1

First, a ceramic powder and a polyvinylbenzyl ether compound were mixedin accordance with a formulation as shown in Table 5, thoroughly milledin toluene and dried at 90 to 120° C. for about 2 hours. This was groundinto a powder of the ceramic powder and polyvinylbenzyl ether compoundmixture, having a mean particle size of 50 to 1,000 pn. The mixturepowder was placed in a mold of 6.5 cm×5 cm and cured at 120 to 200° C.for 2 hours, obtaining the end composition.

The ceramic powders used were BaTiO₃ (mean particle size 0.5 μm) andBa(Ti,Zr)O₃ base (mean particle size 5 μm) powders.

The polyvinylbenzyl ether compound (VB) used was of the formula (1)wherein R¹ is methyl, R² is benzyl, R³ is a mixture of hydrogen andvinylbenzyl in a molar ratio of 0:100, and n=3.

From each of the compositions, a rod sample of about 1.0 mm square byabout 6.5 mm long was formed and measured for dielectric constant at 2GHz by the cavity resonator perturbation method using a test system83620A/8757C by Hewlett Packard.

The denseness was evaluated by observing whether or not a few waterdroplets penetrated into a molded sample within about 1 minute afterapplication. The sample into which water droplets did not readilypenetrate was regarded to be consolidated.

The results are shown in Table 5. TABLE 5 Ceramic powder VB contentDielectric Sample No. Ceramic powder content (vol %) (vol %) constantDenseness 201(comparison) — — 100 2.5 consolidated 202 BaTiO₃ 30 70 10.4consolidated 203 BaTiO₃ 40 60 15.0 consolidated 204 BaTiO₃ 45 55 16.6consolidated 205 BaTiO₃ 50 50 20.5 consolidated 206 BaTiO₃ 60 40 35.1consolidated 207 BaTiO₃ 65 35 47.0 consolidated 208(comparison) BaTiO₃70 30 Unmeasurable not consolidated 209 Ba(Ti,Zr)O₃ base 30 70 11.2consolidated 210 Ba(Ti,Zr)O₃ base 40 60 16.0 consolidated 211Ba(Ti,Zr)O₃ base 45 55 19.0 consolidated 212 Ba(Ti,Zr)O₃ base 50 50 22.5consolidated 213 Ba(Ti,Zr)O₃ base 60 40 39.2 consolidated 214Ba(Ti,Zr)O₃ base 65 35 48.7 consolidated 215(comparison) Ba(Ti,Zr)O₃base 70 30 42.2 not consolidated

Example 2-2

Compositions were prepared as in Example 2-1 by mixing the ceramicpowder and the polyvinylbenzyl ether compound both used in Example 2-1in the following combination.

Ba(Ti,Zr)O₃ base ceramic powder (60 vol %)+polyvinylbenzyl ethercompound (40 vol %) (the same as sample No. 213 in Example 2-1).

BaTiO₃ ceramic powder (60 vol %)+polyvinylbenzyl ether compound (40volt) (the same as sample No. 206 in Example 2-1).

These samples were measured for dielectric constant at a frequency of0.01 to 10 GHz, with the results being plotted in the graph of FIG. 3.The measurement was the same as in Example 2-1. A dielectric constant ata frequency of less than 100 MHz (0.1 GHz) was measured using animpedance/material analyzer 4291A by Hewlett Packard. The sample formeasurement at a frequency of less than 100 MHz was prepared by pressmolding the mixture powder at 100 to 150° C. into a plate, attachingcopper foils of 18 μm thick to opposite surfaces of the plate, pressingat 100 to 200° C. for curing, and cutting into a section of 5 mm square.

It is seen from FIG. 3 that the compositions show a relatively highdielectric constant even in the high-frequency band of higher than 1GHz. It is also seen that a specific composition can be selected for aparticular set of characteristics.

Example 3-1

A polyvinylbenzyl ether compound was dissolved in toluene so as to forma 55 wt % solution. A dielectric ceramic powder was added to thesolution, which was milled for 24 hours in a ball mill. Thepolyvinylbenzyl ether compound (VB) used was of the formula (1) whereinR¹ is methyl, R² is benzyl, R³ is a mixture of hydrogen and vinylbenzylin a molar ratio of 0:100, and n=3. The dielectric ceramic powder usedwas BaO—TiO₂—Nd₂O₃ base ceramic having a dielectric constant ∈ of 95 anda mean particle size of 5 μm. The content of the ceramic powder was 50,55, 60, 65 and 70% by volume provided that the total of ceramic powderand VB was 100% by volume. The slurry was applied to a glass cloth of 50μm thick (by Asahi Schwebel K.K.) by means of a suitable coater, anddried at 110° C. for 2 hours, obtaining a prepreg. After drying, theprepreg was 150 μm thick. A substrate was formed by stacking twelveprepreg sheets and press molding the stack. The press molding under apressure of 2.0×10⁶ Pa included three consecutive stages of 150° C. for30 minutes, 180° C. for 30 minutes, and 200° C. for 30 minutes. Theresulting substrate was 1.6 mm thick. Sample Nos. 301 to 305 wereobtained in this way.

For comparison purposes, a phenol novolac type epoxy resin and adielectric ceramic powder were dissolved in methyl ethyl ketone (MEK),which was milled for 24 hours in a ball mill to form a slurry. Thedielectric ceramic powder used was BaO—TiO₂—Nd₂O₃ base ceramic having adielectric constant ∈ of 95 and a mean particle size of 5 μm. Thecontent of the ceramic powder was 50% by volume of the mixture. Theslurry was applied to a glass cloth of 50 μm thick (by Asahi SchwebelK.K.) by means of a suitable coater, and dried at 120° C. for 20minutes, obtaining a prepreg. A substrate was formed by stacking twelveprepreg sheets and press molding the stack. The press molding under apressure of 2.9×10⁶ Pa included two consecutive stages of 110° C. for 30minutes and 180° C. for 60 minutes. This is designated sample No. 306.

The substrates (sample Nos. 301 to 306) were cut into specimens of 100mm×2 mm×1.6 mm thick. They were measured for dielectric constant anddissipation factor at 1 GHz by the perturbation method, from which Q wascomputed. The dielectric constant and Q are shown in Table 6. TABLE 6Dielectric content Dielectric Sample No. Resin Dielectric (vol %)constant Q Remarks 301 VB BaO—TiO₂—Nd₂O₃ 50 11.7 365 302 VBBaO—TiO₂—Nd₂O₃ 55 13.92 395 303 VB BaO—TiO₂—Nd₂O₃ 60 14.7 457 304 VBBaO—TiO₂—Nd₂O₃ 65 15 446 305(comparison) VB BaO—TiO₂—Nd₂O₃ 70 14.3 351rejected because of separation between prepreg sheets 306(comparison)epoxy BaO—TiO₂—Nd₂O₃ 50 15.7 61

For the application where a high dielectric constant and high Q arerequired, the samples within the invention are inferior in dielectricconstant to the epoxy resin sample, but superior in Q due to the lowdissipation factor of the base resin. The maintenance of a high Q at 1GHz indicates the possible use in the high-frequency region.

Example 3-2

The polyvinylbenzyl ether compound (VB) used in Example 3-1 wasdissolved in toluene so as to form a 55 wt % solution. A dielectricceramic powder was added to the solution, which was milled for 24 hoursin a ball mill. The dielectric ceramic powder used was BaTiO₃—BaZrO₃base ceramic having a dielectric constant ∈ of 9,000 and a mean particlesize of 1 μm. The content of the ceramic powder was 40, 50, 60, 65 and70% by volume provided that the total of ceramic powder and VB was 100%by volume. The slurry was dried at 90° C. for 15 hours, obtaining a massof the mixture. It was ground in a mortar, obtaining a powder of themixture. An amount of the mixture powder was placed in a mold and pressmolded at 110° C. and 2.9×10⁶ Pa for 2 hours into a plate of 1.6 mmthick. The plate was further molded at 180° C. and 2.9×10⁶ Pa for 2hours, obtaining a substrate. Sample Nos. 307 to 311 were obtained inthis way.

For comparison purposes, a phenol novolac type epoxy resin and theBaTiO₃—BaZrO₃ base dielectric ceramic powder (dielectric constant ∈9,000 and mean particle size 1 μm) were dissolved in MEK, which wasmilled for 24 hours in a ball mill to form a slurry. The content of theceramic powder was 50% by volume of the mixture. The slurry was dried at50° C. for 10 hours, obtaining a mass of the mixture. It was ground in amortar, obtaining a powder of the mixture. An amount of the mixturepowder was placed in a mold and press molded at 120° C. and 2.9×10⁶ Pafor 20 minutes into a plate of 1.6 mm thick. The plate was further curedunder a pressure of 2.9×10⁶ Pa in two steps of 110° C. for 30 minutesand 180° C. for 30 minutes, obtaining a substrate. This is designatedsample No. 312.

The substrates (sample Nos. 307 to 312) were cut into specimens of 100mm×2 mm×1.6 mm thick. They were measured for dielectric constant anddissipation factor at 1 GHz by the perturbation method, from which Q wascomputed. The dielectric constant and Q are shown in Table 7. TABLE 7Dielectric Dielectric Sample No. Resin Dielectric content (vol %)constant Q Remarks 307 VB BaTiO₃—BaZrO₃ 40 16.5 135 308 VB BaTiO₃—BaZrO₃50 22.7 105 309 VB BaTiO₃—BaZrO₃ 60 40 69 310 VB BaTiO₃—BaZrO₃ 65 31.945 311(comparison) VB BaTiO₃—BaZrO₃ 70 30.5 30 molded item is notconsolidated 312(comparison) epoxy BaTiO₃—BaZrO₃ 50 20.5 62

The samples within the invention are approximately equal in dielectricconstant to the epoxy resin sample, but superior in Q due to the lowdissipation factor of the base resin. The inventive samples are thussuited in the application where a relatively high dielectric constantand a not so high Q are required in the high-frequency region. When thesamples having the same ceramic powder content are compared, theinventive sample has a higher Q than the epoxy resin sample.

Example 3-3

The polyvinylbenzyl ether compound (VB) used in Example 3-1 wasdissolved in toluene so as to form a 55 wt % solution. A dielectricceramic powder was added to the solution, which was milled for 24 hoursin a ball mill. The dielectric ceramic powder used was BaO-4TiO₂ baseceramic having a dielectric constant ∈ of 45 and a mean particle size of1 μm. The content of the ceramic powder was 10, 30, and 50% by volumeprovided that the total of ceramic powder and VB was 100% by volume. Theslurry was dried at 90° C. for 15 hours, obtaining a mass of themixture. It was ground in a mortar, obtaining a powder of the mixture.An amount of the mixture powder was placed in a mold and press molded at110° C. and 2.9×10⁶ Pa for 2 hours into a plate of 1.6 mm thick. Theplate was further molded at 180° C. and 2.9×10⁶ Pa for 2 hours,obtaining a substrate. Sample Nos. 313 to 315 were obtained in this way.

For comparison purposes, a phenol novolac type epoxy resin and theBaO-4TiO₂ base dielectric ceramic powder (dielectric constant ∈ 45 andmean particle size 1 μm) were dissolved in MEK, which was milled for 24hours in a ball mill to form a slurry. The content of the ceramic powderwas 30% by volume of the mixture. The slurry was dried at 50° C. for 10hours, obtaining a mass of the mixture. It was ground in a mortar,obtaining a powder of the mixture. An amount of the mixture powder wasplaced in a mold and press molded at 120° C. and 2.9×10⁶ Pa for 20minutes into a plate of 1.6 mm thick. The plate was further cured undera pressure of 2.9×10⁶ Pa in two steps of 110° C. for 30 minutes and 180°C. for 30 minutes, obtaining a substrate. This is designated sample No.316.

The substrates (sample Nos. 313 to 316) were cut into specimens of 100mm×2 mm×1.6 mm thick. They were measured for dielectric constant anddissipation factor at 1 GHz by the perturbation method, from which Q wascomputed. The dielectric constant and Q are shown in Table 8. TABLE 8Dielectric content Dielectric Sample No. Resin Dielectric (vol %)constant Q 313 VB BaO—4TiO₂ 10 4 270 314 VB BaO—4TiO₂ 30 6.5 309 315 VBBaO—4TiO₂ 50 10.1 385 316(comparison) epoxy BaO—4TiO₂ 30 8.4 62

For the application where a not so high dielectric constant and a high Qare required, the samples within the invention are equal in dielectricconstant to the epoxy resin sample, but superior in Q due to the lowdissipation factor of the base resin. The maintenance of a high Q at 1GHz indicates the possible use in the high-frequency region.

Example 4-1 Ferrite Composite Magnetic Material

The magnetic powder used was Mn—Mg—Zn base ferrite powder having amagnetic permeability μ of 320 and a mean particle size of 3 μm. Theferrite powder and a polyvinylbenzyl ether compound (VB) were dissolvedin toluene and milled in a ball mill to form a slurry. The content ofthe ferrite powder was 65% and 80% by weight based on the VB.

The slurry was applied onto an electrolytic copper foil of 35 μm thickby means of a doctor blade, and dried at 110° C. for 2 hours, obtaininga prepreg. The composite magnetic material coating had a thickness of150 μm at the end of drying.

There was furnished a glass cloth having a thickness of 38 μm and aweight of 24.8 g/m² (cloth No. 106, by Arisawa Mfg. K.K.). The prepregsheets were placed on opposite surfaces of the glass cloth such that themetal sides were outside, and lamination pressed under a pressure of3.43×10⁶ Pa (35 kgf/cm²) at 120° C. for 30 minutes, at 150° C. for 30minutes, then at 180° C. for 30 minutes, and finally at 200° C. for 30minutes. There was obtained a double side metal foil-clad substratehaving a thickness of 0.30 mm.

The substrate was measured for a dielectric constant at 1 MHz and 100MHz, dissipation factor at 100 MHz, volume resistivity and frequencyresponse of magnetic permeability, with the results shown in FIGS. 4 to8.

Comparative Example 4-1

In Example 4-1, a phenol novolac type epoxy resin was used instead ofthe polyvinylbenzyl ether compound (VB) and methyl ethyl ketone (MEK)was used as the solvent. The content of the ferrite powder was 65% and80% by weight based on the epoxy resin. Otherwise by the same procedureas in Example 4-1, a slurry was prepared.

The slurry was applied onto an electrolytic copper foil of 35 μm thickby means of a doctor blade, and dried at 120° C. for 20 minutes,obtaining a prepreg. The composite magnetic material coating had athickness of 150 μm at the end of drying.

There was furnished a glass cloth having a thickness of 38 μm and aweight of 24.8 g/m² (cloth No. 106, by Arisawa Mfg. K.K.). The prepregsheets were placed on opposite surfaces of the glass cloth such that themetal sides were outside, and lamination pressed under a pressure of3.92×10⁶ Pa (40 kgf/cm²) at 110° C. for 30 minutes, then at 180° C. for60 minutes. There was obtained a double side metal foil-clad substratehaving a thickness of 0.30 mm.

The substrate was measured for a dielectric constant at 1 MHz and 100MHz, dissipation factor at 100 MHz, volume resistivity and frequencyresponse of magnetic permeability, with the results shown in FIGS. 4 to8.

It is evident from FIGS. 4 to 8 that the inventive samples show a 20 to25% reduction of dielectric constant and a lower dissipation factor,probably because of the dielectric constant and dissipation factor ofthe VB as the base. The volume resistivity is at least equal to that ofthe epoxy resin sample. The magnetic permeability values are somewhatdifferent because the content is expressed in % by weight. If thecontent is converted to % by volume, then the magnetic permeabilityvalues become very close. The frequency response of permeability curveshows the advantage of the composite magnetic material that the realpart of magnetic permeability is maintained to the gigahertz band andthe imaginary part of magnetic permeability has a peak in proximity to 1GHz, which indicates the possible use in the high-frequency region asopposed to ferrite in bulk form.

Example 4-2 Ferromagnetic Metal Base Composite Magnetic Material

A slurry paste was prepared as in Example 4-1 except that flat Fe—Si—Crbase particles having a length of 50 μm and a thickness of 0.2-0.3 μmwas used as the magnetic material. The content of the metal powder was50% and 70% by weight.

The slurry was applied onto an electrolytic copper foil of 35 μm thickby means of a doctor blade, and dried at 110° C. for 2 hours, obtaininga prepreg. The composite magnetic material coating had a thickness of150 μm at the end of drying.

There was furnished a glass cloth having a thickness of 38 μm and aweight of 24.8 g/m² (cloth No. 106, by Arisawa Mfg. K.K.). The prepregsheets were placed on opposite surfaces of the glass cloth such that themetal sides were outside, and lamination pressed under a pressure of3.43×10⁶ Pa (35 kgf/cm²) at 120° C. for 30 minutes, at 150° C. for 30minutes, then at 180° C. for 30 minutes, and finally at 200° C. for 30minutes. There was obtained a double side metal foil-clad substratehaving a thickness of 0.30 mm.

The substrate was measured for magnetic permeability, dielectricconstant at 100 MHz and frequency response of magnetic permeability,with the results shown in FIGS. 9, 10 and 11.

Comparative Example 4-2 Ferromagnetic Metal Base Composite MagneticMaterial

In Example 4-2, a phenol novolac type epoxy resin was used instead ofthe polyvinylbenzyl ether compound (VB) and methyl ethyl ketone (MEK)was used as the solvent. The content of the metal powder was 50% and 70%by weight based on the epoxy resin. Otherwise by the same procedure asin Example 4-2, a slurry was prepared.

The slurry was applied onto an electrolytic copper foil of 35 μm thickby means of a doctor blade, and dried at 120° C. for 20 minutes,obtaining a prepreg. The composite magnetic material coating had athickness of 150 μm at the end of drying.

There was furnished a glass cloth having a thickness of 38 μm and aweight of 24.8 g/m² (cloth No. 106, by Arisawa Mfg. K.K.). The prepregsheets were placed on opposite surfaces of the glass cloth such that themetal sides were outside, and lamination pressed under a pressure of3.92×10⁶ Pa (40 kgf/cm²) at 110° C. for 30 minutes, then at 180° C. for60 minutes. There was obtained a double side metal foil-clad substratehaving a thickness of 0.30 mm.

The substrate was measured for magnetic permeability, dielectricconstant at 100 MHz and frequency response of magnetic permeability,with the results shown in FIGS. 9, 10 and 11.

It is evident from FIGS. 9 to 11 that as compared with the ferritepowder sample in Example 4-1, the samples of Example 4-2 show a 30 to45% reduction of dielectric constant. This is probably because the metalpowder has a greater dielectric constant than ferrite and a flattenedshape so that the dielectric constant manifests in a nearly seriesconnection manner. In the composite material coating formed by means ofa doctor blade or the like, metal particles are aligned in a direction,the proportion of the base resin becomes higher in the direction ofalignment and its dielectric constant becomes more dominant. Therefore,at the same content, the use of metal powder gives a lower dielectricconstant than the use of ferrite powder.

Example 4-3 Ferrite Composite Magnetic Material

The magnetic powder used was Mn—Mg—Zn base ferrite powder having amagnetic permeability μ of 320 and a mean particle size of 3 μm. Theferrite powder and a polyvinylbenzyl ether compound (VB) were dissolvedin toluene and milled to form a slurry. The slurry was dried at 90° C.for 15 hours, obtaining a mass of the mixture. It was ground in apulverizer, obtaining a powder mixture of the magnetic powder and VB.The content of the ferrite powder was 65% and 80% by weight based on theVB.

An amount of the mixture powder was placed in a mold and press molded at120° C. and 2.94×10⁶ Pa (30 kgf/cm²) for 30 minutes into a prepreg sheetof 1 mm thick.

Copper foils of 18 μm thick were placed on opposite surfaces of theprepreg sheet, which was lamination pressed under a pressure of 3.43×10⁶Pa (35 kgf/cm²) by step curing at 120° C. for 30 minutes, 150° C. for 30minutes, then 180° C. for 30 minutes, and finally at 200° C. for 30minutes. There was obtained a double side copper foil-clad substrate of1.02 mm thick.

The samples thus obtained were measured for dielectric constant at 1MHz, with the results shown in FIG. 12.

Comparative Example 4-3

In Example 4-3, a phenol novolac type epoxy resin was used instead ofthe polyvinylbenzyl ether compound (VB) and methyl ethyl ketone (MEK)was used as the solvent. The content of the ferrite powder was 65% and80% by weight based on the epoxy resin. Otherwise by the same procedureas in Example 4-3, a mixture powder was prepared.

An amount of the mixture powder was placed in a mold and laminationpressed at 120° C. and 2.94×10⁶ Pa (30 kgf/cm²) for 30 minutes into aprepreg sheet of 1 mm thick.

Copper foils of 18 μm thick were placed on opposite surfaces of theprepreg sheet, which was lamination pressed under a pressure of 3.43×10⁶Pa (35 kgf/cm²) by step curing at 120° C. for 30 minutes, 150° C. for 30minutes, then 180° C. for 30 minutes, and finally at 200° C. for 30minutes. There was obtained a double side copper foil-clad substrate of1.02 mm thick.

The samples thus obtained were measured for dielectric constant at 1MHz, with the results shown in FIG. 12.

It is seen from FIG. 12 that as compared with the epoxy resin samples,the inventive samples show a 20 to 25% reduction of dielectric constant,probably because of the dielectric constant of the base resin. As inExample 4-1, the samples of Example 4-3 and Comparative Example 4-3 werealso measured for magnetic properties, obtaining approximately the sameresults as in Example 4-1 and Comparative Example 4-1.

Example 4-4 Coil Using Ferrite Composite Magnetic Material

Using the samples (double side copper foil-clad substrates) prepared inExample 4-1 and Comparative Example 4-1, a 3.2×1.6 mm array of fourjuxtaposed coils was fabricated to a configuration as shown in FIGS. 13Ato 13C. FIG. 13A is a plan view, FIG. 13B is a rear view, and FIG. 13Cis a plan view after resin coating. In FIGS. 13A to 13C, a printedpattern 92 is formed on a substrate body 91 and coated with a base resin93.

After a double side patterned substrate was formed, a paste of thecomposite magnetic material containing 65 wt % of the ferrite powder inExample 4-1 or Comparative Example 4-1 was screen printed as a baseresin and heat cured to form coils. The coils thus formed had athickness of 70 μm while the product has a height of 0.44 mm. Thefrequency response of the coil was measured, with the results shown inFIG. 14.

As seen from FIG. 14, the frequency response of impedance (the uppersolid curves in the graph) and the frequency response of reactance (thelower broken line curve in the graph) of the vinylbenzyl sample showpeaks which are expanded toward the higher frequency side by about 400MHz. This is because the substrate material has a low dielectricconstant so that the coil has a lower stray capacity. In fabricatingcoils so as to take more advantage of magnetic characteristics, thereare achieved dielectric characteristics that allow for full utilizationof the high-frequency characteristics of a composite material.

Example 5-1 Coating to Reinforcing Fibers

A polyvinylbenzyl ether compound was dissolved in toluene to aconcentration of 55% by weight. A halogenated phosphate flame retardant(CR900 by Daihachi Chemical K.K.) was added to the resin solution, whichwas milled for 24 hours in a ball mill. There were prepared sampleslurries having mixed therein 10%, 20%, 30%, 40%, 50%, 60% and 70% byweight of the flame retardant. A control slurry free of the flameretardant was also prepared.

Each slurry was applied to a glass cloth of 50 μm thick (by AsahiSchwebel K.K.) by means of a suitable coater, and dried at 110° C. for 2hours, obtaining a flame retardant prepreg. After drying, the prepregwas 150 μm thick.

A substrate was formed by stacking twelve prepreg sheets and pressmolding the stack. The laminating press under a pressure of 1.96×10⁶ Pa(20 kgf/cm²) included three consecutive stages of 150° C. for 30minutes, 180° C. for 30 minutes, and 200° C. for 30 minutes. Theresulting flame retardant substrate was 1.6 mm thick.

These substrate samples were tested. In a flame retardant test, aspecimen of 127 mm×12.7 mm×1.6 mm thick was cut out of each substrateand tested in accordance with the UL-94 standard. After a pressurecooker test (PCT) at 121° C. and 2 atm. for 50 hours, a volumeresistivity was measured in accordance with JIS C-6481. As to electricproperties, a specimen of 100 mm×1.5 mm×1.6 mm thick was cut out of eachsubstrate and measured for dielectric constant (E) and dissipationfactor at 1 GHz by the perturbation method, from which a Q value wascomputed. The results are shown in Table 9. TABLE 9 Flame Volume Sampleretardant resistivity No. (wt %) UL-94 ε Q (Ω-cm) 501*  0* HB 3.20 22010¹⁴ 502* 10* HB 3.21 220 10¹⁴ 503* 20* HB 3.22 222 10¹⁴ 504* 30* HB3.28 223 10¹⁴ 505 40 V-0 3.32 230 10¹⁴ 506 50 V-0 3.40 220 10¹⁴ 507 60V-0 3.45 200 10¹³ 508* 70* V-0 3.49 152 10⁷HB: clears HB, but not V-0 of UL-94.V0: clears V-0 of UL-94The asterisk (*) indicates outside the range of the invention or thepreferred range of the invention.

As seen from Table 9, those samples containing 30% by weight or less ofthe flame retardant fail to satisfy the UL-94 V-0 rating. Those samplescontaining at least 40% by weight of the flame retardant satisfy theUL-94 V-0 rating, but the sample containing 70% by weight of the flameretardant shows an extreme drop of volume resistivity in the PCT test.

Example 5-2 Compression Molding of Solid Powder

A polyvinylbenzyl ether compound was dissolved in toluene to aconcentration of 55% by weight. A halogenated phosphate flame retardant(CR900 by Daihachi Chemical K.K.) was added to the resin solution, whichwas milled for 24 hours in a ball mill. There were prepared sampleslurries having mixed therein 10%, 20%, 30%, 40%, 50%, 60% and 70% byweight of the flame retardant. A control slurry free of the flameretardant was also prepared.

The slurry was dried at 90° C. for 15 hours, obtaining a solid mass ofthe resin/flame retardant mixture. It was ground in a mortar, obtaininga powder of the mixture. An amount of the mixture powder was placed in amold and press molded at 120° C. and 2.94×10⁶ Pa (30 kgf/cm²) for 20minutes into a prepreg plate of 1.8 mm thick. The plate was furtherlamination pressed under a pressure of 2.94×10⁶ Pa (30 kgf/cm²) by stepcuring at. 110° C. for 30 minutes and at 180° C. for 30 minutes,obtaining a flame retardant substrate of 1.6 mm thick.

The thus obtained substrate samples were tested. In a flame retardanttest, a specimen of 127 mm×12.7 mm×1.6 mm thick was cut out of eachsubstrate and tested in accordance with the UL-94 standard. After a PCTat 121° C. and 2 atm. for 50 hours, a volume resistivity was measured inaccordance with JIS C-6481. As to electric properties, a specimen of 100mm×1.5 mm×1.6 mm thick was cut out of each substrate and measured fordielectric constant (∈) and dissipation factor at 1 GHz by theperturbation method, from which a Q value was computed. The results areshown in Table 10. TABLE 10 Flame Volume Sample retardant resistivityNo. (wt %) UL-94 ε Q (Ω-cm) 511*  0* HB 2.65 260 10¹⁴ 512* 10* HB 2.67261 10¹⁴ 513* 20* HB 2.66 259 10¹⁴ 514* 30* HB 2.72 260 10¹⁴ 515 40 V-02.81 257 10¹⁴ 516 50 V-0 2.86 262 10¹⁴ 517 60 V-0 2.91 241 10¹³ 518* 70*V-0 2.99 198 10⁷HB: clears HB, but not V-0 of UL-94.V0: clears V-0 of UL-94The asterisk (*) indicates outside the range of the invention or thepreferred range of the invention.

As seen from Table 10, those samples containing 30% by weight or less ofthe flame retardant fail to satisfy the UL-94 V-0 rating. Those samplescontaining at least 40% by weight of the flame retardant satisfy theUL-94 V-0 rating, but the sample containing 70% by weight of the flameretardant shows an extreme drop of volume resistivity in the PCT test.As compared with the sample on glass cloth in Example 5-1, the samplesof this example have a somewhat lower dielectric constant and a somewhathigher Q value. This is because the electrical properties of glass clothhave an influence on the prepreg.

Example 6-1

In a common vessel, 55 g of a polyvinylbenzyl ether compound and 45 g oftoluene were agitated until the compound was completely dissolved,obtaining a solution containing 55% by weight of solids. Thepolyvinylbenzyl ether compound (VB) used was of the formula (1) whereinR¹ is methyl, R² is a mixture of C₁₋₁₀ alkyl groups (inclusive ofaralkyl groups such as benzyl), R³ is a mixture of hydrogen andvinylbenzyl in a molar ratio of 0:100, and n=3.

A slurry was prepared by mixing the 55% solution, an additive type flameretardant and a flame retardant adjuvant in a formulation as shown inTable 11, and agitating them until a uniform dispersion free ofagglomeration was obtained.

Specifically, a slurry corresponding to sample No. 602 was prepared bymixing 100 g of a 55 wt % toluene solution of the polyvinylbenzyl ethercompound with 13.75 g of additive type flame retardant Cytech BT-93(ethylenebis(tetrabromophthalimide), by Albemare). Glass cloth (Type1080, Asahi Schwebel K.K.) was coated and impregnated with the slurry,which was cured at 110° C. for 2 hours, obtaining a glass cloth-embeddedprepreg of 100 μm thick. A substrate was formed by stacking ten prepregsheets and lamination pressing the stack. The laminating press under apressure of 300 MPa included four consecutive stages of 120° C. for 30minutes, 150° C. for 30 minutes, 180° C. for 30 minutes, and 200° C. for30 minutes. The resulting glass cloth-embedded laminate was 800 μmthick.

In this way, sample Nos. 601 to 616 were obtained as shown in Tables 11and 12. Note that sample No. 601 was a glass cloth-embedded laminatefree of the flame retardant.

These laminate samples were tested as follows after they were cut to theshape prescribed in each test. The results are shown in Tables 11 and12. The dielectric constant and Q value are also shown in Tables 13 and14 and FIGS. 15 and 16.

i) UL-94 Burning Test

According to the test procedure set forth in Underwriters' Laboratories,Inc., Bulletin 94, Burning Test for Classifying Materials (referred toas UL-94), a specimen of 127 mm×12.7 mm×0.8 mm ({fraction (1/32)} inch)thick was tested by the UL-94 HB burning test and UL-94 V-0, V-1 and V-2burning test.

ii) Dielectric Constant and Q

A specimen of 90 mm×1.5 mm×0.8 mm thick was measured for dielectricconstant (E) at a frequency of 2 GHz, 5 GHz and 10 GHz by theperturbation method, from which a Q value was computed.

iii) Volume Resistivity

Measured in accordance with JIS C-6481. A specimen included an electrodeportion having a diameter of 50 mm and a thickness of 0.8 mm.

iv) Moisture Pickup (%)

A sample of 50 mm×50 mm×0.8 mm thick was tested by holding at 60° C. andRH 90% for 48 hours.

v) Coefficient of Linear Expansion

Using a thermal analyzer TMA-50 by Shimadzu Mfg. K.K., a sample of 10mm×10 mm×0.8 mm thick was heated in air from room temperature (18° C.)to 250° C. at a rate of 10° C./min. Measurement was made in thethickness direction of the sample.

vi) Flexural Strength

Using a universal load tester AGS1000D by Shimadzu Mgf. K.K., a sampleof 40 mm×25 mm×0.8 mm was tested in accordance with JIS C-6481.

Vii) Copper Foil Peel Strength

Using a universal load tester AGS1000D by Shimadzu Mgf. K.K., a sampleof 100 mm×25 mm×0.8 mm including a copper foil portion of 100 mm×10 mmwas tested in accordance with JIS C-6481.

-   -   viii) Decomposition Initiation Temperature (° C.)

Using a thermal analyzer DTG-50 by Shimadzu Mfg. K.K., a sample of 5mm×5 mm×0.8 mm thick was heated in air from room temperature (18° C.) to800° C. at a rate of 20° C./min.

ix) Corrosion Test

With a sample of 30 mm×10 mm×0.8 mm kept in an atmosphere of 40° C. andRH 90%, a dc voltage of 250 volts was applied across a 0.06 mm diametercopper conductor for 1,000 hours. It was examined whether or not thecopper conductor was broken and corroded with impurity ions. The samplewas rated “Passed” when neither breakage nor corrosion was found and“Rejected” when either breakage or corrosion occurred. TABLE 11 SampleNo. 601 (com.) 602 603 604 605 606 607 608 Formulation VB 100 80 70 6050 100 100 100 (weight EBTBPI 20 30 40 50 13 17 20 ratio) TBA C60 MPP-ACR900 Sb₂O₃ 7 8 10 Flame retardant 0 20.0 30.0 40.0 50.0 16.7 20.0 23.1content (wt %) Flame UL-94 burning test HB V-1 V-0 V-0 V-0 HB V-1 V-0retardance Electric Dielectric constant 3.33 3.38 3.42 3.43 3.45 3.463.44 3.44 properties @2 GHz Q @2 GHz 220 235 243 252 254 237 240 242Volume resistivity 3.00 × 10¹⁴ 3.10 × 10¹⁴ 2.50 × 10¹⁴ 2.60 × 10¹⁴ 2.40× 10¹⁴ 3.20 × 10¹⁴ 2.90 × 10¹⁴ 2.30 × 10¹⁴ (Ω-cm) Physical Moisturepickup 0.14 0.14 0.14 0.15 0.15 0.14 0.14 0.15 properties (%) MechanicalCoefficient of 112 103 89 78 74 102 90 77 properties linear expansion(ppm) Flexural strength 513 425 420 430 450 460 445 432 (MPa) Flexuralmodulus 15.0 14.2 14.6 14.9 14.8 14.8 15.1 15.2 (GPa) Cu foil peel 479510 530 510 500 520 540 560 strength (N/m) Thermal Decomposition 441 376378 375 379 365 363 360 properties temperature (° C.) Impurity Corrosiontest Passed Passed Passed Passed Passed Passed Passed Passed ionsEBTBPI: Cytech BT-93 (by Albemare), ethylenebis(tetrabromophthalimide)TBA: Flamecut 120G (by Tosoh K.K.), tetrabromobisphenol AC60: Terraju C30 (by Chisso K.K.), coated poly(ammonium phosphate)MPP-A: MPP-A (by Sanwa Chemical K.K.), poly(melamine phosphate)CR900: CR900 (by Daihachi Chemical K.K.), tris(tribromoneopentyl)phosphateSb₂O₃: Flamecut 610R (by Chisso K.K.), antimony trioxide

TABLE 12 Sample No. 609 (com.) 610 611 612 613 614 615 616 FormulationVB 100 100 100 100 100 100 60 50 (weight EBTBPI 30 ratio) TBA 17 20 30C60 40 MPP-A 40 CR900 40 50 Sb₂O₃ 15 8 10 15 Flame retardant 31.0 20.023.1 31.0 28.6 28.6 40.0 50.0 content (wt %) Flame UL-94 burning testV-0 HB V-0 V-0 V-1 V-1 V-1 V-0 retardance Electric Dielectric constant3.50 3.45 3.43 3.38 3.87 3.75 3.46 3.45 properties @2 GHz Q @2 GHz 241245 245 251 218 152 212 210 Volume resistivity 2.50 × 10¹⁴ 2.80 × 10¹⁴2.30 × 10¹⁴ 2.50 × 10¹⁴ 7.50 × 10¹³ 6.50 × 10¹³ 5.80 × 10¹³ 5.40 × 10¹³(Ω-cm) Physical Moisture pickup 0.15 0.14 0.15 0.14 0.20 0.21 0.14 0.15properties (%) Mechanical Coefficient of 69 103 90 73 76 79 130 145properties linear expansion (ppm) Flexural strength 418 465 472 445 410420 470 440 (MPa) Flexural modulus 15.5 14.7 14.5 14.2 13.5 13.2 14.313.8 (GPa) Cu foil peel 530 460 480 490 470 440 490 520 strength (N/m)Thermal Decomposition 362 340 337 333 313 327 307 305 propertiestemperature (° C.) Impurity Corrosion test Passed Passed Passed PassedRejected Rejected Passed Passed ionsEBTBPI: Cytech BT-93 (by Albemare), ethylenebis(tetrabromophthalimide)TBA: Flamecut 120G (by Tosoh K.K.), tetrabromobisphenol AC60: Terraju C30 (by Chisso K.K.), coated poly(ammonium phosphate)MPP-A: MPP-A (by Sanwa Chemical K.K.), poly(melamine phosphate)CR900: CR900 (by Daihachi Chemical K.K.), tris(tribromoneopentyl)phosphateSb₂O₃: Flamecut 610R (by Chisso K.K.), antimony trioxide

TABLE 13 Dielectric constant Sample No. 2 GHz 5 GHz 10 GHz 601(comparison) 3.33 3.31 3.12 604 (preferred) 3.43 3.41 3.26 608(preferred) 3.44 3.41 3.25 611 (preferred) 3.43 3.39 3.21 613 3.87 3.73.4 614 3.75 3.68 3.34 616 3.45 3.38 3.19

TABLE 14 Q Sample No. 2 GHz 5 GHz 10 GHz 601 (comparison) 220 183 163604 (preferred) 252 210 190 608 (preferred) 242 200 180 611 (preferred)245 199 181 613 218 175 158 614 152 128 115 616 210 174 157

As seen from Tables 11 and 12, the addition of the additive type flameretardant achieves an improvement in flame retardant level. Sample Nos.606 and 610 have the same HB rating as comparative sample No. 601, but areduced burning time, indicating an apparent improvement. In thesesamples, the amounts of flame retardant and flame retardant adjuvantadded are relatively small. By controlling these amounts, a shift to theV-1 or V-0 rating is possible. Particularly when the brominated aromaticflame retardant on which the invention places a favor is used, the resincan be flame retarded without detracting from dielectric properties.Other properties including mechanical properties, thermal properties andcorrosion are satisfactory as well.

More specifically, in the flame retardant test, the brominated aromaticflame retardant can achieve flame retardance to the UL-94 V-1 rating ata content of 20 wt % and to the UL-94 V-0 rating at a content of 30 wt%, both at the thickness of 0.8 mm ({fraction (1/32)} inch). Thecombination of the brominated aromatic flame retardant with the antimonytrioxide flame retardant adjuvant can achieve flame retardance to theUL-94 V-1 rating at a content of 20 wt % and to the UL-94 V-0 rating ata content of 23 wt %, both at the thickness of 0.8 mm ({fraction (1/32)}inch).

With respect to the high-frequency response of dielectric properties, ascompared with the non-flame-retarded polyvinylbenzyl ether compound(sample No. 601), the flame retardant formulations based on thebrominated aromatic flame retardant and the brominated aromatic flameretardant/antimony trioxide flame retardant adjuvant combination show animprovement of 10 to 15% in Q over the high-frequency region of 2 to 10GHz (see Table 14 and FIG. 16). Their dielectric constant is littleincreased as compared with the non-flame-retarded polyvinylbenzyl ethercompound (sample No. 601) (see Table 13 and FIG. 15). The flameretardant formulations based on other flame retardants sometimes developa phenomenon of increasing dielectric constant or lowering Q, which isundesirable as compared with the brominated aromatic flame retardant.Consequently, the formulations based on the brominated aromatic flameretardant achieve flame retardance without degradation of dielectricproperties or rather with an improvement in Q and are thus suited as thehigh-frequency material.

With respect to the thermal properties, as compared with thenon-flame-retarded polyvinylbenzyl ether compound (sample No. 601), theflame retardant formulations based on the brominated aromatic flameretardant and the brominated aromatic flame retardant/antimony trioxideflame retardant adjuvant combination show a low decomposition initiationtemperature. This low decomposition temperature, however, is rathereffective because in practice, decomposition must start at a lowertemperature than the base resin in order to achieve effective flameretardance.

However, the use of the brominated aromatic flame retardant isadvantageous because it does not decompose up to a higher temperaturethan other flame retardants and clears the heat resistance level (ofwithstanding several seconds at 260 to 350° C.) which is required forelectronic parts and wiring boards.

With respect to the mechanical properties, the flame retardantformulations based on the brominated aromatic flame retardant show a 10to 50% reduction in coefficient of linear expansion in the cured statealthough the coefficient varies with the amount of the flame retardant.This advantageously leads to a longer lifetime in the reliability andheat resistance tests.

With respect to the corrosion resistance, the brominated aromatic flameretardant imparts flame retardance without degrading the corrosion ofthe material.

Example 7-1

A 1-liter four-necked flask equipped with a thermostat, stirrer, coolingcondenser and dropping funnel was charged with 79.3 g (0.25 equivalent)of a polyphenol PP-700-300 (Nippon Oil K.K.), 42.7 g (0.28 equivalent)of vinylbenzyl chloride CMS-AM (m-/p-isomers 30/70 wt % mixture, SeimiChemical K.K.), 2.4 g of tetra-n-butylammonium bromide, 0.038 g of2,4-dinitrophenol, and 200 g of methyl ethyl ketone. The contents werestirred for dissolution and kept at 75° C. To the solution, 20 g (0.5equivalent) of sodium hydroxide in 20 g of water was added dropwise over20 minutes, followed by 4 hours of agitation at 75° C. The solution wasneutralized with a 10% aqueous solution of hydrochloric acid, and 100 gof toluene was added thereto. The organic layer was washed three timeswith 300 ml of water. The methyl ethyl ketone and toluene were distilledoff in vacuum, and the reaction product was poured into 300 ml ofmethanol for precipitation. A polyvinylbenzyl ether compound having asoftening point of 87° C. was collected in a yield of 95%.

This compound corresponds to formula (1) wherein R¹ is methyl, R² is amixture of C₁₋₁₀ alkyl groups (inclusive of aralkyl groups such asbenzyl), R³ is a mixture of hydrogen and vinylbenzyl in a molar ratio of0:100, and n=3. The product was identified by liquid chromatography(LC), infrared absorption spectroscopy (IR), and proton nuclear magneticresonance spectroscopy (¹H-NMR). The presence of phenolic hydroxylgroups was examined by the hydroxyl equivalent measurement according tothe neutralization titration procedure of JIS K-0070.

The polyvinylbenzyl ether compound, 55 g, was ground and dissolved in 45g of toluene (a solvent in which the compound is soluble), forming a 55wt % paste. The paste was placed in a vessel and dried at 90° C. for 20hours until the toluene was completely removed. That is, thepolyvinylbenzyl ether compound had a toluene content of substantially 0%by weight at the end of drying.

The dry solid was ground, placed in a mold of 100 mm×50 mm×1.5 mm, andcured under heat and pressure, that is, under a pressure of 2.94×10⁶ Pa(30 kgf/cm²) in four stages of 120° C. for 30 minutes, 150° C. for 30minutes, 180° C. for 30 minutes and 200° C. for 30 minutes. The curedproduct is designated sample No. 701.

Sample No. 702 was prepared as was sample No. 701 except that m-xylene(a solvent in which the compound is soluble) was used instead of tolueneas the solvent. The polyvinylbenzyl ether compound had a m-xylenecontent of substantially 0% by weight at the end of drying.

Sample No. 703 was prepared as was sample No. 701 except that methylethyl ketone (a solvent in which the compound is soluble) was usedinstead of toluene. The polyvinylbenzyl ether compound had a methylethyl ketone content of substantially 0% by weight at the end of drying.

Sample No. 704 was prepared as was sample No. 701 except that acetone (asolvent in which the compound is difficultly soluble) was used insteadof toluene. The polyvinylbenzyl ether compound had an acetone content ofsubstantially 0% by weight at the end of drying.

Sample No. 705 was prepared as was sample No. 701 except that thepolyvinylbenzyl ether compound was used without the solvent treatmentwith toluene.

From each of these cured samples, Nos. 701 to 705, a specimen of 100mm×1.5 mm×1.5 mm was cut out and measured for dielectric constant (E)and dissipation factor (tan δ), from which a Q value was computed.Measurement was effected at a frequency of 2 GHz by the perturbationmethod. The results are shown in Table 15. TABLE 15 Sample No. Treatingsolvent Solvent's ε Solubility ε tanδ Q 701 (invention) toluene 2.240good 2.552 0.00379 264 702 (invention) m-xylene 2.334 good 2.549 0.00361277 703 (invention) MEK 15.45 good 2.494 0.00383 261 704 (comparison)acetone 21.45 difficult 2.554 0.00442 226 705 (comparison) — — — 2.5560.00625 160

As compared with the cured product (sample No. 705) obtained using thepolyvinylbenzyl ether compound as synthesized, the cured products(sample Nos. 701 to 703) obtained using the polyvinylbenzyl ethercompound treated with the solvent in which the compound is well solubleshow an increase in Q of about 63 to 73%. On the other hand, the curedproduct (sample No. 704) obtained using the polyvinylbenzyl ethercompound treated with the solvent in which the compound is difficultlysoluble shows a lower Q than sample Nos. 701 to 703. Therefore, thetreatment of the polyvinylbenzyl ether compound with the solvent inwhich the compound is well soluble is effective in improving dielectricproperties such as Q.

Example 8-1

To 500 g of water in a 1-liter vessel was added 400 g of a dielectricpowder (BaO—TiO₂—Nd₂O base ceramic, ∈ (2 GHz)=95, tans (2 GHz)=0.00077,mean particle size 0.3 μm). The contents were agitated by an agitator.Then 8 g of an alkoxysilane coupling agent TSL-8113(methyltrimethoxysilane by Toshiba Silicone K.K.) was added to thedispersion which was agitated for 1 hour. The dispersion was allowed tostand for 1 hour. The dielectric powder was separated and dried at 110°C. for 16 hours. The coupling agent had a pyrolysis initiationtemperature of about 450 to 510° C. as analyzed by thermogravimetry (TG)and DSC.

In a common vessel, 55 g of a polyvinylbenzyl ether compound and 45 g oftoluene were agitated until the compound was completely dissolved,obtaining a solution containing 55% by weight of solids. Thepolyvinylbenzyl ether compound (VB) used was of the formula (1) whereinR¹ is methyl, R² is a mixture of C₁₋₁₀ alkyl groups (inclusive ofaralkyl groups such as benzyl), R³ is a mixture of hydrogen andvinylbenzyl in a molar ratio of 0:100, and n=3.

A slurry was prepared by adding 368.2 g of the surface treateddielectric powder to the VB solution, and agitating the mixture untilthorough dispersion. Glass cloth (Type 1080, thickness 50 μm, AsahiSchwebel K.K.) was coated and impregnated with the slurry, which waspre-cured at 110° C. for 2 hours, obtaining a glass cloth-embeddedprepreg of 100 μm thick.

A substrate was formed by stacking four prepreg sheets and laminationpressing the stack. The laminating press under a pressure of 300 MPaincluded three consecutive stages of 120° C. for 30 minutes, 150° C. for30 minutes, and 180° C. for 6.5 hours. The resulting glasscloth-embedded laminate was 400 μm thick. This is designated sample No.801.

Sample No. 802 was prepared as was sample No. 801 except that thecoupling agent was changed to an organic functional silane couplingagent TSL-8370 (γ-methacryloxypropyltrimethoxysilane by Toshiba SiliconeK.K.). The coupling agent had a pyrolysis initiation temperature ofabout 260 to 350° C. as analyzed by TG and DSC.

Sample No. 803 was prepared as was sample No. 801 except that thecoupling agent was changed to a titanate coupling agent Plainact KR-46B(by Ajinomoto K.K.). The coupling agent had a pyrolysis initiationtemperature of about 220 to 230° C. as analyzed by TG and DSC.

Sample No. 804 was prepared as was sample No. 0.801 except that thedielectric powder which had not been surface treated with the couplingagent was used.

From each of these glass cloth-embedded laminate samples, Nos. 801 to804, a specimen of 90 mm×0.7 mm×0.4 mm thick was cut out and measuredfor dielectric constant (∈) and dissipation factor (tan δ) at afrequency of 2 GHz by the perturbation method, from which a Q value wascomputed.

The samples were aged under the following three sets of hot or humidconditions. Changes of dielectric constant and Q from their initialvalues were determined.

1) 85° C., RH 85%, 500 hr.

2) 125° C., 470 hr.

3) 3, 6, 9 or 12 reflow cycles at a maximum temperature of 260° C.

The initial values of dielectric constant (∈) and Q are shown in Table16 together with the composition. Changes Δ∈ and ΔQ, expressed inpercents, of dielectric constant (∈) and Q from their initial values areshown in FIGS. 17 to 22. TABLE 16 Sample No. 801 802 803 804 VB (g) 5555 55 55 Toluene (g) 45 45 45 45 BaO—TiO₂—Nd₂O base 361 361 361 361dielectric powder (g) Coupling agent TSL-8113 (g) 7.2 — — — Couplingagent TSL-8370 (g) — 7.2 — — Coupling agent KR-46B (g) — — 7.2 — ε @2GHz 15.01 13.88 13.88 14.98 Q @2 GHz 359 300 325 347TSL-8113: alkoxysilane coupling agent, methyltrimethoxy-silane, ToshibaSilicone K.K.TSL-8370: organic functional silane coupling agent,γ-methacryloxypropyltrimethoxysilane, Toshiba Silicone K.K.KR-46B: titanate coupling agent Plainact KR-46B, Ajinomoto K.K.

It is evident from Table 16 that as compared with the sample using theuntreated dielectric powder, the samples using the dielectric powdersurface treated with a coupling agent experience little changes of ∈ andQ during aging under 125° C. (high temperature holding) and 85° C./RH85% (steady humid holding). Especially when the alkoxysilane andorganofunctional silane coupling agents having a pyrolysis initiationtemperature of at least 250° C. are used, the changes of ∈ and Q can beadvantageously suppressed not only under the above two sets ofconditions, but also under the reflow conditions. When the titanatecoupling agent is used, little changes of ∈ and Q occur during the 85°C./RH 85% aging, suggesting that the titanate coupling agent iseffective under such conditions. Therefore, a choice among differentcoupling agents is made in accordance with the intended agingconditions.

Example 8-2

A glass cloth-embedded laminate, sample No. 821, was prepared as wassample No. 802 except that additive type flame retardant Cytech BT-93(ethylenebis(tetrabromophthalimide), by Albemare) was added to thetoluene solution of the polyvinylbenzyl ether compound. The amount ofadditive type flame retardant added was 20% by weight based on thepolyvinylbenzyl ether compound.

A specimen of 127 mm×12.7 mm×0.8 mm of this sample No. 821 was subjectedto the UL-94 burning test. It was classified in the V-0 rating,indicating good flame retardance. No loss of dielectric properties byflame retarding was found.

Example 8-3

A glass cloth-embedded laminate, sample No. 822, was prepared as wassample No. 802 except that instead of the toluene solution of thepolyvinylbenzyl ether compound, a 55 wt % toluene solution of apolyvinylbenzyl ether compound of reactive type flame retardanttetrabromobisphenol-A was used, and 30 wt % of a polyvinylbenzyl ethercompound of tetrabromobisphenol-A with 0.3 wt % of phenothiazine(polymerization inhibitor) added was used. It is noted that thepolyvinylbenzyl ether compound of tetrabromobisphenol-A was obtainedfrom tetrabromobisphenol-A and vinylbenzyl chloride (m-/p-isomers 50/50weight ratio mixture by Seimi Chemical K.K.).

A specimen of 127 mm×12.7 mm×0.8 mm of this sample No. 822 was subjectedto the UL-94 burning test. It was classified in the V-0 rating,indicating good flame retardance. No loss of dielectric properties byflame retarding was found.

Example 9-1

FIGS. 23 and 24 illustrate an inductor according to a further embodimentof the invention. FIG. 23 is a see-through perspective view and FIG. 24is a cross-sectional view.

In FIGS. 23 and 24, the inductor 10 includes constituent layers(prepregs or substrates) 10 a to 10 e containing the inventive resin,internal conductors (coil patterns) 13 formed on the constituent layers10 b to 10 e, and via holes 14 for providing electrical connection tothe internal conductors 13. Via holes 14 can be formed by drilling,laser machining, etching or the like. The ends of each coil formed areconnected to through-vias 12 formed along end surfaces of the inductor10 and land patterns 11 formed slightly above or below the through-vias12. Through-via 12 has a half-cut structure by dicing or V-cutting. Thisis because a plurality of devices are formed in a collective substratewhich is eventually cut into discrete chips along lines at the centersof through-vias 12.

The constituent layers 10 a to 10 e of the inductor 10 should preferablyhave a dielectric constant of 2.6 to 3.5 because the distributedcapacitance must be minimized for the potential application as ahigh-frequency chip inductor. Use of the above-mentioned organicdielectric layers is thus preferred. Separately, for an inductorconstructing a resonance circuit, the distributed capacitance issometimes positively utilized. In such application, the constituentlayers should preferably have a dielectric constant of 5 to 40. Use ofthe above-mentioned first and second composite dielectric layers is thuspreferred. In this way, it becomes possible to reduce the device sizeand eliminate capacitive elements. Also in these inductors the materialloss should be minimized. By setting the dielectric dissipation factor(tan δ) in the range of 0.0025 to 0.0075, an inductor having a minimizedmaterial loss and a high Q is obtainable. Further where a noise removingapplication is under consideration, the impedance must be maximized atthe frequency of noise to be removed. For such application, a magneticpermeability of 3 to 20 is appropriate, and use of the above-mentionedcomposite magnetic layers is preferred. This drastically improves theeffect of removing high-frequency noise. The respective constituentlayers may be identical or different, and an optimum combination thereofmay be selected.

The equivalent circuit is shown in FIG. 32A. As seen from FIG. 32A, anelectronic part (inductor) having a coil 31 is illustrated in theequivalent circuit.

Example 9-2

FIGS. 25 and 26 illustrate an inductor according to a further embodimentof the invention. FIG. 25 is a see-through perspective view and FIG. 26is a cross-sectional view.

In this example, the coil pattern which is wound and stacked in avertical direction in Example 9-1 is changed to a helical coil which iswound in a lateral direction. The remaining components are the same asin Example 9-1. The same components are designated by like numerals andtheir description is omitted.

Example 9-3

FIGS. 27 and 28 illustrate an inductor according to a further embodimentof the invention. FIG. 27 is a see-through perspective view and FIG. 28is a cross-sectional view.

In this example, the coil pattern which is wound and stacked in avertical direction in Example 9-1 is changed such that upper and lowerspiral coils are connected. The remaining components are the same as inExample 9-1. The same components are designated by like numerals andtheir description is omitted.

Example 9-4

FIGS. 29 and 30 illustrate an inductor according to a further embodimentof the invention. FIG. 29 is a see-through perspective view and FIG. 30is a cross-sectional view.

In this example, the coil pattern which is wound and stacked in avertical direction in Example 9-1 is changed to an internal meandercoil. The remaining components are the same as in Example 9-1. The samecomponents are designated by like numerals and their description isomitted.

Example 9-5

FIG. 31 is a see-through perspective view of an inductor according to afurther embodiment of the invention.

In this example, the single coil in Example 9-1 is changed to an arrayof four juxtaposed coils. This array achieves a space saving. Theremaining components are the same as in Example 9-1. The same componentsare designated by like numerals and their description is omitted. Theequivalent circuit is shown in FIG. 32B. As shown in FIG. 32B, anelectronic part (inductor array) having four coils 31 a to 31 d isillustrated in the equivalent circuit.

Example 9-6

FIGS. 33 and 34 illustrate a capacitor according to a further embodimentof the invention. FIG. 33 is a see-through perspective view and FIG. 34is a cross-sectional view.

In FIGS. 33 and 34, the capacitor 20 includes constituent layers(prepregs or substrates) 20 a to 20 g containing the inventive resin,internal conductors (internal electrode patterns) 23 formed on theconstituent layers 20 b to 20 g, through-vias 22 formed along endsurfaces of the capacitor 20 and alternately connected to the internalconductors 23, and land patterns 21 formed slightly above or below thethrough-vias 22.

The constituent layers 20 a to 20 g of the capacitor 20 shouldpreferably have a dielectric constant of 2.6 to 40 and a dielectricdissipation factor of 0.0025 to 0.0075 when the diversity and precisionof capacitance are considered. Then a choice may be made among theabove-mentioned organic dielectric layers or the above-mentioned firstand second composite dielectric layers. This enables to provide a widerrange of capacitance and afford even a low capacitance at a highprecision. It is also required that the material loss be minimized. Bysetting the dielectric dissipation factor (tan δ) in the range of 0.0075to 0.025, a capacitor having a minimized material loss is obtainable.The respective constituent layers may be identical or different and anoptimum combination thereof may be selected.

The equivalent circuit is shown in FIG. 36A. As shown in FIG. 36A, anelectronic part (capacitor) having a capacitance 32 is illustrated inthe equivalent circuit.

Example 9-7

FIG. 35 is a see-through perspective view of a capacitor according to afurther embodiment of the invention.

In this example, the single capacitor in Example 9-6 is changed to anarray of four juxtaposed capacitors. When capacitors are formed in anarray, it sometimes occurs to provide different capacitances at a highprecision. To this end, the above-mentioned ranges of dielectricconstant and dielectric dissipation factor are preferable. The remainingcomponents are the same as in Example 9-6. The same components aredesignated by like numerals and their description is omitted. Theequivalent circuit is shown in FIG. 36B. As shown in FIG. 36B, anelectronic part (capacitor array) having four capacitors 32 a to 32 d isillustrated in the equivalent circuit.

Example 9-8

FIGS. 37 to 40 illustrate a balun transformer according to a furtherembodiment of the invention. FIG. 37 is a see-through perspective view,FIG. 38 is a cross-sectional view, FIG. 39 is an exploded plan view ofrespective constituent layers, and FIG. 40 is an equivalent circuitdiagram.

In FIGS. 37 to 40, the balun transformer 40 includes a stack ofconstituent layers 40 a to 40 o, internal GND conductors 45 disposedabove, below and intermediate the stack, and internal conductors 43formed between the internal GND conductors 45. The internal conductors43 are spiral conductor sections 43 having a length of λg/4 which areconnected by via holes 44 so as to construct coupling lines 53 a to 53 das shown in the equivalent circuit of FIG. 40.

The constituent layers 40 a to 40 o of the balun transformer 40 shouldpreferably have a dielectric constant of 2.6 to 40 and a dielectricdissipation factor (tan δ) of 0.0075 to 0.025. Then a choice may be madeamong the above-mentioned organic dielectric layers or theabove-mentioned first and second composite dielectric layers. In someapplications wherein a magnetic permeability of 3 to 20 is appropriate,use of the above-mentioned composite magnetic layers is preferred. Therespective constituent layers may be identical or different and anoptimum combination thereof may be selected.

Example 9-9

FIGS. 41 to 44 illustrate a multilayer filter according to a furtherembodiment of the invention. FIG. 41 is a perspective view, FIG. 42 isan exploded perspective view, FIG. 43 is an equivalent circuit diagram,and FIG. 44 is a transmission diagram. The multilayer filter isconstructed as having two poles.

In FIGS. 41 to 44, the multilayer filter 60 includes a stack ofconstituent layers 60 a to 60 e, a pair of strip lines 68 and a pair ofcapacitor conductors 67 both disposed approximately at the center of thestack. The capacitor conductors 67 are formed on a lower constituentlayer group 60 d, and the strip lines 68 are formed on a constituentlayer 60 c thereon. GND-conductors 65 are formed on upper and lower endsurfaces of the constituent layers 60 a to 60 e so that the strip lines68 and capacitor conductors 67 are interleaved therebetween. The striplines 68, capacitor conductors 67 and GND conductors 65 are connected toend electrodes (external terminals) 62 formed on end sides and landpatterns 61 formed slightly above or below the end electrodes 62. GNDpatterns 66 which are formed on opposite sides and slightly above orbelow therefrom are connected to GND conductors 0.65.

The strip lines 68 are strip lines 74 a, 74 b having a length of λg/4 orshorter as shown in the equivalent circuit of FIG. 43. Each capacitorconductor 67 constitutes an input or output coupling capacitance Ci. Thestrip lines 74 a and 74 b are coupled by a coupling capacitance Cm and acoupling coefficient M. Such an equivalent circuit indicates theimplementation of a multilayer filter having transmissioncharacteristics of the two pole type as shown in FIG. 44.

The multilayer filter 60 exhibits desired transmission characteristicsin a frequency band of several hundreds of megahertz to severalgigahertz when the constituent layers 60 a to 60 e have a dielectricconstant of 2.6 to 40. It is desired to minimize the material loss ofthe strip line resonator, and hence, setting a dielectric dissipationfactor (tan δ) in the range of 0.0025 to 0.0075 is preferable. Then achoice may be made among the above-mentioned organic dielectric layersor the above-mentioned first and second composite dielectric layers. Therespective constituent layers may be identical or different and anoptimum combination thereof may be selected.

Example 9-10

FIGS. 45 to 48 illustrate a multilayer filter according to a furtherembodiment of the invention. FIG. 45 is a perspective view, FIG. 46 isan exploded perspective view, FIG. 47 is an equivalent circuit diagram,and FIG. 48 is a transmission diagram. The multilayer filter isconstructed as having four poles.

In FIGS. 45 to 48, the multilayer filter 60 includes a stack ofconstituent layers 60 a to 60 e, four strip lines 68 and a pair ofcapacitor conductors 67 both disposed approximately at the center of thestack. The remaining components are the same as in Example 9-9. The samecomponents are designated by like numerals and their description isomitted.

Example 9-11

FIGS. 49 to 54 illustrate a block filter according to a furtherembodiment of the invention. FIG. 49 is a see-through perspective view,FIG. 50 is a front elevational view, FIG. 51 is a cross-sectional sideview, FIG. 52 is a cross-sectional plan view, FIG. 53 is an equivalentcircuit diagram of the block filter, and FIG. 54 is a see-through sideview of a mold. The block filter is constructed as having two poles.

In FIGS. 49 to 54, the block filter 80 includes a constituent block 80a, a pair of coaxial conductors 81 and a pair of capacitor coaxialconductors 82 formed in the block 80 a. The coaxial conductors 81 andcapacitor coaxial conductors 82 are constructed by hollow conductorsextending through the constituent block 80 a. A surface GND conductor 87is formed around the constituent block 80 a so as to cover the block 80a. Capacitor conductors 83 are formed on the areas corresponding to thecapacitor conductors 82. The capacitor conductors 83 and surface GNDconductor 87 also serve as input/output terminals and part attachmentterminals. It is to be noted that the coaxial conductors 81 andcapacitor coaxial conductors 82 are formed by drilling bores through theconstituent block 80 a and applying a conductive material to the insidesurface of the bores by electroless plating or evaporation.

The coaxial conductors 81 are coaxial lines 94 a and 94 b having alength of λg/⁴ or shorter as shown in the equivalent circuit diagram ofFIG. 53. The GND conductor 87 is formed so as to surround the coaxialconductors 81. The capacitor coaxial conductor 82 forms an input oroutput coupling capacitance Ci with the capacitor conductor 83. Thecoaxial conductors 81 are coupled with each other through a couplingcapacitance Cm and a coupling coefficient M. This construction leads toan equivalent circuit as shown in FIG. 53, realizing a block filterhaving transfer characteristics of the two pole type.

FIG. 54 is a schematic cross section showing one exemplary mold forforming the constituent block 80 a of the block filter 80. In thefigure, the mold include a metal base 103 of iron or the like which isformed with a resin inlet sprue 104 and a runner 106. The compositedielectric material of which the constituent block 80 a is formed isadmitted in liquid state through the inlet sprue 104 and runner 106 topart-forming cavities 105 a and 105 b. With the mold internally filledwith the composite dielectric material, cooling or heating treatment iscarried out. After the composite dielectric material is solidified, itis taken out of the mold. Unnecessary portions which have cured in therunner and the like are cut off. In this way, the constituent block 80 aas shown in FIGS. 49 to 52 is formed.

On the thus formed constituent block 80 a, the surface GND conductor 87,coaxial conductors 81 and capacitor coaxial conductors 82 are formedfrom copper, gold, palladium, platinum or aluminum by carrying outsuitable treatments such as plating, etching, printing, sputtering andevaporation.

The block filter 80 exhibits desired transmission characteristics in theband of several hundreds of megahertz to several gigahertz when theconstituent block 80 a has a dielectric constant of 2.6 to 40. It isalso desired to minimize the material loss of a coaxial resonator andhence, setting a dielectric dissipation factor (tan δ) in the range of0.0025 to 0.0075 is preferable. Then a choice may be made among theabove-mentioned organic dielectric layers or the above-mentioned firstand second composite dielectric layers.

Example 9-12

FIGS. 55 to 59 illustrate a coupler according to an further embodimentof the invention. FIG. 55 is a perspective view, FIG. 56 is across-sectional view, FIG. 57 is an exploded perspective view ofrespective constituent layers, FIG. 58 is a diagram of internalconnection, and FIG. 59 is an equivalent circuit diagram.

In FIGS. 55 to 59, the coupler 110 includes a stack of constituentlayers 110 a to 110 c, internal GND conductors 115 formed and disposedon the top and bottom of the stack, and internal conductors 113 formedbetween the internal GND conductors 115. The internal conductors 113 areconnected by via holes 114 in a spiral fashion so that two coilsconstruct a transformer. Ends of the thus formed coils and internal GNDconductors 115 are connected to through-vias 112 formed on end sides andland patterns 111 formed slightly above or below the through-vias 112 asshown in FIG. 58. With the above construction, a coupler 110 having twocoils 125 a and 125 b coupled is obtained as shown in the equivalentcircuit diagram of FIG. 59.

Where a wide band is to be realized, the constituent layers 110 a to 110c of the coupler 110 should preferably have a minimized dielectricconstant. For size reduction, on the other hand, a higher dielectricconstant is desirable. Therefore, depending on the intended application,required performance and specifications, a material having anappropriate dielectric constant may be used. In most cases, setting adielectric constant in the range of 2.6 to 40 ensures desiredtransmission characteristics in a band of several hundreds of megahertzto several gigahertz. For increasing the Q value of an internalinductor, a dielectric dissipation factor (tan δ) of 0.0025 to 0.0075 ispreferable. This choice enables to form an inductor having a minimizedmaterial loss and a high Q value, leading to a high performance coupler.Then a choice may be made among the above-mentioned organic dielectriclayers or the above-mentioned first and second composite dielectriclayers. The respective constituent layers may be identical or differentand an optimum combination thereof may be selected.

Example 9-13

FIGS. 60 to 62 illustrate an antenna according to a further embodimentof the invention. FIG. 60 is a see-through perspective view, FIG. 61A isa plan view, FIG. 61B is a cross-sectional elevational view, FIG. 61C isa cross-sectional end view, and FIG. 62 is an exploded perspective viewof respective constituent layers.

In FIGS. 60 to 62, the antenna 130 includes a stack of constituentlayers (prepregs or substrates) 130 a to 130 c containing the inventiveresin, and internal conductors (antenna patterns) 133 formed onconstituent layers 130 b and 130 c. Ends of the internal conductors 133are connected to through-vias 132 formed at end sides of the antenna andland patterns 131 formed slightly above and below the through-vias 132.In this example, the internal conductor 133 is constructed as areactance element having a length of about λg/4 at the operatingfrequency and formed in a meander fashion.

Where a wide band is to be realized, the constituent layers 130 a to 130c of the antenna 130 should preferably have a minimized dielectricconstant. For size reduction, on the other hand, a higher dielectricconstant is desirable. Therefore, depending on the intended application,required performance and specifications, a material having anappropriate dielectric constant may be used. In most cases, a dielectricconstant in the range of 2.6 to 40 and a dielectric dissipation factor(tan δ) of 0.0075 to 0.025 are preferable. Then a choice may be madeamong the above-mentioned organic dielectric layers or theabove-mentioned first and second composite dielectric layers. Thischoice enables to spread the frequency range and increase the precisionof formation. It is also necessary to minimize the material loss. Bysetting a dielectric dissipation factor (tan δ) of 0.0025 to 6.0075, anantenna having a minimum material loss is achievable. In anotherapplication, it is preferable to have a magnetic permeability of 3 to20, and a choice may be made of the above-mentioned composite magneticlayers. The respective constituent layers may be identical or differentand an optimum combination thereof may be selected.

Example 9-14

FIGS. 63 and 64 illustrate an antenna according to a further embodimentof the invention. FIG. 63 is a see-through perspective view, and FIG. 64is an exploded perspective view of respective constituent layers. Theantenna in this example is constructed as an antenna having a helicalinternal electrode.

In FIGS. 63 and 64, the antenna 140 includes a stack of constituentlayers (prepregs or substrates) 140 a to 140 c containing the inventiveresin, and internal conductors (antenna patterns) 143 a, 143 b formed onconstituent layers 140 b and 140 c. The upper and lower internalconductors 143 a and 143 b are connected by via holes 144 to form ahelical inductance device. The remaining components are the same as inExample 9-13. The same components are designated by like numerals andtheir description is omitted.

Example 9-15

FIGS. 65 and 66 illustrate a patch antenna according to a furtherembodiment of the invention. FIG. 65 is a see-through perspective view,and FIG. 66 is a cross-sectional view.

In FIGS. 65 and 66, the patch antenna 150 includes a constituent layer(prepreg or substrate) 150 a of the inventive composite resin, a patchconductor (antenna pattern) 159 formed on the top of constituent layer150 a, and a GND conductor 155 formed on the bottom of constituent layer150 a so as to oppose to the patch conductor 159. A power supply throughconductor 154 is connected to the patch conductor 159 at a power supplysite 153. An annular gap 156 is provided between the through conductor154 and the GND conductor 155 so that the through conductor 154 may notbe connected to the GND conductor 155. Then power supply is providedfrom below the GND conductor 155 via the through conductor 154.

Where a wide band is to be realized, the constituent layer 150 a of thepatch antenna 150 should preferably have a minimized dielectricconstant. For size reduction, on the other hand, a higher dielectricconstant is desirable. Therefore, depending on the intended application,required performance and specifications, a material having anappropriate dielectric constant may be used. In most cases, a dielectricconstant in the range of 2.6 to 40 and a dielectric dissipation factor(tan δ) of 0.0075 to 0.025 are preferable. Then a choice may be madeamong the above-mentioned organic dielectric layers or theabove-mentioned first and second composite dielectric layers. Thischoice enables to spread the frequency range and increase the precisionof formation. It is also necessary to minimize the material loss. Bysetting a dielectric dissipation factor (tan δ) of 0.0025 to 0.0075, anantenna having a minimum material loss and a high radiation efficiencyis achievable.

In a frequency band of less than several hundreds of megahertz, amagnetic material exerts a wavelength reducing effect as a dielectricmaterial does, which enables to increase the inductance of a radiationelement. By matching the frequency peak of Q, a high Q value isavailable even at a relatively low frequency. Then a magneticpermeability of 3 to 20 is preferable in some applications and use ofthe above-mentioned composite magnetic layers is preferred. This enablesperformance improvement and size reduction in a frequency band of lessthan several hundreds of megahertz. The respective constituent layersmay be identical or different and an optimum combination thereof may beselected.

Example 9-16

FIGS. 67 and 68 illustrate a patch antenna according to a furtherembodiment of the invention. FIG. 67 is a see-through perspective view,and FIG. 68 is a cross-sectional view.

In FIGS. 67 and 68, the patch antenna 160 includes a constituent layer(prepreg or substrate) 160 a of the inventive composite resin, a patchconductor (antenna pattern) 169 formed on the top of constituent layer160 a, and a GND conductor 165 formed on the bottom of constituent layer160 a so as to oppose to the patch conductor 169. A power supplyconductor 161 is provided near the patch conductor 169, but spacedtherefrom. Power supply is provided to the power supply conductor 161via a power supply terminal 162. The power supply terminal 162 may beformed from copper, gold, palladium, platinum, aluminum or the like byeffecting suitable treatment such as plating, termination, printing,sputtering or evaporation. The remaining components are the same as inExample 9-15. The same components are designated by like numerals andtheir description is omitted.

Example 9-17

FIGS. 69 and 70 illustrate a multilayer patch antenna according to afurther embodiment of the invention. FIG. 69 is a see-throughperspective view, and FIG. 70 is a cross-sectional view.

In FIGS. 69 and 70, the patch antenna 170 includes constituent layers(prepregs or substrates) 150 a, 150 b of the inventive composite resin,patch conductors 159 a, 159 e formed on the constituent layers 150 a,150 b, and a GND conductor 155 formed on the bottom of constituent layer150 b so as to oppose to the patch conductors 159 a, 159 e. A powersupply through conductor 154 is connected to the patch conductor 159 aat a power supply site 153 a. A gap 156 is provided between the throughconductor 154 and the GND conductor 155 and patch conductor 159 e sothat the through conductor 154 may not be connected to the GND conductor155 and patch conductor 159 e. Then power supply is provided to thepatch conductor 159 a from below the GND conductor 155 via the throughconductor 154. At this point, power supply is provided to the patchconductor 159 e by the capacitive coupling with the patch conductor 159a and the capacitance due to the gap with the through conductor 154. Theremaining components are the same as in Example 9-15. The samecomponents are designated by like numerals and their description isomitted.

Example 9-18

FIGS. 71 and 72 illustrate a multi-array patch antenna according to afurther embodiment of the invention. FIG. 71 is a see-throughperspective view, and FIG. 72 is a cross-sectional view.

As opposed to Example 9-17 in which the patch antenna is constructedsingly, four patch antennas are arranged in an array in this example. InFIGS. 71 and 72, the array includes constituent layers 150 a, 150 b ofthe inventive composite resin materials, patch conductors 159 a, 159 b,159 c, 159 d formed on the constituent layer 150 a, patch conductors 159e, 159 f, 159 g, 159 h formed on the constituent layer 150 b, and a GNDconductor 155 formed on the bottom of the constituent layer 150 b so asto oppose to the patch conductors 159 a, 159 e. The remaining componentsare the same as in Example 9-17. The same components are designated bylike numerals and their description is omitted.

The array formation enables to reduce the size of a set and the numberof parts.

Example 9-19

FIGS. 73 to 75 illustrate a voltage controlled oscillator (VCO)according to a further embodiment of the invention. FIG. 73 is asee-through perspective view, FIG. 74 is a cross-sectional view, andFIG. 75 is an equivalent circuit diagram.

In FIGS. 73 to 75, the VCO includes a stack of constituent layers 210 ato 210 g of composite resin materials, electronic parts 261 disposed andformed on the stack including capacitors, inductors, semiconductors andregisters, and conductor patterns 262, 263, 264 formed above, below andintermediate the constituent layers 210 a to 210 g. Since the VCO isconstructed to an equivalent circuit as shown in FIG. 75, it furtherincludes strip lines 263, capacitors, signal lines, semiconductors andpower supply lines. It is advantageous to form the respectiveconstituent layers from materials selected appropriate for theirfunction.

For the constituent layers 210 f, 210 g constructing a resonator in thisexample, it is preferred to use organic dielectric layers or first orsecond composite dielectric layers having a dielectric dissipationfactor of 0.0025 to 0.0075. For the constituent layers 210 c to 210 econstructing a capacitor, it is preferred to use first or secondcomposite dielectric layers so as to give a dielectric dissipationfactor of 0.0075 to 0.025 and a dielectric constant of 5 to 40. For theconstituent layers 210 a, 210 b constructing wiring and an inductor, itis preferred to use organic dielectric layers having a dielectricdissipation factor of 0.0025 to 0.0075 and a dielectric constant of 2.6to 3.5.

On the surface of constituent layers 210 a to 210 g, there are providedinternal conductors including strip line 263, GND conductor 262,capacitor conductor 264, wiring inductor conductor 265 and terminalconductor 266. Upper and lower internal conductors are connected by viaholes 214. Electronic parts 261 are mounted on the surface, completing aVCO corresponding to the equivalent circuit of FIG. 75.

This construction enables to provide an appropriate dielectric constant,Q and dielectric dissipation factor for a distinct function, arriving ata high performance, small size, and thin part.

Example 9-20

FIGS. 76 to 78 illustrate a power amplifier according to a furtherembodiment of the invention. FIG. 76 is an exploded plan view ofrespective constituent layers, FIG. 77 is a cross-sectional view, andFIG. 78 is an equivalent circuit diagram.

In FIGS. 76 to 78, the power amplifier includes a stack of constituentlayers 300 a to 300 e, electronic parts 361 formed thereon includingcapacitors, inductors, semiconductors and registers, and conductorpatterns 313, 315 formed above, below and intermediate the constituentlayers 300 a to 300 e. Since the power amplifier is constructed to anequivalent circuit as shown in FIG. 78, it further includes strip linesL11 to L17, capacitors C11 to C20, signal lines, and power supply linesto semiconductor devices. It is advantageous to form the respectiveconstituent layers from materials selected appropriate for theirfunction.

For the constituent layers 300 d, 300 e constructing strip lines in thisexample, it is preferred to use organic dielectric layers or first orsecond composite dielectric layers having a dielectric dissipationfactor of 0.0075 to 0.025 and a dielectric constant of 2.6 to 40. Forthe constituent layers 300 a to 300 c constructing a capacitor, it ispreferred to use first or second composite dielectric layers so as togive a dielectric dissipation factor of 0.0075 to 0.025 and a dielectricconstant of 5 to 40.

On the surface of constituent layers 300 a to 300 e, there are providedinternal conductors 313, GND conductors 315, and the like. Upper andlower internal conductors are connected by via holes 314. Electronicparts 361 are mounted on the surface, completing a power amplifiercorresponding to the equivalent circuit of FIG. 78.

This construction enables to provide an appropriate dielectric constant,Q and dielectric dissipation factor for a distinct function, arriving ata high performance, small size, and thin part.

Example 9-21

FIGS. 79 to 81 illustrate a superposed module according to a furtherembodiment of the invention, the module finding use as an optical pickupor the like. FIG. 79 is an exploded plan view of respective constituentlayers, FIG. 80 is a cross-sectional view, and FIG. 81 is an equivalentcircuit diagram.

In FIGS. 79 to 81, the superposed module includes a stack of constituentlayers 400 a to 400 k, electronic parts 461 formed thereon includingcapacitors, inductors, semiconductors and registers, and conductorpatterns 413, 415 formed above, below and intermediate the constituentlayers 400 a to 400 k. Since the superposed module is constructed to anequivalent circuit as shown in FIG. 81, it further includes inductorsL21, L23, capacitors C21 to C27, signal lines, and power supply lines tosemiconductor devices. It is advantageous to form the respectiveconstituent layers from materials selected appropriate for theirfunction.

For the constituent layers 400 d to 400 h constructing capacitors inthis example, it is preferred to use second composite dielectric layersso as to give a dielectric dissipation factor of 0.0075 to 0.025 and adielectric constant of 10 to 40. For the constituent layers 400 a to 400c, 400 j to 400 k constructing inductors, it is preferred to use organicdielectric layers having a dielectric dissipation factor of 0.0025 to0.0075 and a dielectric constant of 2.6 to 3.5.

On the surface of constituent layers 400 a to 400 k, there are providedinternal conductors 413, GND conductors 415, and the like. Upper andlower internal conductors are connected by via holes 414. Electronicparts 461 are mounted on the surface, completing a superposed modulecorresponding to the equivalent circuit of FIG. 81.

This construction enables to provide an appropriate dielectric constant,Q and dielectric dissipation factor for a distinct function, arriving ata high performance, small size, and thin part.

Example 9-22

FIGS. 82 to 85 illustrate a RF module according to a further embodimentof the invention. FIG. 82 is a perspective view, FIG. 83 is aperspective view with an outer housing removed, FIG. 84 is an explodedperspective view of respective constituent layers, and FIG. 85 is across-sectional view.

In FIGS. 82 to 85, the RF module includes a stack of constituent layers500 a to 500 i, electronic parts 561 formed and disposed thereonincluding capacitors, inductors, semiconductors and registers, conductorpatterns 513, 515, 572 formed above, below and intermediate theconstituent layers 500 a to 500 i, and an antenna pattern 573. Asmentioned just above, the RF module includes inductors, capacitors,signal lines, and power supply lines to semiconductor devices. It isadvantageous to form the respective constituent layers from materialsselected appropriate for their function.

For the constituent layers 500 a to 500 d, 500 g constructing theantenna, strip lines and wiring in this example, it is preferred to useorganic dielectric layers having a dielectric dissipation factor of0.0025 to 0.0075 and a dielectric constant of 2.6 to 3.5. For theconstituent layers 500 e to 500 f constructing capacitors, it ispreferred to use second composite dielectric layers so as to give adielectric dissipation factor of 0.0075 to 0.025 and a dielectricconstant of 10 to 40. For the constituent layers 500 h to 500 iconstructing the power supply line, it is preferred to use compositemagnetic layers having a magnetic permeability of 3 to 20.

On the surface of constituent layers 500 a to 500 i, there are providedinternal conductors 513, GND conductors 515, antenna conductors 573, andthe like. Upper and lower internal conductors are connected by via holes514. Electronic parts 561 are mounted on the surface, completing a RFmodule.

This construction enables to provide an appropriate dielectric constant,Q and dielectric dissipation factor for a distinct function, arriving ata high performance, small size, and thin part.

Example 9-23

FIGS. 86 and 87 illustrate a resonator according to a further embodimentof the invention. FIG. 86 is a see-through perspective view, and FIG. 87is a cross-sectional view.

In FIGS. 86 and 87, the resonator includes a base body 610 and a coaxialconductor 641 in the form of a through hole formed in the base body.This resonator is formed by the same method as the block filter ofExample 9-11. Specifically, on the base body 610 formed in a mold, asurface GND conductor 647, a coaxial conductor 641 connected to thesurface GND conductor 647 through an edge electrode 682, and a resonatorHOT terminal 681 connected to the coaxial conductor 641 are formed fromcopper, gold, palladium, platinum or aluminum by carrying out suitabletreatments such as plating, etching, printing, sputtering andevaporation. The coaxial conductor 641 is a coaxial line having aspecific impedance, and the surface GND conductor 647 is formed so as tosurround it.

The resonator exhibits desired resonant characteristics in the band ofseveral hundreds of megahertz to several gigahertz when the base body610 has a dielectric constant of 2.6 to 40. It is also desired tominimize the material loss of a resonator and hence, setting adielectric dissipation factor (tan δ) in the range of 0.0025 to 0.0075is preferable. Then a choice may be made among the above-mentionedorganic dielectric layers or the above-mentioned first and secondcomposite dielectric layers.

Example 9-24

FIGS. 88 and 89 illustrate a strip resonator according to a furtherembodiment of the invention. FIG. 88 is a see-through perspective view,and FIG. 89 is a cross-sectional view.

In FIGS. 88 and 89, the strip resonator includes an intermediaterectangular strip conductor 784, upper and lower rectangular GNDconductors 783, and constituent layers 710 sandwiched therebetween. Tothe opposite ends of the strip conductor 784, a HOT terminal 781 and aGND terminal 782 for a resonator are formed and connected. The method offorming the remaining components is the same as in the inductor ofExample 9-1.

With respect to the material of the constituent layers 710 of theresonator, desired resonant characteristics are available in a band ofseveral hundreds of megahertz to several gigahertz when the dielectricconstant is in the range of 2.6 to 40. Since it is desired to minimizethe material loss of the resonator, a dielectric dissipation factor (tanδ) of 0.0025 to 0.0075 is preferred. Then a choice is preferably made ofthe above-mentioned organic dielectric layers or first or secondcomposite dielectric layers.

Example 9-25

FIG. 90 is a see-through perspective view of a resonator according to afurther embodiment of the invention.

Like Example 9-23, the resonator shown in FIG. 90 includes a base body810 and a pair of coaxial conductors 841, 842 in the form of throughholes formed in the base body. Formed on the base body 810 are a surfaceGND conductor 847, a coaxial conductor 842 connected to the surface GNDconductor 847 through an edge electrode 882, a coaxial conductor 841connected to the coaxial conductor 842 through a connecting electrode885, and a resonator HOT terminal 881 connected to the coaxial conductor841. The coaxial conductors 841 and 842 each are a coaxial line having aspecific impedance, and the surface GND conductor 847 is formed so as tosurround-them.

The resonator exhibits desired resonant characteristics in a band ofseveral hundreds of megahertz to several gigahertz when the material ofthe base body 810 has a dielectric constant in the range of 2.6 to 40.Since it is desired to minimize the material loss of the resonator, adielectric dissipation factor (tan δ) of 0.0025 to 0.0075 is preferred.Then a choice is preferably made of the above-mentioned organicdielectric layers or first or second composite dielectric layers.

Example 9-26

FIG. 91 is a see-through perspective view of a strip resonator accordingto a further embodiment of the invention.

Like Example 9-24, the strip resonator in FIG. 91 includes anintermediate U-shaped strip conductor 884, upper and lower rectangularGND conductors 883, and constituent layers 810 sandwiched therebetween.To the opposite ends of the strip conductor 884, a HOT terminal 881 anda GND terminal 882 for a resonator are formed and connected. The methodof forming the remaining components is the same as in the inductor ofExample 9-1.

The resonator exhibits desired resonant characteristics in a band ofseveral hundreds of megahertz to several gigahertz when the material ofthe constituent layers 810 has a dielectric constant in the range of 2.6to 40. Since it is desired to minimize the material loss of theresonator, a dielectric dissipation factor (tan δ) of 0.0025 to 0.0075is preferred. Then a choice is preferably made of the above-mentionedorganic dielectric layers or first or second composite dielectriclayers.

FIG. 92 is an equivalent circuit diagram of the resonators in theforegoing Examples 9-23 to 9-26. In the diagram, a HOT terminal 981 forthe resonator is connected to one end of a resonator 984, 941constructed by a coaxial path or strip line, and a GND terminal 982 isconnected to the other end thereof.

Example 9-27

FIG. 93 is a block diagram showing a high-frequency portion of aportable terminal equipment according to a further embodiment of theinvention.

In FIG. 93, a base band unit 1010 delivers a transmission signal to amixer 1001 where the signal is mixed with an RF signal from a hybridcircuit 1021. A voltage controlled oscillator (VCO) 1020 is connected tothe hybrid circuit 1021 to construct a synthesizer circuit with a phaselock loop circuit 1019 so that the hybrid circuit 1021 may deliver an RFsignal of a predetermined frequency.

The transmission signal which has been RF modulated by the mixer 1001 ispassed through a band-pass filter (BPF) 1002 and amplified by a poweramplifier 1003. An output of the power amplifier 1003 is partially takenout of a coupler 1004, adjusted to a predetermined level by anattenuator 1005, and fed back to the power amplifier 1003 for adjustingso that the power amplifier may have a constant gain. The coupler 1004delivers a transmission signal to a duplexer 1008 through an isolator1006 for precluding reverse current and a low-pass filter 1007. Thesignal is transmitted from an antenna 1009 connected to the duplexer1008.

An input signal received by the antenna 1009 is fed from the duplexer1008 to an amplifier 1011 and amplified to a predetermined level. Thereceived signal delivered from the amplifier 1011 is fed to a mixer 1013through a band-pass filter 1012. The mixer 1013 receives an RF signalfrom the hybrid circuit 1021 whereby the RF signal component is removedto effect demodulation. The received signal delivered from the mixer1013 is passed through a SAW filter 1014, amplified by an amplifier1015, and fed to a mixer 1016. The mixer 1016 also receives a localtransmission signal of a predetermined frequency from a localtransmitter circuit 1018. The received signal is converted to a desiredfrequency, amplified to a predetermined level by an amplifier 1017 andsent to the base band unit 1010.

According to the invention, an antenna front end module 1200 includingthe antenna 1009, duplexer 1008, and low-pass filter 1007, and anisolator power amplifier module 1100 including the isolator 1006,coupler 1004, attenuator 1005 and power amplifier 1003 can beconstructed as a hybrid module by the same procedure as above. Further,a unit including other components can be constructed as an RF unit asdemonstrated in Example 9-22. BPF, VCO, etc. can be constructed inaccordance with the procedures shown in Examples 9-9 to 9-12 and 9-19.

In addition to the above-exemplified electronic parts, the invention isalso applicable by a similar procedure to coil cores, toroidal cores,disk capacitors, lead-through capacitors, clamp filters, common modefilters, EMC filters, power supply filters, pulse transformers,deflection coils, choke coils, DC-DC converters, delay lines,electromagnetic wave absorbing sheets, thin-walled electromagnetic waveabsorbers, electromagnetic wave shields, diplexers, duplexers, antennaswitch modules, antenna front end modules, isolator/power amplifiermodules, PLL modules, front end modules, tuner units, directionalcouplers, double balanced mixers (DBM), power synthesizers, powerdistributors, toner sensors, current sensors, actuators, sounders(piezoelectric sound generators), microphones, receivers, buzzers, PTCthermistors, temperature fuses, ferrite magnets, etc.

In each of the foregoing Examples, any of flame retardants, for example,halides such as halogenated phosphates and brominated epoxy resins,organic compounds such as phosphate amides, and inorganic materials suchas antimony trioxide and aluminum hydride may be added to theconstituent layers.

BENEFITS OF THE INVENTION

In the first aspect of the invention, the consolidated compositedielectric material has a relatively high Q and relatively highdielectric constant, is used in an application where such properties arerequired, for example, such electronic parts as strip lines, impedancematching circuits, delay circuits, and antennas, and can be adapted soas to meet the required properties.

In the second aspect of the invention, the consolidated compositedielectric material has a high dielectric constant, is used in anapplication where such properties are required, for example, suchelectronic parts as capacitor-built-in circuit boards, hybrid parts andcapacitors, and can be adapted so as to meet the required properties.

In the third aspect of the invention, the composite dielectric substrateis suitable for use in the high-frequency region, exhibits dielectriccharacteristics for the intended purpose as typified by a highdielectric constant and a low dissipation factor in the high-frequencyregion. Also provided are a prepreg, coated copper foil and molded sheetfor use in preparing the composite dielectric substrate.

In the fourth aspect of the invention, there are provided (1) acomposite magnetic substrate and a prepreg having a low dielectricconstant and low dissipation factor; (2) a composite magnetic substrateand a prepreg having high heat resistance, typically a high glasstransition temperature and high decomposition initiation temperature;(3) a composite magnetic substrate and a prepreg having a low waterpickup and a minimized change of dielectric constant and dissipationfactor; (4) a composite magnetic substrate and a prepreg which haveclose adhesion to a metal foil such as copper foil and a reducedthickness, and can be manufactured by a conventional substratemanufacturing process; (5) a composite magnetic substrate and a prepreghaving a constant dielectric constant and dissipation factor up to afrequency band of the order of gigahertz; and (6) a composite magneticsubstrate and a prepreg having minimized temperature dependency ofdielectric constant and dissipation factor.

In the fifth aspect of the invention, the flame retardant substrate andprepreg have improved flame retardance, and good electricalcharacteristics at high frequencies for use in electronic parts andcircuit substrates.

In the sixth aspect of the invention, the thermosetting polyvinylbenzylether resin composition in the cured state exhibits dielectriccharacteristics which are satisfactory and constant over a widefrequency region and less dependent on temperature and moisture pickup,and maintains unchanged the physical properties of the polyvinylbenzylether compound featuring heat resistance. Using an addition type flameretardant to be post added, the composition can be made flame retardantwithout considerations on reaction conditions and cure stresses. Inaddition, the thermosetting polyvinylbenzyl ether resin composition hasimproved high-frequency dielectric characteristics in that the Q valueis increased, without increasing the dielectric constant, in ahigh-frequency region of 100 MHz to 10 GHz.

The method is provided in the seventh aspect of the invention forpreparing the thermosetting polyvinylbenzyl ether resin compositionwhich in the cured state exhibits dielectric characteristics which aresatisfactory and constant over a wide frequency region and lessdependent on temperature and moisture pickup, and maintains unchangedthe physical properties of the polyvinylbenzyl ether compound featuringheat resistance. In addition, the dielectric dissipation factor can besignificantly reduced (to give a high Q value), and the composition canbe used at a low loss in a high-frequency region of 100 MHz to 10 GHz.

In the eighth aspect of the invention, the thermosetting polyvinylbenzylether resin composition in the cured state exhibits dielectriccharacteristics which are satisfactory and constant over a widefrequency region and less dependent on temperature and moisture pickup.The composition yields a composite dielectric material which takesadvantage of the properties of dielectric powder and the polyvinylbenzylether compound featuring heat resistance, and when aged underhigh-temperature conditions or high-temperature, high-humidityconditions, experiences a minimized change of dielectric constant anddissipation factor (i.e., Q). The composite dielectric materialexperiences a minimized change of dielectric constant and dissipationfactor (i.e., Q) even under high-temperature conditions as encounteredduring reflow. Also provided is a thermosetting polyvinylbenzyl etherresin composition from which the composite dielectric material isobtained.

In the ninth aspect of the invention, using any one of resin substrateshaving improved high-frequency characteristics, magnetic substrateshaving improved high-frequency characteristics, and dielectricsubstrates having improved high-frequency characteristics, there areprovided high-frequency electronic parts having improved high-frequencycharacteristics and hence, improved overall electrical characteristics.

Japanese Patent Application Nos. 11-373804, 11-373805, 11-373806,11-373353, 11-375732, 2000-68364, 2000-68366, 2000-121629, 2000-147591,and 11-375753 are incorporated herein by reference.

Although some preferred embodiments have been described, manymodifications and variations may be made thereto in light of the aboveteachings. It is therefore to be understood that the invention may bepracticed otherwise than as specifically described without departingfrom the scope of the appended claims.

1-86. (canceled)
 87. A composite dielectric material, comprising a resinand a ceramic powder dispersed therein, and wherein said resin resultsfrom a polyvinylbenzyl ether compound, the content of the ceramic powderis from 10 vol % to less than 70 vol %, based on the ceramic powder andthe polyvinylbenzyl ether compound combined, and said compositedielectric material has a Q of at least 250 and a dielectric constant ofat least 3 at a frequency of at least 500 MHz.
 88. The compositedielectric material of claim 87, prepared by curing a mixture comprisingthe polyvinylbenzyl ether compound and the ceramic powder.
 89. Thecomposite dielectric material of claim 87, wherein the polyvinylbenzylether compound has the following formula (1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 90. The composite dielectric material ofclaim 87, wherein the ceramic powder to be dispersed, has a Q of 250 to50,000 and a dielectric constant of 2.5 to 300 at a frequency of 1 to 15GHz.
 91. The composite dielectric material of claim 87, wherein theceramic powder is at least one ceramic, based on a composition selectedfrom the group consisting of TiO₂, CaTiO₃, SrTiO₃, BaO—Nd₂O₃—TiO₂,Bi₂O₃—BaO—Nd₂O₃—TiO₂, BaTi₄O₉, Ba₂Ti₉O₂₀, Ba₂(Ti,Sn)₉O₂₀, MgO—TiO₂,ZnO—TiO₂, MgO—SiO₂, and Al₂O₃ base compositions.
 92. A compositedielectric material, comprising a resin and a ceramic powder dispersedtherein, and wherein said resin results from a polyvinylbenzyl ethercompound, said ceramic powder is at least one ceramic, based on acomposition selected from the group consisting of BaTiO₃, (Ba,Pb)TiO₃,Ba(Ti,Zr)O₃, and (Ba,Sr)TiO₃ base compositions, the content of theceramic powder is from 30 vol % to less than 70 vol %, based on theceramic powder and the polyvinylbenzyl ether compound combined, and saidcomposite dielectric material has a dielectric constant of at least 10in a high-frequency band of at least 10 MHz.
 93. The compositedielectric material of claim 92, prepared by curing a mixture comprisingthe polyvinylbenzyl ether compound and the ceramic powder.
 94. Thecomposite dielectric material of claim 92, wherein the polyvinylbenzylether compound has the following formula (1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 95. The composite dielectric material ofclaim 92, wherein the ceramic powder to be dispersed, has a dielectricconstant of 90 to 100,000 at a frequency of 100 kHz to 10 MHz.
 96. Acomposite dielectric substrate, comprising a resin and a dielectricceramic powder dispersed therein, and wherein said resin results from apolyvinylbenzyl ether compound, the content of the dielectric ceramicpowder is from 10 to 65 vol %, based on the dielectric ceramic powderand the polyvinylbenzyl ether compound combined, and said compositedielectric substrate is used in a high-frequency region of at least 100MHz.
 97. The composite dielectric substrate of claim 96, prepared bymolding and curing a mixture comprising the polyvinylbenzyl ethercompound and the ceramic powder.
 98. The composite dielectric substrateof claim 96, wherein the polyvinylbenzyl ether compound has thefollowing formula (1):

wherein R³ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl of from 60:40 to0:100, and n is a number of 2 to
 4. 99. The composite dielectricsubstrate of claim 96, wherein the dielectric ceramic powder has a meanparticle size of 0.5 to 100 μm.
 100. A composite dielectric substrate,prepared by dispersing a polyvinylbenzyl ether compound and a dielectricceramic powder in a solvent to form a slurry, followed by drying andcompression, and wherein the content of the dielectric ceramic powder isfrom 10 to 65 vol %, based on the dielectric ceramic powder and thepolyvinylbenzyl ether compound combined, and wherein the compositedielectric substrate is used in a high-frequency region of at least 100MHz.
 101. The substrate of claim 100, wherein the polyvinylbenzyl ethercompound has the following formula (1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 102. The substrate of claim 100, whereinthe dielectric ceramic powder has a mean particle size of 0.5 to 100 μm.103. The composite dielectric substrate of claim 100, wherein the driedslurry is molded into a molded sheet.
 104. A composite magneticsubstrate, comprising a magnetic powder dispersed in a polyvinylbenzylether compound.
 105. The composite magnetic substrate of claim 104,wherein the polyvinylbenzyl ether compound has the following formula(1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 106. The composite magnetic substrate ofclaim 104, wherein the magnetic powder is of a ferromagnetic metal orferrite.
 107. The composite magnetic substrate of claim 104, wherein themagnetic powder has a mean particle size of 0.01 to 100 μm.
 108. Thecomposite magnetic substrate of claim 104, wherein the content of themagnetic powder is 50 to 90 wt %, based on the magnetic powder and thepolyvinylbenzyl ether compound combined.
 109. A prepreg, prepared bymixing a polyvinylbenzyl ether compound and a magnetic powder, at atemperature not lower than the melting point of the polyvinylbenzylether compound, and molding the resulting solid mixture under pressure.110. A flame retardant substrate, comprising a polyvinylbenzyl ethercompound and a flame retardant dispersed therein.
 111. The flameretardant substrate of claim 110, wherein the polyvinylbenzyl ethercompound has the following formula (1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 112. The flame retardant substrate of claim110, wherein said flame retardant is a halogenated phosphate.
 113. Theflame retardant substrate of claim 110, wherein the content of the flameretardant is 40 to 60 wt %, based on the flame retardant and thepolyvinylbenzyl ether compound combined.
 114. A flame retardantpolyvinylbenzyl ether resin composition, comprising a polyvinylbenzylether compound and an additive type flame retardant or a mixture of anadditive type flame retardant and a flame retardant adjuvant.
 115. Thecomposition of claim 114, wherein the additive type flame retardant is abrominated aromatic flame retardant, which is present in an amount of 5to 70% by weight, based on the polyvinylbenzyl ether compound.
 116. Thecomposition of claim 114, wherein the composition comprises the mixtureof an additive type flame retardant and a flame retardant adjuvant, andwherein the flame retardant adjuvant is an inorganic flame retardant,and a mixture of a brominated aromatic flame retardant and the inorganicflame retardant is present in an amount of 5 to 70% by weight, based onthe polyvinylbenzyl ether compound.
 117. The composition of claim 114,wherein the polyvinylbenzyl ether compound has the following formula(1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 118. The composition of claim 114, whereinthe composition comprises a mixture of an additive type flame retardantand a flame retardant adjuvant, and wherein the flame retardant adjuvantis an inorganic flame retardant which has been surface treated with acoupling agent.
 119. A thermosetting polyvinylbenzyl ether resincomposition, comprising a polyvinylbenzyl ether compound and adielectric powder, which has been surface treated with a coupling agent.120. The composition of claim 119, wherein the coupling agent is analkoxysilane or organic functional silane having a pyrolysis initiationtemperature of at least 250° C.
 121. The composition of claim 119,wherein the polyvinylbenzyl ether compound has the following formula(1):

wherein R¹ denotes methyl or ethyl, R² denotes hydrogen or a hydrocarbongroup of 1 to 10 carbon atoms, R³ denotes hydrogen or a vinylbenzylgroup in a molar ratio of hydrogen to vinylbenzyl from 60:40 to 0:100,and n is a number of 2 to
 4. 122. The composition of claim 119, whereinthe dielectric powder has been surface treated with 0.1 to 6% by weightof the coupling agent, based on the weight of the dielectric powder.123. The composition of claim 119, further comprising a flame retardant.124. A composite dielectric material, obtained by curing the compositionof claim 119, and wherein the dielectric powder is dispersed in theresin resulting from the polyvinylbenzyl ether compound.
 125. Acomposite dielectric material, obtained by curing the composition ofclaim 123, and wherein the dielectric powder is dispersed in the resinresulting from the polyvinylbenzyl ether compound, and the compositedielectric material is flame retarded.